高功率超宽带变压器油透镜天线设计与仿真

将TEM喇叭天线密封进填充变压器油的尼龙天线罩中,只要合理设计尼龙天线罩外形,使变压器油形成聚焦透镜,不仅能提高天线的功率容量,还能改善其辐射特性。基于变压器油的缩波效应和椭球的几何性质,借助几何光学理论,设计了一款具有聚焦能力的椭球变压器油透镜。变压器油的缩波效应能够增大TEM喇叭天线电尺寸,使TEM喇叭天线的辐射特性得到初步改善,透镜的聚焦能力使天线的定向性得到进一步改善。为了验证理论分析的正确性,另外设计了一款不具有聚焦能力的球状变压器油透镜作为参照,两款透镜天线仿真结果与理论分析吻合。与大气中的TEM喇叭天线相比,椭球变压器油透镜使TEM喇叭天线主波束变窄,远场电压峰峰值提高56.97%,阻抗带宽低频端从0.28GHz扩展到0.2GHz,功率容量达到18.43GW。     

限制性多源点偏心距增广问题

给定一个赋权图$G=（V,E;w,c）$以及图$G$的一个支撑子图$G_{1}=（V,E_{1}）$,这里源点集合$S=\{s_{1},s_{2},\cdots,s_{k}\}\subseteq V$,权重函数$w：E\rightarrow\mathbb{R}^{+}$,费用函数$c：E\setminus E_{1}\rightarrow\mathbb{Z}^{+}$和一个正整数$B$,本文考虑两类限制性多源点偏心距增广问题,具体叙述如下：（1）限制性多源点最小偏心距增广问题是要寻找一个边子集$E_{2}\subseteq E\setminus E_{1}$,满足约束条件$c（E_{2}）$$\leq$$B$,目标是使得子图$G_{1}\cup E_{2}$上源点集$S$中顶点偏心距的最小值达到最小;（2）限制性多源点最大偏心距增广问题是要寻找一个边子集$E_{2}\subseteq E\setminus E_{1}$,满足约束条件$c（E_{2}）$$\leq$$B$,目标是使得子图$G_{1}\cup E_{2}$上源点集$S$中顶点偏心距的最大值达到最小。本文设计了两个固定参数可解的常数近似算法来分别对上述两类问题进行求解。     

高分子纳米复合材料拉伸及压缩的分子动力学模拟

利用高分子-纳米粒子粗粒化模型,对高分子纳米复合材料(polymer nano-composites,PNC)的拉伸、压缩及平衡态过程进行分子动力学模拟研究.通过模拟PNC的拉伸及压缩过程,研究纳米粒子大小、质量分数对PNC力学性能的影响及拉伸、压缩过程中PNC体系微观交联网络的变化.在纳米粒子表面积或质量分数相同的情况下,小尺寸纳米粒子对PNC的力学性能增强效果更显著.对于含有质量分数不同的小尺寸纳米粒子的PNC体系,随纳米粒子质量分数增加,其力学性能增强,但增强程度逐渐减弱,且对于拉伸过程的材料增强效应,纳米粒子的质量分数存在最优值.在PNC体系中存在高分子-高分子(polymer-polymer)、高分子-纳米粒子(polymer-NP)2种微观交联网络,拉伸及压缩过程中PNC体系中2种微观交联网络的变化趋势不同,PNC拉伸及压缩产生应力的微观机制也相应有所不同.此外,对含质量分数不同的小尺寸纳米粒子的PNC平衡态过程的模拟研究表明,PNC体系中2种微观交联网络的比例直接影响其力学性能的变化,而纳米粒子的聚集则会降低PNC的力学性能增强效果.     

激光参数计量测试

简要介绍国防科工委光学计量一级站在激光参数计量测试方面的技术现状，以及激光功率、激光能量、激光空域和时域参数计量测试标准的工作原理、技术指标和量传情况。     

High-performance 4H-SiC junction barrier Schottky diodes with double resistive termination extensions

4H-SiC junction barrier Schottky (JBS) diodes with a high-temperature annealed resistive termination extension (HARTE) are designed, fabricated and characterized in this work. The differential specific on-state resistance of the device is as low as 3.64 m ·cm2 with a total active area of 2.46×10-3 cm2 . Ti is the Schottky contact metal with a Schottky barrier height of 1.08 V and a low onset voltage of 0.7V. The ideality factor is calculated to be 1.06. Al implantation annealing is performed at 1250℃ in Ar, while good reverse characteristics are achieved. The maximum breakdown voltage is 1000 V with a leakage current of 9×10-5 A on chip level. These experimental results show good consistence with the simulation results and demonstrate that high-performance 4H-SiC JBS diodes can be obtained based on the double HARTE structure.     

