Effect of nano-SiO2 films on the electron radiation induced conductivity of polyimide

The radiation induced conductivity (RIC) behaviors in nano-SiO2 deposited polyimide (PI) were investigated using the in situ measurement technique. The results indicate that, by comparison with the case of virgin polyimide, the RIC in nano-SiO2/polyimide shows low steady state values. Moreover, the steady state RIC is a power function of the dose rate with a power index of 0.659, lower than that of 0.76 in the virgin polyimide. The interfacial barrier and trapping effects are the main reasons for the change. Meanwhile, both of the interfacial effects also result in a unipolar carrier transportation mechanism in nano-SiO2 deposited PI from the dipolar one in the virgin PI. The mechanisms of the RIC behaviors are discussed in the paper.     

Radiation effects on MOS and bipolar devices by 8 MeV protons, 60 MeV Br ions and 1 MeV electrons

The radiation effects of the metal-oxide-semiconductor (MOS) and the bipolar devices are characterised using 8~MeV protons, 60~MeV Br ions and 1~MeV electrons. Key parameters are measured {\it in-situ} and compared for the devices. The ionising and nonionising energy losses of incident particles are calculated using the Geant4 and the stopping and range of ions in matter code. The results of the experiment and energy loss calculation for different particles show that different incident particles may give different contribution to MOS and bipolar devices. The irradiation particles, which cause larger displacement dose within the same chip depth of bipolar devices at a given total dose, would generate more severe damage to the voltage parameters of the bipolar devices. On the contrary, the irradiation particles, which cause larger ionising damage in the gate oxide, would generate more severe damage to MOS devices. In this investigation, we attempt to analyse the sensitivity to radiation damage of the different parameter of the MOS and bipolar devices by comparing the irradiation experimental data and the calculated results using Geant4 and SRIM code.     

位移损伤剂量法评估空间GaAs/Ge太阳电池辐照损伤过程

本文针对GaAs/Ge太阳电池,利用位移损伤剂量法研究了其在轨服役条件下的性能退化行为.首先在地面模拟辐照环境中,试验获得了在不同能量的电子和质子辐照下的电池性能随辐照注量的退化行为.基于上述实验结果以及计算获得的带电粒子在电池中的非电离能量损失(NIEL)获得了不同能量电子辐照位移损伤的等效指数n为1.7,电子损伤剂量转化为质子损伤剂量等效系数为5.2,并进一步建立了电池性能随位移损伤剂量的退化方程.利用该方法对国产GaAs/Ge太阳电池在500,22000和36000 km轨道带电粒子辐 关键词： GaAs/Ge太阳电池 辐照损伤 带电粒子 位移损伤剂量     

偏置条件对NPN及PNP双极晶体管电离辐射损伤的影响研究

本文采用低能电子辐照源对NPN及PNP晶体管进行辐照试验. 在辐照试验过程中, 针对NPN及PNP晶体管发射结施加不同的偏置条件, 研究偏置条件对NPN及PNP晶体管辐射损伤的影响. 使用Keithley 4200-SCS半导体特性测试仪在原位条件下测试了双极晶体管电性能参数随低能电子辐照注量的变化关系. 测试结果表明, 在相同的辐照注量条件下, 发射结反向偏置时双极晶体管的辐照损伤程度最大; 发射结正向偏置时双极晶体管的辐照损伤程度最小; 发射结零偏时双极晶体管的辐照损伤程度居于上述情况之间. 关键词： 双极晶体管 低能电子 电离辐射     

质子辐照对国产“一”字型保偏光纤损伤效应研究

航天器在空间环境中运行时,会受到质子的辐照,光纤环作为航天器上光纤陀螺的重要组成部件受辐照影响 最为严重.为了研究国产“一”字型保偏光纤因质子辐照导致辐照诱导损耗的变化规律及其辐照损伤机理, 选择质子能量为5 MeV和10 MeV,光源波长为1310 nm,原位测量了光纤传输功率变化情况,计算出辐照诱导损耗. 利用SRIM软件,模拟能量分别为5 MeV和10 MeV质子辐照在光纤中的电离和位移损伤分布.借助X 射线光电子能谱仪分析辐照前后O 1s和Si 2p解析谱,借助傅里叶变换红外光谱仪观察光纤辐照前后光谱变化情况研究发现,在波长为1310 nm处, 光纤的辐照诱导损耗随着质子注量的增加而增长,主要原因是由于光纤纤芯中Si-OH的浓度增加所导致. 而且能量为5 MeV质子辐照造成光纤的辐照诱导损耗比10 MeV严重,这是因为5 MeV质子在光纤纤芯处造成的 位移和电离损伤均比10 MeV严重,即产生的Si-OH数量多.     

