Leakage current reduction by thermal oxidation in Ni/Au Schottky contacts on lattice-matched In0.18Al0.82N/GaN heterostructures

By using temperature-dependent current–voltage, variable-frequency capacitance–voltage, and Hall measurements,the effects of the thermal oxidation on the electrical properties of Ni/Au Schottky contacts on lattice-matched In0.18Al0.82N/GaN heterostructures are investigated. Decrease of the reverse leakage current down to six orders of magnitude is observed after the thermal oxidation of the In0.18Al0.82N/GaN heterostructures at 700oC. It is confirmed that the reverse leakage current is dominated by the Frenkel–Poole emission, and the main origin of the leakage current is the emission of electrons from a trap state near the metal/semiconductor interface into a continuum of electronic states associated with the conductive dislocations in the InxAl1-xN barrier. It is believed that the thermal oxidation results in the formation of a thin oxide layer on the InxAl1-xN surface, which increases the electron emission barrier height.     

Investigation of chlorine-based etchants in wet and dry etching technology for an InP planar Gunn diode

Mesa etching technology is considerably important in the Gunn diode fabrication process. In this paper we fabricate InP Gunn diodes with two different kinds of chlorine-based etchants for the mesa etching for comparative study. We use two chlorine-based etchants, one is HCl-based solution (HCl/H 3 PO 4 ), and the other is Cl 2 -based gas mixture by utilizing inductively coupled plasma system (ICP). The results show that the wet etching (HCl-based) offers low cost and approximately vertical sidewall, whilst ICP system (Cl 2 -based) offers an excellent and uniform vertical sidewall, and the over-etching is tiny on the top and the bottom of mesa. And the fabricated mesas of Gunn diodes have average etching rates of ～ 0.6 μm/min and ～ 1.2 μm/min, respectively. The measured data show that the current of Gunn diode by wet etching is lower than that by ICP, and the former has a higher threshold voltage. It provides a low-cost and reliable method which is potentially applied to the fabrication of chip terahertz sources.     

聚合物电解质中增塑剂的研究进展

聚合物电解质在锂离子电池中有很好的应用前景,已成为当前锂离子电池研究领域的热点之一.但由于其室温电导率低,在实际应用中受到诸多限制.通常采用在聚合物电解质中添加适当比例的增塑剂以提高其离子电导率的方法来弥补此缺陷.本文综述了聚合物电解质中增塑剂的增塑原理、增塑剂的种类以及电解质中新型增埋剂的研究状况.     

New Discrete Element Models for Three-Dimensional Impact Problems

Two 3-D numerical models of the discrete element method （DEM） for impact problems are proposed. The models can calculate not only the impact problems of continuum and non-continuum, but also the transient process from continuum to non-continuum. The stress wave propagation in a concrete block and a dynamic splitting process of a marble disc under impact loading are numerically simulated with the proposed models. By comparing the numerical results with the corresponding results obtained by the finite element method （FEM） and the experiments, it is proved that the models are reliable for three-dimensional impact problems.     

基于改进后DGM(1,1)的模型区域科技人才聚集关键影响因素预测研究

为解决对区域科技人才聚集关键影响因素的预测问题,在传统DGM(1,1)模型的基础上,提出一种基于算子改进的DGM(1,1)模型应用于区域人才关键因素预测.首先,通过对反正切函数算子利用分数阶累加的方法进行改进,以达到提升算子处理数据精度且弥补算子缺陷的效果;其次,通过改进后算子与DGM(1,1)模型的结合来达到优化传统模型的目的;最后,通过收集陕西省西安市科技人才聚集关键影响因素进行应用分析并验证该模型的可行性和有效性.结果表明,改进后的DGM(1,1)模型具有较高的模型精度和较好的预测效果.     

