Dependence of Photovoltaic Property of ZnO/Si Heterojunction Solar Cell on Thickness of ZnO Films

N-ZnO/p-Si heterojunctions are prepared by sputtering deposition of intrinsic ZnO films on p-Si substrates. Thicknesses of ZnO films are altered by varying the deposition time from I h to 3h. The electrical properties of these structures are analysed from capacitance-voltage （C V） and current-voltage （I-V） characteristics performed in a dark room. The results demonstrated that all the samples show strong rectifying behaviour. Photovoltaie property for the samples with different thicknesses of ZnO films are investigated by measuring open circuit voltage and short circuit current. It is found that photovoltages are kept to be almost constant of 320 m V along with the thickness while photoeurrents changing a lot. The variation mechanism of the photovoltade effect as a function of thickness of ZnO films is investigated.     

Effect of Annealing Temperature on Structural and Optical Properties of N-Doped ZnO Films

Nitrogen-doped ZnO （ZnO：N） films are prepared by thermal oxidation of sputtered Zn3N2 layers on A1203 substrates. The correlation between the structural and optical properties of ZnO：N films and annealing temperatures is investigated. X-ray diffraction result demonstrates that the as-sputtered Zn3N2 films are transformed into ZnO：N films after annealing above 600℃. X-ray photoelectron spectroscopy reveals that nitrogen has two chemical states in the ZnO：N films： the No acceptor and the double donor （N2）o. Due to the No acceptor, the hole concentration in the film annealed at 700℃ is predicted to be highest, which is also confirmed by Hall effect measurement. In addition, the temperature dependent photoluminescence spectra allow to calculate the nitrogen acceptor binding energy.     

YAG:Ce荧光粉体的柠檬酸盐分解法制备和表征

通过对柠檬酸盐分解法的改进,在800℃的低温下合成了YAG:Ce立方晶荧光粉体,用X-射线衍射法研究了YAG的成相过程.结果表明:Y2O3与Al2O3的摩尔比为33∶5时更易形成YAG相,成相过程是由无定型态直接转变为YAG相的.同时考察了样品的发光性质.     

碳化气体引入温度对3C-SiC薄膜生长的影响

通过低压化学气相沉积方法,在Si(100)衬底上生长了高度择优取向的3C-SiC(100)薄膜.SiC(200)峰的摇摆曲线表明SiC薄膜的结晶质量随着丙烷气体引入温度(Tgi)的升高而增加.选区电子衍射像表明高Tgi下生长的薄膜比低Tgi下生长的薄膜具有更好的取向.典型的SiC薄膜高分辨像中观察到了孪晶和层错.表面场发射扫描电镜像表明随着Tgi的升高,SiC薄膜的表明形貌发生了改变.     

全固态薄膜锂/锂离子电池的研究进展

本文介绍了全固态薄膜锂/锂离子电池发展;对全固态薄膜锂/锂离子电池最近的研究进展进行了综述分析,并指出了今后研究的方向。     

非掺杂ZnO薄膜中紫外与绿色发光中心

用直流反应溅射方法在硅衬底上淀积了ZnO薄膜,测量它们的光致发光(PL)光谱,观察到两个发光峰,峰值能量分别为3.18(紫外峰,UV)和2.38eV(绿峰).样品用不同温度分别在氧气、氮气和空气中热处理后,测量了PL光谱中绿峰和紫外峰强度随热处理温度和气氛的变化,同时比较了用FP-LMT方法计算的ZnO中几种本征缺陷的能级位置.根据实验和能级计算的结果,推测出ZnO薄膜中的紫外峰与ZnO带边激子跃迁有关,而绿色发光主要来源于导带底到氧错位缺陷(O_Zn)能级的跃迁,而不是通常认为的氧空 关键词： ZnO薄膜 热处理 光致发光光谱 缺陷能级     

高效液相色谱法测定血浆中米非司酮

建立了测定血浆中米非司酮浓度的高效液相色谱分析方法。血浆样品以乙醚提取,常温下负压挥发至干,所得残渣用甲醇浸溶后进行测定。Spherisorb C18(250 mm×4.6 mmi.d.,5μm)为色谱柱,流动相为甲醇-乙腈-水(50 25 25)溶液,检测波长为302 nm,用外标法定量。结果表明,在0.05~10.00 mg.L-1范围内呈线性,检出限为0.01 mg.L-1;平均回收率为98.2%,日内、日间平均精密度分别为7.0%,8.3%。米非司酮血浆样品的萃后残渣于-20℃可保存至少7d。     

Ag掺杂p型ZnO薄膜及其同质结的光电性质

采用磁控溅射技术在Si基片上生长了Ag掺杂的ZnO薄膜,XRD测试表明所得薄膜结晶性质良好,未出现Ag的分相。未掺杂和Ag掺杂氧化锌薄膜的低温(10K)光致发光(PL)谱显示:Ag的掺入使得中性施主束缚激子发射(D0X)显著减弱,并且在3.315eV处观测到了与Ag有关的施主-受主对(DAP)发射,受主缺陷的形成归因于掺入的Ag替位Zn。计算得到受主能级离价带顶约110meV。霍尔效应测得电阻率约0.1Ω.cm,迁移率约36cm2/V.s,空穴浓度约1.7×1018cm-3。在此基础上制备了ZnO∶Ag/ZnO的同质结,I-V测试显示了明显的整流特性,且反向漏电流很小。所有结果表明Ag掺杂的氧化锌薄膜已经转化为p型。     

孔隙射流位置对直扩压叶栅壁面静压及流谱影响

对带有孔隙射流的某大折转角直扩压叶栅性能进行了实验研究,分析了不同位置孔隙射流对壁面静压及极限流线的影响.结果表明,孔隙射流能够改善角区流动,同时降低叶片中部损失;最佳开孔位置位于25%相对叶高处,总压损失系数相对无孔隙射流叶栅降低4.9%;孔隙位置对端壁静压的影响不大.     

光纤光栅径向受力检测技术

对光纤布喇格光栅径向受力特性进行了理论与实验研究,给出了光纤布喇格光栅的径向受力灵敏度,并利用可调F-P标准具设计了一套解调光纤布喇格光栅反射峰劈裂值的实验系统.此系统消除了外界环境对F-P标准具初始腔长的干扰所引起的误差,系统的准确度达到了0.02 nm.