排序方式: 共有52条查询结果,搜索用时 314 毫秒
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在不同的漏偏压下,研究了钝化和不同场板尺寸AlGaN/GaN HEMT对电流崩塌的抑制能力.实验结果表明,钝化器件对电流崩塌的抑制能力随着漏偏压的升高而显著下降;在高漏偏压下,场板的尺寸对器件抑制崩塌的能力有较大影响,而合适尺寸的场板结构在各个漏偏压下都能够很好的抑制电流崩塌.深入分析发现,场板结构不仅能够抑制虚栅的充电过程,而且提供了放电途径,有利于虚栅的放电,从而抑制电流崩塌.在此基础上,通过建立场板介质对虚栅放电的模型,解释了高漏偏压下场板的尺寸对器件抑制崩塌的能力有较大影响的原因. 相似文献
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We develop a heterojunction-based Schottky solar cell consisting of n-type GaN and PEDOT:PSS and also investigate the effect of annealing on the performance of the solar cell. The results show that the open circuit voltage (Voc) increases from 0.54 V to 0.56 V, 0.71 V and 0.82 eV while decreases to 0.69 eV after annealing at 100 ℃, 130 ℃, 160 ℃, and 200 ℃, respectively, which can be ascribed to the change of barrier height of PEDOT:PSS/GaN Schottky contact induced by variation of the work function of the PEDOT:PSS. Furthermore, the conductivity and surface roughness measurements of the PEDOT:PSS indicate that annealing can increase the grain size and improve the connectivity between PEDOT and PSS particles, and cause thermal degradation at the same time, which leads to the rise in short-circuit current density (ISC) up to 160 ℃ and the dropoff in ISC after annealing at 200 ℃. 相似文献
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Investigation of passivation effects in AlGaN/GaN metal-insulator-semiconductor high electron-mobility transistor by gate-drain conductance dispersion study 下载免费PDF全文
This paper studies the drain current collapse of AlGaN/GaN metal-insulator-semiconductor high electron-mobility transistors (MIS-HEMTs) with NbAlO dielectric by applying dual-pulsed stress to the gate and drain of the device.For NbAlO MIS-HEMT,smaller current collapse is found,especially when the gate static voltage is 8 V.Through a thorough study of the gate-drain conductance dispersion,it is found that the growth of NbAlO can reduce the trap density of the AlGaN surface.Therefore,fewer traps can be filled by gate electrons,and hence the depletion effect in the channel is suppressed effectively.It is proved that the NbAlO gate dielectric can not only decrease gate leakage current but also passivate the AlGaN surface effectively,and weaken the current collapse effect accordingly. 相似文献
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Hybrid solar cells based on poly(3-hexylthiophene)(P3HT)and Galium nitride(GaN)nanoparticle bulk heterojunction are fabricated and analyzed.The GaN nanocrystal is synthesized by means of a combination of sol–gel process with high temperature ammoniation using Ga(OC2H5)as a precursor.Their characteristics are determined by X-ray diffraction,X-ray photoelectron spectroscopy,and scanning electron microscopy.With the addition of GaN nanoparticle to P3HT,the device performance is greatly enhanced. 相似文献
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在不同的漏偏压下,研究了钝化和不同场板尺寸AlGaN/GaN HEMT对电流崩塌的抑制能力.实验结果表明,钝化器件对电流崩塌的抑制能力随着漏偏压的升高而显著下降;在高漏偏压下,场板的尺寸对器件抑制崩塌的能力有较大影响,而合适尺寸的场板结构在各个漏偏压下都能够很好的抑制电流崩塌.深入分析发现,场板结构不仅能够抑制虚栅的充电过程,而且提供了放电途径,有利于虚栅的放电,从而抑制电流崩塌.在此基础上,通过建立场板介质对虚栅放电的模型,解释了高漏偏压下场板的尺寸对器件抑制崩塌的能力有较大影响的原因.
关键词:
AlGaN/GaN HEMT
场板
电流崩塌 相似文献
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利用Monte-Carlo方法和转移矩阵法研究了具有不同表面交换耦合Js和薄膜厚度 磁性多层 膜的表面和尺寸对磁相变的影响.模拟结果表明,系统的相变温度随薄膜层数的变化取决于Js/J(J为体内交换耦合),当Js/J大于某一临界值时,由于表面磁 有序先于体内磁有序 ,系统的相变温度随薄膜层数的增多而降低,反之,表面磁无序可与体内磁有序共存,系统 的相变温度随薄膜层数的增多而升高;当Js/J较小时,随Js增大 ,系统的居里温度缓慢 升高,趋近于体内相变温度,而当Js/J较大时,随Js增大,系统的 居里温度 呈线性升高.模拟结果与用转移矩阵法推导出的结果相当符合,且很好地解释了实验事实.
关键词:
磁星多层膜
交换耦合
Monte-Carlo模拟
转移矩阵法 相似文献