氮气氛中高温退火对ZnO薄膜发光性质的影响

以二乙基锌和水汽分别作为锌源和氧源,用LP-MOCVD方法在p型Si(100)衬底上生长了单一取向的ZnO薄膜。对得到的样品在氮气气氛中进行高温热处理,退火温度分别为900,1000,1100℃。利用室温PL谱、XRD、AFM、XPS等方法对样品的性质进行了研究。研究表明:(1)随着退火温度的升高,样品的结晶性质也逐渐提高,从表面形貌观察到晶粒尺寸逐渐增大;(2)当退火温度从900℃升高至1000℃时,样品的光致发光谱中可见光波段的发光强度有所减弱,而紫外波段的发光强度明显增强;当退火温度升高至1100℃时,可见光波段的发光几乎完全被抑制,而紫外波段的发光强度急剧增强。分析认为,高温退火改善晶体结晶质量的同时调制了样品的Zn/O比,氮气气氛下的热处理使得样品内的氧原子逸出,来自受主缺陷OZn的可见发射随温度升高逐渐减弱,而当退火温度达到1000℃以上时样品成为富锌状态,此时与施主缺陷Zni有关的紫外发射急剧增强。     

Effect of Zn Interstitials on Enhancing Ultraviolet Emission of ZnO Films Deposited by MOCVD

ZnO films are grown on Si （111） substrates by a metal organic chemical vapor deposition method. Samples with different stoichiometric composition of Zn and 0 are obtained by varying Ⅱ/Ⅵ molar ratio between 3 and 1/3 in precursors. The x-ray photoelectron spectroscopy and photoluminescenee results show that the ultraviolet emission enhances with the increasing Zn/O composition ratio of the samples. It is suggested that the supertfluous Zn atoms pile up at interstitial positions to form Zn interstitial defects. The radiated recombination of the coupling of free exeitons with donor Zn interstitial enhances the ultraviolet emission of the samples.     

Stochastic Simulation of Turing Patterns

We investigate the effects of intrinsic noise on Turing pattern formation near the onset of bifurcation from the homogeneous state to Turing pattern in the reaction-diffusion Brusselator. By performing stochastic simulations of the master equation and using Gillespie＇s algorithm, we check the spatiotemporal behaviour influenced by internal noises. We demonstrate that the patterns of occurrence frequency for the reaction and diffusion pro- cesses are also spatially ordered and temporally stable. Turing patterns are found to be robust against intrinsic fluctuations. Sfochastic simulations also reveal that under the influence of intrinsic noises, the onset of Turing instability is advanced in comparison to that predicted deterministically.     

射频辅助N掺杂ZnO薄膜的生长及其光电特性

在MOCVD设备中采用改进的射频辅助生长装置,通过裂解N2及N-Al共掺杂的方法进行ZnO的p型掺杂研究。通过二次离子质谱(SIMS)、X射线衍射(XRD)、原子力显微镜(AFM)、光致发光(PL)谱等方法分析了薄膜中N杂质的浓度,以及射频功率与晶体质量、表面形貌以及光学特性之间的关系,并与Al掺杂和N掺杂的ZnO薄膜进行对比。实验结果表明,N掺杂的浓度高达1020cm-3;N-Al共掺杂极大地增加了ZnO的成核速率,其主要原因是N离化所起的作用;N-Al共掺的ZnO薄膜显示出p型性质,而N掺杂的ZnO薄膜由于N原子处于非激活状态而呈现高阻,这说明N-Al共掺杂对ZnO中N原子的活化起到一定作用。     

ZnO薄膜的椭偏和DLTS特性

用射频磁控溅射在硅衬底上淀积氧化锌薄膜,并对样品分别作氮气、空气、氧气等不同条件下退火处理。为研究退火气氛对ZnO/Si薄膜中缺陷以及折射率的影响,由深能级瞬态谱(DLTS)以及椭偏测量方法进行了检测。椭偏测量结果表明相对原始生长的样品,在氮气和空气退火使ZnO薄膜折射率下降,但氧气中退火使折射率升高。我们对折射率的这种变化机理进行了解释。DLTS测量得到一个与Zni**相关的深能级中心E1存在,氧气气氛退火可以消除E1能级。在氮气退火情况下Zn*i*的存在对抑制VO引起的薄膜折射率下降有利。     

用微束激光穿刺技术将商陆抗病毒蛋白(PAP)cDNA导入马铃薯的研究

以马铃薯(Solanum tuberosum L.)品种“津引8号”微薯切片作为外植体,采用微束激光穿刺技术获得了商陆抗病毒蛋白(PAP)cDNA的导入、整合与表达.实验首次利用庆大霉素筛选马铃薯再生苗,庆大霉素筛选浓度为80mg/L,共得到65株庆大霉素抗性苗,全部移栽成活.PCR扩增和PCR-Southern杂交分析表明,PAP cDNA已经稳定整合到马铃薯基因组.攻毒实验发现,多数转基因植株生长健康,对供试病毒PVX具有高度抗性.     

毛细管胶束电动色谱定量方法研究

在前文中,我们报道了毛细管胶束电动色谱(MECC)的原理、装置,电中性物质的分离以及各物理因素对分离的影响。本文在前文的基础上,对MECC中保留时间重现性,峰高、峰面积定量的重现性、线性和检测限等进行了较为系统的研究,并讨论了进样时间对峰高和峰面积的影响。     

柱上衍生反相色谱法测定金属配合物的稳定常数

提出一种计算金属配合物稳定常数的新方法。应用住上衍生反相高效液相色谱法,以二乙基二硫代氨基甲酸钠为配体,测定金属配合物的保留时间,用以推导金属配合物的稳定常数。     

离子排斥色谱法测定马齿苋中低分子羧酸

以２．０ｍｍｏｌ／Ｌ对甲苯磺酸为淋洗液,用非抑制型电导检测离子排斥色谱法测定了马齿苋叶及茎中的柠檬酸、丙二酸、苹果酸、抗坏血酸、琥珀酸、反丁烯二酸和乙酸。     

In situ spectroelectrochemical behaviour of nanocrystalline TiO_2 thin films electrode fabricated by pulsed laser deposition

Nanocrystalline titanium oxide thin films have been successfully deposited on ITO coated glass by pulsed laser ablation of metallic Ti target in O_3/O_2 ambient gases. The intercalation of Li ions in the anatase TiO_2 film electrode is examined by cyclic vohammetry. The electrochromic behaviour of TiO_2 electrode is investigated by in-situ visible transmittance measurement, and two absorption bands at 420 and 650 nm are observed. The absorption falling and rising in color changing with excellent revisibility is relative to the insertion and deintercalation processes of Li ion. These resuits suggest that nanocrystalline titanium oxide films fabricated by pulsed laser deposition exhibit excellent spectroelectrochemical property.