Effective sideband cooling in an ytterbium optical lattice clock

Sideband cooling is a key technique for improving the performance of optical atomic clocks by preparing cold atoms and single ions into the ground vibrational state. In this work, we demonstrate detailed experimental research on pulsed Raman sideband cooling in a $^{171}$Yb optical lattice clock. A sequence comprised of interleaved 578 nm cooling pulses resonant on the 1st-order red sideband and 1388 nm repumping pulses is carried out to transfer atoms into the motional ground state. We successfully decrease the axial temperature of atoms in the lattice from 6.5 μK to less than 0.8 μK in the trap depth of 24 μK, corresponding to an average axial motional quantum number $\langle n_z\rangle<0.03$. Rabi oscillation spectroscopy is measured to evaluate the effect of sideband cooling on inhomogeneous excitation. The maximum excitation fraction is increased from 0.8 to 0.86, indicating an enhancement in the quantum coherence of the ensemble. Our work will contribute to improving the instability and uncertainty of Yb lattice clocks.     

First-Principles Calculations of Atomic and Electronic Properties of T1 and In on Si（111）

The atomic and electronic structures of T1 and In on Si（111） surfaces are investigated using the firstprinciples total energy calculations. Total energy optimizations show that the energetically favored structure is 1/3 ML T1 adsorbed at the T4 sites on Si（111） surfaces. The adsorption energy difference of one T1 adatom between （√3 × √3） and （1 × 1） is less than that of each In adatom. The DOS indicates that TI 6p and Si 3p electrons play a very important role in the formation of the surface states. It is concluded that the bonding of TI adatoms on Si（111） surfaces is mainly polar covalent, which is weaker than that of In on Si（111）. So T1 atom is more easy to be migrated than In atom in the same external electric field and the structures of T1 on Si（111） is prone to switch between （√3 × √3） and （1 × 1）.     

光谱法研究2-(4-二甲氨基苯基)-5-氟-6-吗啉-1-氢-苯并咪唑与小牛胸腺DNA的相互作用

研究了2-(4-二甲氨基苯基)-5-氟-6-吗啉-1-氢-苯并咪唑(1)在不同pH条件下的紫外-可见吸收光谱,采用非线性最小二乘法得出分子1的三级加质子常数lgβ₁, lgβ₂, lgβ₃分别为4.96±0.03, 5.72±0.07和7.95±0.10。当pH 3.40时,分子1主要以一价离子状态存在,紫外-可见吸收光谱及荧光光谱表明该条件下分子与小牛胸腺DNA存在明显的相互作用,并得出分子1与DNA的结合常数K_b为(2.30±0.10)×104 mol-1·L。当分子浓度为10-8～1.2×10-6 mol·L-1时,荧光强度随DNA含量的增加而线性增强,分子1是一种潜在的测定DNA的定量试剂。     

表面活性剂增敏光度法测定锌

在弱酸性(pH=4.5)介质中,非离子表面活性剂Tween-80存在下,7-(苯并噻唑-2-偶氮)-8-羟基喹啉-5-磺酸(BTAQS)与锌形成2:1的紫色配合物,最大吸收波长位于580nm处,表观摩尔吸光系数为7.4×104L·mol-1·cm-1,锌含量在0-6μg/25mL范围内符合比耳定律。测定矿样中的锌,结果满意。     

不同中心波长飞秒脉冲激发InAs表面辐射太赫兹波的机理研究

研究了p型(100)InAs在不同中心波长飞秒激发光(750—850nm)作用下的太赫兹(THz)波辐射特性.这种太赫兹辐射的光谱性质与光学Dember效应密切相关，飞秒脉冲激发下产生的载流子在InAs表面的Dember场内做加速运动，从而辐射出THz电磁波.实验结果表明：不同中心波长的激发光作用下，InAs表面产生的Dember电场、光生载流子浓度、谷间散射效应以及处于不同状态的载流子数目都发生了变化，因而激发出太赫兹波的功率、振幅、频谱分布和有效谱宽是不同的.这项研究将有利于THz时域光谱技术以及实验     

A2B模型阻尼受迫振动方程组的通解

导出了A2B模型阻尼受迫振动方程组的通解,并讨论其算例和图像.     

Multiband Terahertz Photonic Band Gaps of Subwavelength Planar Fractals

Optical transmission properties of subwavelength planar fractals in terahertz （THz） frequency regime are studied by means of time-domain spectroscopy. The transmission spectra with multiple pass bands and stop bands are observed. The tunable photonic band gaps are realized by changing the angle between the principle axis of planar fractal and the polarization of THz wave. The possible application of the subwavelength optical component is discussed. We attribute the detected transmittance from subwavelength fractals to localized resonances.     

~(147)Pm激发的ZnS∶Cu,Cl发光粉的研究

以高纯ZnS粉末为基质,采用高温转相、扩散,以及表面涂敷工艺,制得了147Pm激发的ZnS∶Cu,Cl发光粉。分析了ZnS∶Cu,Cl的晶体结构,测量了ZnS∶Cu,Cl的激发光谱、发射光谱、发光亮度。其晶体结构主要是六方纤锌矿型结构,激发光谱峰值波长为341nm,发射光谱峰值波长为513nm,初始发光亮度达到312mcd/m2。由激发光谱的峰值波长341nm推算得到六方ZnS晶体的禁带宽度为3.64eV。分析了147Pm激发的ZnS∶Cu,Cl发光粉的发光寿命,其发光寿命达到5年以上。还探讨了该放射性发光粉的发光机理。147Pm激发的ZnS∶Cu,Cl的稳定发光,实际上是激发过程与复合过程的准平衡。ZnS∶Cu,Cl的绿色发光来源于深施主-深受主对的复合发射。实验结果的分析表明,ZnS∶Cu,Cl中深施主-深受主之间的能级间隔约为2.42eV。     

Improvement of electro-optic performances in white organic light emitting diodes with color stability by buffer layer and multiple dopants structure

A series of white phosphorescent OLED devices with buffer layer and multiple dopant structure is investigated in order to obtain better electro-optic performances and color stability. The color coordinate and color stability are related to the location of multiple dopants layer, and the optimized location can compensate for the change of the blue emission intensity under a high voltage and stabilize the spectrum. The electro-optic performances and color stability can be further improved by changing the composition and thickness of the buffer layer between the emitting layer and the electron transport layer.In device B2, the distance from multiple dopant layer to buffer layer is 2 nm and the thickness of buffer layer is 5 nm,the maximum luminance, current density, and power efficiency can reach 9091 cd/m~2, 364.5 mA/cm~2, and 26.74 lm/W,respectively. The variation of international commission on the illumination(CIE) coordinate of device B2 with voltage increasing from 4 V to 7 V is only(0.006, 0.004).     

三维拓扑绝缘体antidot阵列结构中的磁致输运研究

利用聚焦离子束刻蚀技术在拓扑绝缘体Bi_2Se_3薄膜中刻蚀了纳米尺度的反点(antidot)阵列,并对制作的三个器件进行了系统的电学输运测量研究.低温下,所有器件中都观察到明显的弱反局域化效应.通过对弱反局域化效应的分析,发现器件一(Dev-1,不含有antidot阵列)和器件二(Dev-2,含有周期较大的antidot阵列)是始终由一个导电通道主导的量子输运系统,但在器件三(Dev-3,含有周期较小的antidot阵列)中能明确观察到较低温度下存在两个独立的导电通道,而在较高温度下Dev-3表现为由一个导电通道主导的量子输运系统.