氮等离子体辅助脉冲激光沉积生长p型ZnO:N薄膜的光学和电学性质

通过氮气等离子体辅助脉冲激光沉积(PLD)技术制备了氮掺杂氧化锌(ZnO:N)薄膜.经过低温快速热退火(RTA)处理后,ZnO:N薄膜呈现p型导电特性.利用X射线光电子能谱(XPS)、光致发光(PL)和霍尔测量对ZnO:N薄膜中N的化学状态及其光学和电学性质进行了系列的研究.结果表明:所制得的p型ZnO:N薄膜为高度补...     

石英玻璃紫外波段折射率测量

 折射率是光学材料基本参数之一,采用直角照射法折射率测量原理,以光电瞄准法紫外光信号探测、气浮轴承构成精密测角仪角度精确测量、锁相放大器微弱信号检测、软件分析角度值与光强度变化的数据处理模型、计算机自动控制等手段,完成了一套光学材料紫外波段折射率测量仪,实现了光学石英玻璃紫外波段折射率自动测量,并实际测量得到了250 nm~450 nm波长下光学石英玻璃的折射率值。     

用密度泛函理论研究多氯代菲醌的结构和热力学性质

使用Gaussian 03程序,采用密度泛函理论(DFT)在B3LYP/6-31G*水平上对136个多氯代9,10-菲醌(PCPQ)系列化合物进行全优化和振动分析,得到各分子在298.15K、101.3kPa状态下的优势构型.结合Gaussian 03程序的输出文件,计算了PCPQ化合物在200K至1 000K的摩尔恒压热容(Cp,m).用SPSS13.0对Cp,m与温度进行多元线性回归.结果表明:氯原子取代模式对PCPQ化合物的扭角A(C4-C9-C10-C5)有很大的影响;与此同时,Cp,m与T,T-1和T-2之间有着很好的相关性(r2=1.00).     

Determination of the transport properties in 4H-SiC wafers by Raman scattering measurement

The free carrier density and mobility in n-type 4H-SiC substrates and epilayers were determined by accurately analysing the frequency shift and the full-shape of the longitudinal optic phonon--plasmon coupled (LOPC) modes, and compared with those determined by Hall-effect measurement and that provided by the vendors. The transport properties of thick and thin 4H-SiC epilayers grown in both vertical and horizontal reactors were also studied. The free carrier density ranges between 2×10¹⁸ cm^-3 and 8×10¹⁸ cm^-3 with a carrier mobility of 30--55 cm²/(V·s) for n-type 4H-SiC substrates and 1×10¹⁶--3×10¹⁶ cm^-3 with mobility of 290--490 cm²/(V·s) for both thick and thin 4H-SiC epilayers grown in a horizontal reactor, while thick 4H-SiC epilayers grown in vertical reactor have a slightly higher carrier concentration of around 8.1×10¹⁶ cm^-3 with mobility of 380 cm²/(V·s). It was shown that Raman spectroscopy is a potential technique for determining the transport properties of 4H-SiC wafers with the advantage of being able to probe very small volumes and also being non-destructive. This is especially useful for future mass production of 4H-SiC epi-wafers.     

Bichromatic coherent random lasing from dye-doped polymer stabilized blue phase liquid crystals controlled by pump light polarization

In this paper, we investigate the bichromatic coherent random lasing actions from the dye-doped polymer stabilized blue phase liquid crystals. Two groups of lasing peaks, of which the full widith at half maximum is about 0.3 nm, are clearly observed. The shorter- and longer-wavelength modes are associated with the excitation of the single laser dye (DCM) monomers and dimers respectively. The experimental results show that the competition between the two groups of the lasing peaks can be controlled by varying the polarization of the pump light. When the polarization of the pump light is rotated from 0° to 90°, the intensity of the shorter-wavelength lasing peak group reduces while the intensity of the longer-wavelength lasing peak group increases. In addition, a red shift of the longer-wavelength modes is also observed and the physical mechanisms behind the red-shift phenomenon are discussed.