排序方式: 共有111条查询结果,搜索用时 15 毫秒
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描述了合肥同步辐射光源二期工程中,电子储存环升级的闭轨测量系统及其在设备研制中的应用。介绍了性能稳定可靠的Bergoz束流位置监测电子学信号处理器。升级后的闭轨测量系统中处理电子学电路的束流位置分辨率可达1μm,系统误差小于10μm。整个测试系统的分辨率小于3μm。利用该高精度闭轨测量系统和基于束流准直系统完成了束流准直四极铁磁中心的测量,并和控制系统完成了储存环全环闭轨反馈校正试验。一个完整的束流位置监测系统已投入了在线运行,保障了为用户提供高稳定高品质的光源。 相似文献
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根据同步光与储存环中的束流信号具有相同的时间结构的原理,测量同步光脉冲的半高全宽值可以计算出束团的长度。根据合肥光源的特点和实际需要,选择快速光电接收器搭配高速高带宽示波器作为在线测量束团长度和纵向分布等的主要手段。对单束团模式下束团长度随流强和高频腔腔压的变化趋势进行了测量。测量结果表明:束团长度与腔压的0.3次方成反比,比理论值0.5小;而束团长度随流强的增长率为2.0 ps/mA。通过测量纵向量子寿命进行了能散随流强变化的间接测量,结果表明,束团的拉伸是能散变化和势阱效应共同作用的结果。 相似文献
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束流位置监测器(BPM)和与其相邻的四极铁之间的电偏移对于电子储存环轨道校正十分重 要。改变四极铁的强度,并通过测量轨道变化就能够计算出该四极铁的磁中心相对于相邻的BPM的电中心 之间的偏差。基于NSRL储存环的BBA硬件系统和EPICS控制系统,采用Labview平台开发出了BBA测量 的软件控制程序。由计算机控制四极铁的强度,连续测量后拟合得到四极铁的磁中心与相邻BPM的相对偏 差,测量精度可以达到100μm。 相似文献
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Investigation of impurity transport using supersonic molecular beam injected neon in HL-2A ECRH plasma 下载免费PDF全文
In this paper, we describe the behavior of impurity transport in the HL-2A electron cyclotron resonance heating (ECRH) L-mode plasma. The neon as a trace impurity is injected by the supersonic molecular beam injection (SMBI) technique, which is used for the first time to study the impurity transport in HL-2A. The progression of neon ions is monitored by the soft X-ray camera and bolometer arrays with good temporal and spatial resolutions. The convection and diffusion process of the neon ions are investigated with the one-dimensional impurity transport code STRAHL. The results show that the diffusion coefficient D of neon ions is a factor of four larger than the neoclassical value in the central region. The value of D is larger in the outer region of the plasma (ρ 〉 0.6) than in the central region of the plasma (ρ 〈 0.6). The convective velocity directs inwards with a value of ~-1.0 m/s in the Ohmic discharge, but it reverses to direct outwards with a value of ~ 8.0 m/s in the outer region of the plasma when ECRH is applied. The result indicates that the impurity transport is strongly enhanced with ECRH. 相似文献
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Effect of InxGal-xN "continuously graded" buffer layer on InGaN epilayer grown by metalorganic chemical vapor deposition 下载免费PDF全文
In this paper we report on the effect of an lnxGal xN continuously graded buffer layer on an InGaN epilayer grown on a GaN template. In our experiment, three types of buffer layers including constant composition, continuously graded composition, and the combination of constant and continuously graded composition are used. Surface morphologies, crystalline quality, indium incorporations, and relaxation degrees of InGaN epilayers with different buffer layers are investigated. It is found that the InxGa1-xN continuously graded buffer layer is effective to improve the surface morphology, crystalline quality, and the indium incorporation of the InGaN epilayer. These superior characteristics of the continuously graded buffer layer can be attributed to the sufficient strain release and the reduction of dislocations. 相似文献