采用HfO2/SiO2溶胶-凝胶薄膜制备衍射光栅

采用溶胶-凝胶方法制备了具有光敏性的HfO2/SiO2溶胶-凝胶薄膜,并利用其光敏性制备了衍射光栅.采用XPS分析了薄膜的成份,证实了Hf元素的存在.并用椭偏仪测试了薄膜的折射率,结果证实了HfO2的加入确实提高了体系的折射率.利用其光敏性,采用X射线作曝光光源通过掩模进行曝光,利用曝光部分与未曝光部分的溶解度差,在薄膜上制备了高为0.8 μm、周期为1 μm的衍射光栅.     

双酚A人工抗原的光谱表征及免疫鉴定研究

双酚A(bisphenol A,BPA)是一种酚类环境雌激素,即使极低剂量残留对人类健康也有危害。为了建立其简单快速并适应现场检测的免疫分析方法,必须先合成它的人工抗原并进行鉴定。通过对双酚A进行结构修饰,用碳二亚胺将结构修饰了的双酚A与牛血清蛋白相偶联,经透析得到纯的双酚A人工抗原并冷冻干燥备用。然后用紫外光谱、红外光谱和免疫方法对人工抗原进行鉴定。结果表明,合成的人工抗原紫外光谱图中具有蛋白质和双酚A的特征吸收峰;人工抗原红外光谱图中呈现双酚A和牛血清蛋白的红外特征吸收峰;通过竞争ELISA试验表明用合成的人工抗原免疫的Balb/c小鼠血清中产生了双酚A的抗体。三种方法综合鉴定结果表明双酚A人工抗原合成成功,该人工抗原可以进一步用于制备抗双酚A的单克隆抗体。     

激光诱导荧光探测水体中溶解有机物浓度

用Nd∶YAG激光器的三倍频355 nm光作为激发光源,根据激光诱导荧光(LIF)方法激发并探测污染水体的荧光光谱.通过对荧光光谱的分析处理研究归一化荧光强度,即450 nm处水中溶解有机物(DOM)峰与405 nm处水的拉曼峰的比值,反演溶解有机物浓度.用商品腐殖酸和去离子水配置成已知浓度的溶液代替标准DOM溶液进行标定,得到回归方程.结果证明,DOM的归一化荧光强度与水体中DOM浓度有较好的线性关系,因此LIF方法是对大面积水域水质进行动态遥测的较理想方法.     

Particle-in-Cell/Monte Carlo Collision simulation of planar DC magnetron sputtering

In this paper a numerical simulation of a planar DC magnetron discharge is performed with the Particle-in Cell/Monte Carlo Collision （PIC/MCC） method. The magnetic field used in the simulation is calculated with finite element method according to experimental configuration. The simulation is carried out under the condition of gas pressure of 0.665 Pa and voltage magnitude of 400V. Typical results such as the potential distribution, charged particle densities, the discharge current density and ion flux onto the target are calculated. The erosion profile from the simulation is compared with the experimental data. The maximum erosion position corresponds to the place where the magnetic field lines are parallel to the target surface.     

3,7-二硝基亚氨基-2,4-二氮杂双环[3,3,0]辛烷的放热分解反应动力学

在程序升温条件下 ,用DSC研究了标题化合物的放热分解反应动力学 .用线性最小二乘法、迭代法以及二分法与最小二乘法相结合的方法 ,以积分方程、微分方程和放热速率方程拟合DSC数据 .在逻辑选择建立了微分和积分机理函数的最可几一般表达式后 ,用放热速率方程得到相应的表观活化能 (Ea)、指前因子 (A)和反应级数 (n)的值 .结果表明 :该反应的微分形式的经验动力学模式函数、Ea 和A值分别为 (1-α) 0 .44、2 30 .4kJ/mol和 10 18.16s-1.借助加热速率和所得动力学参数值 ,提出了标题化合物放热分解反应的动力学方程 .该化合物的热爆炸临界温度为 30 2 .6℃ .上述动力学参数对分析、评价标题化合物的稳定性和热变化规律十分有用 .     

The design and artificial realization of a controller of pulse coupling feedback

In this paper a controller of pulse coupling feedback (PCF) is designed to control chaotic systems. Control principles and the technique to select the feedback coefficients are introduced. This controller is theoretically studied with a three dimensional (3D) chaotic system. The artificial simulation results show that the chaotic system can be stabilized to different periodic orbits by using the PCF method, and the number of the periodic orbits are 2ⁿ× 3^mp (n and m are integers). Therefore, this control method is effective and practical.     

M+AsF6-(M=Li,Na,K,Rb和Cs)离子对的结构和振动光谱

利用abinitio计算方法研究了AsF6-阴离子和M AsF6-(M =Li ,Na ,K ,Rb 和Cs )直接接触离子对的结构和光谱行为。结果表明,具有C3V结构三齿相互作用的M AsF6-最稳定,二齿配位的结构只有在特定条件下才可能稳定存在。当形成离子对后,阳离子与AsF6-的相互作用将改变AsF6-的结构,这其中Li 的影响最大。另外,AsF6-光谱的变化可用来指认溶液中离子的缔合和离子对的种类。     

Application of Cosine Zone Plates to Image Encryption

We analyse the diffraction result of optical field after Cosine zone plate, and theoretically deduce its transform matrix. Under some conditions, its diffraction distribution is a mixture of fractional Fourier spectra. Then we use Cosine zone plate and its diffraction result to image encryption. Possible optical image encryption and decryption implementations are proposed, and some numerical simulation results are also provided.     

High uniformity and forming-free ZnO-based transparent RRAM with HfO_x inserting layer

The impacts of HfO_x inserting layer thickness on the electrical properties of the ZnO-based transparent resistance random access memory(TRRAM) device were investigated in this paper. The bipolar resistive switching behavior of a single ZnO film and bilayer HfO_x/ZnO films as active layers for TRRAM devices was demonstrated. It was revealed that the bilayer TRRAM device with a 10-nm HfO_x inserted layer had a more stable resistive switching behavior than other devices including the single layer device, as well as being forming free, and the transmittance was more than 80% in the visible region. For the HfO_x/ZnO devices, the current conduction behavior was dominated by the space-charge-limited current mechanism in the low resistive state(LRS) and Schottky emission in the high resistive state(HRS), while the mechanism for single layer devices was controlled by ohmic conduction in the LRS and Poole–Frenkel emission in the HRS.