Design and preparation of frequency doubling antireflection coating with different thicknesses of interlayer for LiB3O5 crystal

Design and preparation of frequency doubling antireflection coating with different thicknesses of interlayer were investigated for LiB3O5 (LBO) substrate. The design was based on the vector method. The thickness of the inserted SiO2 interlayer could be changed in a wide range for the four-layer design with two zeros at 1064 and 532 nm. The coatings without any interlayer and with 0.1 quarter-wave (λ/4), 0.3λ/4, 0.5λ/4 SiO2 interlayer were deposited respectively on LBO by using electron beam evaporation technique. All the prepared coatings with SiO2 interlayer indicated satisfying optical behavior. This expanded our option for the thickness of an interlayer when coating on LBO substrate. The prepared films with SiO2 interlayer showed better adhesion than that without any interlayer. The thickness of the interlayer affected the adhesion, the adhesion for the coating with 0.5λ/4 SiO2 interlayer was not as good as the other two.     

短波长软X射线多层膜高级次峰设计与制备

考虑了短波长软X射线多层膜的设计问题，比较了一、二、三级布喇格衍射峰设计的反射率结果，分析了反射率与周期厚度及金属层在周期中的比率的关系．本文认为，在存在不连续金属膜层的情况下，用布喇格衍射峰的二级次设计，有助于获得实测的反射率．给出了利用磁控溅射方法沉积的Mo/Si多层膜在4.47nm处同步辐射测量，在60°入射角下获得8.5%实测反射率的结果． 关键词：     

溅射过程中粒子能量对钛薄膜表面形貌影响

借助于原子力显微镜研究了离子束溅射沉积工艺中入射离子能量对制备的Ti薄膜表面形貌的影响。对薄膜表面高度数据进行相关运算，发现在此工艺条件下制备的薄膜具有典型的分形特征，利用分形表面高度—高度相关函数的唯象表达形式对不同能量下制备Ti薄膜表面的高度相关函数进行拟合。得到了薄膜表面的分形维数、水平相关长度、标准偏差粗糙度等参量。研究发现，入射Ar离子能量在300—700eV之间薄膜表面的粗糙度随着沉积粒子的能量增加而增大，分形维数随着入射离子能量的增加而减少。另外，在得到的分形维数基础上对不同溅射电压下Ti薄膜的生长机制进行了初步研究。     

一种用于Yb:YAG激光器的波长分离膜的研制

以1 030 nm高反,940,980 nm高透的波长分离膜作为实例,为提高该薄膜元件的波长分离效果,从膜系的优化方面做了一系列的研究,诸如采用带通滤光片的设计思想,在膜堆两侧加入了匹配层,调整膜堆的周期厚度,并用膜系设计软件对通带作进一步的优化.通过这一系列的优化设计后,利用RF双离子束溅射工艺在BK7玻璃基底上沉积样品薄膜,并在基底背面加镀通带增透膜.结果显示,透射带在940和980 nm处的透过率分别为97.73%和93.63%,反射带在1 030 nm的反射率为99.99%.对所制备的样品薄膜进行了激光损伤阈值测量,得到了35 J/cm2(1 064 nm,12 ns)的结果.     

Wideband film polarizer design

The reflection and transmittance of s- and p-polarized lights should be treated separately at nonzero angle incidence. By choosing two special film materials whose refractive indices meet the Brewster condition in a given incident angle, the reflection of p-polarized light can be eliminated. When the two materials are fabricated into multilayer stacks, the reflection of s-polarized light can be largely increased while the reflection of p-polarized light keeps low. According to this principle, a film polarizer with bandwidth of 198 nm or even more is designed.     

Laser-induced damage threshold in n-on-1 regime of Ta_2O_5 films at 532,800,and 1064 nm

Ta_2O5 films were prepared with conventional electron beam evaporation and annealed in O_2 at 673 K for 12h.Laser-induced damage thresholds(LIDTs)of the films were performed at 532 and 1064 nm in 1-on-1 regime firstly,and then were performed at 532,800,and 1064 nm in n-on-1 regime,respectively- The results showed that the LIDTs in n-on-1 regime were higher than that in 1-on-1 regime at 532 and 1064 nm.In addition,in n-on-1 regime,the LIDT increased with the increase of wavelength.Furthermore, both the optical property and LIDT of Ta_2O_5 films were influenced by annealing in O_2.     

Suppression of ion migration in perovskite materials by pulse-voltage method

Hybrid halide perovskites have great potential for applications in optoelectronic devices. However, the typical ion migration in perovskite could lead to the non-repeatability of electrical measurement, instability of material, and degradation of device performance. The basic current-voltage behavior of perovskite materials is intricate due to the mixed electronic-ionic characteristic, which is still poorly understood in these semiconductors. Developing novel measurement schematic is a promising solution to obtain the intrinsic electrical performance without the interference of ion migration. Herein, we explore the pulse-voltage (PV) method on methylammonium lead tribromide single crystals to protect the device from the ion migration. A guideline is summarized through the analysis of measurement history and condition parameters. The influence of the ion migration on current-voltage measurement, such as repeatability and hysteresis loop, is under controlled. An application of the PV method is demonstrated on the activation energy of conductivity. The abruption of activation energy still exists near the phase transition temperature despite the ion migration is excluded by the PV method, introducing new physical insight on the current-voltage behavior of perovskite materials. The guideline on PV method will be beneficial for measuring halide perovskite materials and developing optoelectronic applications with new technique schematic.     

Moisture absorption characteristics of a SiO2 film from 2 to 3 μm

We prepare SiO2 coatings on different substrates by either electron-beam evaporation or dual ion-beam sputtering. The relative transmittances of the Si O2 coatings are measured during the heating process. The Si O2 coating microstructures are studied. Results indicate that the intensity and peak position of moisture absorption are closely related to the microstructures of the coatings. The formation of microstructures depends not only on the preparation process of the coatings but also on the substrate characteristics.     

Laser-conditioning mechanism of ZrO_2/SiO_2 HR films with fitting damage probability curves of laser-induced damage

<正>The method of fitting damage probability curves of laser-induced damage is introduced to investigate the laser-conditioning mechanism of ZrO_2/SiO_2 high reflection(HR) films.The laser-induced damage thresholds(LIDTs) of the sample are tested before and after the laser-conditioning scanning process.The parameters of the defects are obtained through the fitting process of the damage probability curve.It can be concluded that the roles of laser conditioning include two aspects:removing defects with lower threshold and producing new defects with higher threshold.The effect of laser conditioning is dependent on the competition of these two aspects.     

Experimental study of sweep control in e-beam evaporated optical coatings

<正>High performance optical coating requires excellent uniformity of thin-film.Keeping the surface of evaporation material flat is propitious for the stability of vapor plume,and can improve the uniformity of thin-film.Based on the principle of electron beam spot sweep,a pattern controller in domestic coater is designed.For the purpose of even evaporation during auto-sweep,the influence of the depth of material surface in the crucible on the evaporation characteristic is considered.Pre-melting and evaporation experiments are performed on melting material(Ti_3O_5),subliming material(SiO_2),and semi-melting, semi-subliming material(HfO_2).The sweeping experimental results show that using the designed sweep controller can make good performance on evaporation and pre-melting for the above materials.