Manakov型非线性Schrdinger方程的Jacobi椭圆函数包络解

简化了扩展的Jacobi椭圆函数展开法 ,亦即对修正的Jacobi椭圆函数展开法进行了扩展 .把这种方法应用于Manakov型非线性Schr dinger方程 ,得到了Jacobi椭圆函数包络解 .在一定条件下 ,这些解退化成相应的包络冲击波解和包络孤立波解 .     

Modified Spontaneous Emission from Dye Molecules inside a Photonic Crystal Microcavity

We fabricate a photonic crystal microcavity containing Alq3 in a sandwiched structure by the self-assemble method. The angle-dependent photoluminescence （PL） spectra and the variation of the PL lifetime demonstrate the effect of the photonic band gap on the spontaneous emission of Alq3 in the photonic crystals.     

室内人体隐匿物被动太赫兹成像研究进展

太赫兹波由于其极低的光子能量和对非极性物质较强的穿透特性已成为人体隐匿物检测应用的热点。本文以室内人体隐匿物品探测为主要应用背景,简要介绍了太赫兹波段的大气传播特性;重点分析了基于辐射检测的室内被动太赫兹成像原理和系统的关键技术,包括辐射计和阵列扫描方式等;回顾了国内外被动太赫兹成像技术在人体安检领域的研究现状。综合考虑系统成本和成像时间,一定数量的高灵敏度辐射计加上扫描机构成像的方式在未来很长一段时间里将是被动太赫兹成像系统的主流方式。     

α-单取代吡啶盐的新方法合成及光化学反应研究

以α位单取代2,4,5-三苯基吡喃盐和取代伯胺为原料,一步合成出相应的α位单取代吡啶盐.在此基础上研究了α位单取代吡啶盐的光化学反应,成功合成出具有较高共平面结构的菲啶盐.通过测定吡啶盐和菲啶盐的荧光光谱发现,N位苯环上取代基供电性的增强使得吡啶盐荧光发射光谱发生明显的红移,荧光强度减弱,而菲啶盐由于分子共平面性增强极大提高了分子的荧光强度.     

N－(5－四唑基)－N＇－芳氧乙酰基脲的合成及生物活性

细胞分裂素;N－(5－四唑基)－N＇－芳氧乙酰基脲的合成及生物活性     

碳纳米管负载氢氧化镍修饰电极的制备及应用

采用表面滴涂结合循环伏安法制备了碳纳米管负载氢氧化镍修饰电极(Ni(OH)2/MWNT/CCE)。研究了该修饰电极对葡萄糖的电催化氧化性能。结果表明,该修饰电极对葡萄糖具有良好的电催化氧化活性。在优化条件下,安培法检测葡萄糖的线性范围为2.0×10-7～5.7×10-4 mol.L-1(r=0.999 9,s=2 786.5μA.(mmol.L-1)-1.cm-2)和5.7×10-4～2.7×10-3 mol.L-1(r=0.999 1,s=2 005.2μA.(mmol.L-1)-1.cm-2),检出限(3sb)为8.0×10-8 mol.L-1。该法已成功用于血清中葡萄糖含量的测定。     

Using optical tweezers to investigate the specific single-interaction between apoA-I molecule and ABCA1 on living cells

We carry out in situ single-molecule measurements of the specific interaction between apolipoprotein A-I （apoA-I） and ATP binding cassette transporter A1 （ABCA1） on THP-1 cells. Single-molecule force spectroscopy shows that similar to normal apoA-I, the dysfunctional apoA-I from diabetes patients interacts with ABCA1 via two different binding sites on the cells. The strength of dysfunctional apoA-I binding to a high-capacity binding site is 26.5±4.9 pN. The minor direct apoA-I/ABCA1 binding strength is 56.7±4.1 pN. These results facilitate a pathological understanding of the mechanisms that underlie the specific interaction of aDoA-I and ABCA1 at the single-molecule level.     

The determination of the thickness and the optical dispersion property of gold film using spectroscopy of a surface plasmon in the frequency domain

We propose to use wavelength modulation approach,i.e.,the spectroscopy of a surface plasmon in the frequency domain,to characterize the optical dispersion property of gold film.Using this method,we determine the dispersion relationship of gold film in a wavelength range from 537.12 nm to 905.52 nm,and our results accord well with the reported results by other authors.This method is particularly suited for studying the optical dispersion properties of thin metal films,because a series of dielectric constants over a wide spectral range can be determined simultaneously via only a single scan of the incident angle,thereby avoiding the repeated measurements required when using the angular modulation approach.     

介电力显微术：一种观察纳米材料中电荷行为的新方法

功能纳米器件中组成材料间的电荷转移输运过程对于器件中的物理化学过程以及由此引发的器件功能会有重大影响,因此,深入理解器件工作过程中的电子／离子行为机理对于优化器件功能以及进一步开发纳米材料的应用潜力具有重要意义．传统场效应晶体管对于纳米材料的电输运测量表征反映了载流子在整个器件中的统计行为,但难以检测电荷具体的转移输运过程．同时,由于纳米材料的尺寸和分散性,基于纳米材料的场效应晶体管面临着制备困难、电极／纳米材料接触复杂和制作成本高等问题．因此,本课题组发展了介电力显微术（dielectricforcemicroscopy,DFM）方法并实现了对纳米材料电学性质的无接触、高空间分辨率和快速表征．本文介绍了介电力显微术的基本原理,列举了其在探究一维纳米材料、纳米颗粒以及有机半导体薄膜电学性质上的一些应用实例．这些实例验证了介电力显微术对纳米材料电学性质的表征能力,并展现了这一技术在纳米材料物理化学性质和纳米器件功能研究上的广阔前景．     

Energetics of He and H Atoms in W–Ta Alloys: First-Principle Calculations

Properties of various defects of He and H atoms in W-Ta alloys are investigated based on density functional theory. The tetrahedral interstitial site is the most configured site for self-interstitial He and H in W and W-Ta alloys. Only a single He atom favors a substitutional site in the presence of a nearby vacancy. However, in the coexistence of He and H atoms in the presence of the vacancy, the single H atom favors the tetrahedral interstitial site(TIS) closest to the vacancy, and the He atom takes the vacancy center. The addition of Ta can reduce the formation energy of TIS He or H defects. The substituted Ta affects the charge density distribution in the vicinity of the He atom and decreases the valence electron density of the H atoms. A strong hybridization of the H s states and the nearest W d state s exists in W_(53)He_1 H_1 structure. The sequence of the He p projected DOS at the Fermi energy level is in agreement with the order of the formation energy of the He-H pair in the systems.