正电子寿命-动量关联技术

评述了国际正电子领域的新探测技术———寿命 动量关联技术.介绍了该技术的发展过程,讨论了该技术的分析方法,详细阐述了该技术在Ps形成和热化过程中的应用,并讨论了该技术在Ps化学上的应用.A new detection technique--age momentum correlation in international positron field is reviewed. The recent development is described and the analysis methods are discussed for the technique. The application of the technique in the positronium formation and thermalization processes are systematically summarized. Besides the application of the technique in Ps chemistry is discussed.     

Al/GaSb异质结的慢正电子研究

用单能慢正电子束和 X 射线衍射方法研究了 Al/n-GaSb 金属半导体异质结在不同温度退火的情况下的演变.采用三层模型既 Al/界面/GaSb 对 S-E 实验数据进行拟合.结果发现在未退火样品的 Al 和 GaSb 之间存在一个厚度大约5nm 的界面层.在经过400℃退火后,该界面厚度增加到约400nm,且 S 参数下降.这可能是由于在退火过程中,界面区域的原子在界面处相互扩散所引起的.Al 膜的 S_(Al)参数降低且效扩散长度 L_(Al)增加,说明 Al 膜内的空位缺陷经过退火被消除且进行结构重整,晶格结构不断变好的结果.衬底 GaSb 的 S_B 参数和有效扩散长度 L_B 的演变表明,经过250℃退火后,原有的正电子捕获中心消失：但是经进一步400℃退火,又产生了新的正电子捕获中心.这可能来源于其他类型的与 V_(Ga)相关缺陷的正电子捕获以及 Ga_(Sb)晶格反位引起的正电子浅捕获.X 射线衔射的测量结果证实了正电子方法的结论.     

A new positron annihilation lifetime spectrometer based on DRS4 waveform digitizing board

Abstract： A new simple digital positron lifetime spectrometer has been developed. It includes a DRS4 waveform digitizing board and two scintillation detectors based on the XP2020Q photomultiplier tubes and LaBr3 scintillators. The DRS4 waveform digitizing can handle small pulses, down to few tens of millivolts, and its time scale linearity and stability are very good. The new system has reached a 206 ps time resolution, which is better than the conventional analog apparatus using the same detectors. These improvements make this spectrometer more simple and convenient in comparison with other spectrometers, and it can be applied to the other scintillation timing measurements with picosecond accuracy.     

金刚石膜微结构的慢正电子束测量研究

The microstructure of diamond films was studied by slow positron beam and Raman spectroscopy. For the Raman spectroscopy experiment on diamond films, a high fraction of the sp3 hybridized bond was detected in samples. Positron annihilation spectra analysis further illuminated that the concentration and types of defects were different in each sample. S-E curves of all samples showed that diamond crystal structures had obvious variation in each sample. These results indicated that positron annihilation spectroscopy was an effective means to measure microstructure of diamond films.