电子辐照能量对Kapton/Al热控涂层光学性能的影响

 研究了电子辐照时，电子能量与累积通量对Kapton/Al热控涂层光学性能的影响。采用原位测量的手段记录了辐照前后的光谱反射系数。试验结果表明，电子辐照后Kapton/Al热控涂层的反射性能,在太阳光谱辐射强度较大的300~1 200nm波长区间产生较大程度退化。在电子辐照作用下，作为离子导电型聚合物的 Kapton薄膜表面没有发现辐照充电效应。辐照后涂层材料存在“退火效应”，或称“漂白效应”。Kapton/Al涂层太阳吸收比的变化量与电子辐照累积通量的变化关系成幂函数形式,其系数与指数的极大值与极小值分别出现在电子能量为50keV附近。在辐照累积通量相同时，该变化量随辐照电子能量的提高而增大。     

带电粒子辐照下石英玻璃和镀铝膜反射镜光学性能研究

提出低能带电粒子辐照下石英玻璃非弹性电离损伤的物理模型和速率方程，给出了电离效应产生带电离子、电子浓度的解析表达式.讨论了光密度与吸收剂量之间的变化关系，并与实验结果进行了比较.还给出光学反射镜反射率表达式及数学模拟结果.利用所建立的模型，可以定量描述低能带电粒子辐照特别是综合辐照时石英玻璃和镀金属膜反射镜光学性能随辐照剂量的变化情况.     

晶粒尺寸对1 MeV电子在金属Ni中能量沉积的影响

采用脉冲电沉积方法制备出高致密、高质量的纳米晶Ni, 并对其密度、组织成分和微观结构进行了表征. 利用高能粒子加速器产生的1 MeV高能电子为辐照源, 研究高能电子在纳米晶Ni和常规粗晶Ni中的能量损失. 通过辐照过程中放置的吸收剂量片来准确表征其电子的能量沉积. 结果表明, 晶粒尺寸对高能电子在材料中的能量沉积有明显的影响, 1 MeV电子在穿过一定厚度的金属Ni后, 在晶粒尺寸细小的纳米晶Ni中测得总的吸收剂量较大, 证明了高能电子在纳米材料中的总能量沉积较小, 从而表现出纳米材料抗辐照的优异性能. 关键词： 高能电子 纳米金属 辐射损伤     

PFPE脂润滑2Cr13钢摩擦副的真空摩擦磨损行为研究

利用销-盘式摩擦磨损试验机对PFPE脂润滑2Cr13钢摩擦副进行了不同滑动时间的真空滑动摩擦磨损试验.采用扫描电子显微镜(SEM)、X射线光电子能谱仪(XPS)和傅里叶变换红外光谱(FTIR)分别对磨损表面的形貌、化学状态及润滑脂的结构和成分进行了系统分析.结果表明:随着滑动时间的增加,由微切削磨损、轻微腐蚀磨损向严重腐蚀磨损、轻度局部剥落继续向严重黏着磨损、严重局部剥落的严重复合磨损转变.在真空摩擦过程中PFPE润滑脂主要以物理退化为主,即润滑脂中基础油和增稠剂的相对比例发生变化.同时,PFPE润滑脂与2Cr13钢在摩擦过程中发生化学反应,生成具有催化作用的Fe F3.但由于所生成的Fe F3量较少,并未使PFPE润滑脂发生化学降解.     

Degradation mechanisms of current gain in NPN transistors

An investigation of ionization and displacement damage in silicon NPN bipolar junction transistors (BJTs) is presented. The transistors were irradiated separately with 90-keV electrons, 3-MeV protons and 40-MeV Br ions. Key parameters were measured {\em in-situ} and the change in current gain of the NPN BJTS was obtained at a fixed collector current (I_{\rm c}=1~mA). To characterise the radiation damage of NPN BJTs, the ionizing dose D_{\i} and displacement dose D_{\d} as functions of chip depth in the NPN BJTs were calculated using the SRIM and Geant4 code for protons, electrons and Br ions, respectively. Based on the discussion of the radiation damage equation for current gain, it is clear that the current gain degradation of the NPN BJTs is sensitive to both ionization and displacement damage. The degradation mechanism of the current gain is related to the ratio of D_{\rm d}/(D_{\rm d}+D_{\rm i}) in the sensitive region given by charged particles. The irradiation particles leading to lower D_{\rm d}/(D_{\rm d}+D_{\rm i}) within the same chip depth at a given total dose would mainly produce ionization damage to the NPN BJTs. On the other hand, the charged particles causing larger D_{\rm d}/(D_{\rm d}+D_{\rm i}) at a given total dose would tend to generate displacement damage to the NPN BJTs. The Messenger--Spratt equation could be used to describe the experimental data for the latter case.