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51.
在苯(C6H6)和四氟化碳(CF4)混合气体中,用微波电子回旋共振等离子体化学气相沉积技术(ECRCVD)在不同功率下制备了氟化非晶碳膜(aC:F),为了检测膜的热稳定性对其进行了真空退火处理,测量了退火前后膜厚的变化率,并用傅里叶变换红外吸收光谱(FTIR)研究了其结构的变化.结果表明,膜厚变化率与沉积功率有关;400℃退火后低功率下沉积的膜的结构变化显著,高功率下沉积的膜则呈现了较好的热稳定性.
关键词:
ECR-CVD
aC:F薄膜
真空退火 相似文献
52.
研究了CHF3C6H6沉积的氟化非晶碳(αC∶F)薄膜的光学带隙.发现αC∶F薄膜光学带隙的大小取决于薄膜中C—F,CC的相对含量.这是由于CC形成的窄带隙π键和C—F形成的宽带隙σ键含量的相对变化,改变了带边态密度分布的结果.在微波功率为140—700W、沉积气压为01—10Pa、源气体CHF3∶C6H6流量比为1∶1—10∶1条件下沉积的αC∶F薄膜,光学带隙在176—398eV之间
关键词:
氟化非晶碳(αC∶F)薄膜
光学带隙
键结构 相似文献
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用紫外可见光透射光谱(UV-VIS)并结合键结构的X射线光电子能谱(XPS)和红外谱(FTIR)分析,研究了电子回旋共振等离子体增强化学气相沉积法制备的氟化非晶碳薄膜的光吸收和光学带隙性质.在微波功率为140—700W、源气体CHF3∶C6H6比例为1∶1—10∶1条件下沉积的薄膜,光学带隙在1.76—2.85eV之间.薄膜中氟的引入对吸收边和光学带隙产生较大的影响,吸收边随氟含量的提高而增大,光学带隙则主要取决于CF键的含量,是由于强电负
关键词:
氟化非晶碳薄膜
光吸收与光学带隙
电子回旋共振等离子体 相似文献
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为了提高时间间隔测量系统的性能,增加系统的测量通道,设计研制了多通道精密时间间隔测量系统。测量系统采用虚拟仪器技术,硬件接口采用PXI总线,利用PLX9054专用芯片实现PXI总线的接口功能。采用WinDriver开发驱动程序,在VB平台下开发时间间隔应用程序,实现了数据的采集、实时显示和保存。简论了接口电路和软件设计,并对软件编程的一些关键技术作了介绍。 相似文献
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采用功率IGBT串联组合模块作为放电开关,设计了16级Marx结构的脉冲电源,能够产生可调高压方波脉冲。由9支耐压3 kV的IGBT串联组成最大工作电压12.5 kV的串联组合模块;通过磁隔离触发方式控制各级IGBT的同步导通和关断。输出电压从几kV至200 kV可调、输出脉宽随外部触发信号宽度在1.5~10 s范围内可调、前沿小于500 ns、后沿小于2.3 s;在输出电压大于100 kV、输出电流20 A时顶降小于2%。 相似文献
59.
Initial growth and microstructure feature of Ag films prepared by very-high-frequency magnetron sputtering
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The initial growth and microstructure feature of Ag films formation were investigated, which were prepared by using the very-high-frequency(VHF)(60 MHz) magnetron sputtering. Because of the moderate energy and very low flux density of ions impinging on the substrate, the evolutions of initial growth for Ag films formation were well controlled by varying the sputtering power. It was found that the initial growth of Ag films followed the island(Volmer—Weber, VW) growth mode, but before the island nucleation, the adsorption of Ag nanoparticles and the formation of Ag clusters dominated the growth. Therefore, the whole initial stages of Ag films formation included the adsorption of nanoparticles, the formation of clusters, the nucleation by the nanoparticles and clusters simultaneously, the islands formation, and the coalescence of islands. 相似文献
60.
Effect of driving frequency on the structure of silicon grown on Ag(111) films by very-high-frequency magnetron sputtering
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The effect of driving frequency on the structure of silicon grown on Ag(111) film is investigated, which was prepared by using the very-high-frequency(VHF)(40.68 MHz and 60 MHz) magnetron sputtering. The energy and flux density of the ions impinging on the substrate are also analyzed. It is found that for the 60-MHz VHF magnetron sputtering, the surface of silicon on Ag(111) film exhibits a small cone structure, similar to that of Ag(111) film substrate, indicating a better microstructure continuity. However, for the 40.68-MHz VHF magnetron sputtering, the surface of silicon on Ag(111) film shows a hybrid structure of hollowed-cones and hollowed-particles, which is completely different from that of Ag(111)film. The change of silicon structure is closely related to the differences in the ion energy and flux density controlled by the driving frequency of sputtering. 相似文献