硫化物半导体超微粒量子尺寸效应的光谱研究

用胶体化学方法在水溶液中制备了纳米硫尺寸硫化物半导体超微粒(CdS、ZnS、PbS、及Bi₂S₃),并用TEM测得超微粒颗粒尺寸小于10nm.本文详细研究了这些硫化物半导体超微粒的量子尺寸效应和光学性质以及制备过程中颗粒形成的化学环境与条件参数的影响。可以观察到它们收光谱及喇曼光谱(CdS)的明显变化。采用合适的表面修饰剂和稳定剂、将溶液的pH控制在适当的范围以及金属离子的过量等,都可使超微粒的吸收光谱明显蓝移并出现结构峰。对于CdS超微粒,其特征共振喇曼峰逐渐减弱直至最后消失。这些都表明了硫化物半导体超微粒尺寸逐渐减小而呈现出明显的量子尺寸效应。     

贝塞尔光束在生物医学显微成像技术中的应用（特邀）

作为一种典型的无衍射光束,贝塞尔光束具有无衍射和自重构特性,能够提供更长的聚焦长度和一定程度的抗散射能力,在生物医学光学显微成像技术领域获得了越来越多的应用。本文重点关注了贝塞尔光束在生物医学光学显微成像技术中的应用,包括利用其扩展景深能力实现体积样本快速三维成像、利用其抗散射粒子干扰能力实现散射样本的大深度成像以及利用更细聚焦光束能力实现更高分辨率的光学显微成像。首先,概述了贝塞尔光束及其实验室常用的产生方法;然后,总结了近些年贝塞尔光束在生物医学光学显微成像技术中的应用,包括但不限于多光子荧光显微成像、光片荧光显微成像、拉曼显微成像等,既总结了贝塞尔光束在其中发挥的优势,也分析了贝塞尔光束旁瓣带来的干扰问题的消除方案。最后分析和探讨了贝塞尔光束在生物医学光学显微成像技术应用中遇到的问题以及发展前景。     

纤维蛋白在聚(2-甲基-2-噁唑啉)/聚丙烯酸混合聚合物刷上的吸附-脱附行为

以聚多巴胺(PDA)为黏结剂,在硅、玻璃和金的表面制备了由具有抗蛋白质吸附功能的聚(2-甲基-2-噁唑啉)(PMOXA)和具有刺激响应性的聚丙烯酸(PAA)组成的混合聚合物刷.通过X-射线光电子能谱(XPS)、可变角光谱椭偏仪(VASE)对其进行了表征,并利用水接触角(WCA)研究了聚合物刷表面的亲/疏水性.选取pH?...     

Sb掺杂K0.5Na0.5NbO3无铅压电陶瓷相结构和电学性能的研究

采用传统固相烧结法,在1060 ℃制备(K0.5Na0.5)Nb1-xSbxO3(KNNS,x=0、0.01、0.02、0.03和0.04)无铅压电陶瓷,研究了Sb掺杂对KNN陶瓷物相结构、微观形貌和电学性能的影响.研究结果表明:Sb可以取代钙钛矿结构中B位的Nb位置,Sb取代Nb的最大量为0.03≤x≤0.04,当x=0.04时产生杂相;通过XRD图谱分析表明,x=0时陶瓷为单一的正交相结构,0.02≤x≤0.03时为正交-四方相共存,x=0.04时转变为三方相结构.Sb的掺杂具有细化晶粒的作用,随着Sb含量的增加,晶粒平均尺寸减小,晶粒大小变得均匀,介电性能增强.     

基于深度学习的超高速碰撞碎片云生成模型

数据驱动的模型已经被广泛研究,并成功应用到了计算力学。基于深度学习技术,提出一种新的采用数据驱动的碎片云生成模型。此模型可以学习SPH数值模拟结果,然后在多种控制条件下快速生成碎片云。在模型训练前的数据预处理阶段,对SPH模拟结果进行空间网格划分和质量聚合,实现了改善数据分布规律、加速模型训练和提升模型泛化性的目的。以高速靶球撞击薄壁圆筒后的碎片云质量分布为例,模拟并测试了多种控制条件下深度学习模型计算结果的正确性和稳定性,以及计算速度的高效性。实验证明,深度学习模型可以从训练集学习碎片云的物理规律,然后在训练集控制参数范围内进行良好的推理及插值;并且可以在训练数据集控制参数范围外,进行小范围推理预测;同时深度学习模型的计算速度远快于SPH方法。通过深度学习方法建立碎片云模型,可能是一种在空间飞行器防护结构原型设计阶段,实现碎片云实时生成的潜在方案。