串列加速器装置的功能扩展

通过在2×1.7MV串列加速器前端设计并安装静电扫描装置和靶室,扩展了其0~30keV低能注入和沉积功能.利用低能离子注入的方法分别在Ni/SiO2和铜箔衬底上得到石墨烯薄膜,并运用Raman光谱和扫描电子显微镜研究了样品的形貌、薄膜层数及缺陷等性质.实验结果表明,在铜箔衬底上得到双层石墨烯薄膜.通过调试高能端和200keV注入机联机实验,在双束靶室中得到He,Li,C,N,Fe离子束,用于双束注入和辐照损伤等研究.     

C3N4/TiN交替复合膜的微结构研究

采用双阴极封闭型非平衡磁场dc反应磁控溅射离子镀制备C₃N₄/TiN复合交替膜,用X射线光电子能谱法分析了薄膜的组成,测量了薄膜的X射线衍射谱和氮化碳的透射电子衍射图像.氮化碳经氮化钛的强迫晶化作用,生成了β-C₃N₄和c-C₃N₄. 关键词：     

固体电解质Rb4Cu16I7Cl13制备及离子导电性研究

液态固体电解质材料的离子电导率低,安全性问题在一定程度上限制了其发展与应用,而固体电解质材料在室温下具有很好的稳定性和高的离子电导率值,具有较好的应用前景.本文采用机械化学球磨法制备固体电解质Rb₄Cu₁₆I₇Cl₁₃粉末,探索制备工艺和球磨参数,对其晶体结构进行解析、观察粉体微观结构、通过交流阻抗谱及等效电路分析得到了离子电导率与活化能、并详细探讨其离子传导性能与晶体结构的关系以及化学成分稳定性进行研究.实验结果表明,在480 rpm转速下球磨6 h时可得到纯的固体电解质Rb₄Cu₁₆I₇Cl₁₃物相.粉体晶粒尺寸分布均匀,均在20 nm-400 nm之间,室温下固体电解质Rb₄Cu₁₆I₇Cl₁₃离子电导率可达到0.213 S/cm且活化能为0.087(9)eV.在真空干燥条件下存放5天和12天后观察了微观形貌和化学稳定性...     

同步辐射穆斯堡尔谱学

同步辐射穆斯堡尔谱自从1985年取得突破后, 经历了20多年的长足发展, 已经成为穆斯堡尔谱学的一个成熟的分支。 目前同步辐射穆斯堡尔谱学由两个部分构成: 基于相干核共振散射机制的时域穆斯堡尔谱学和基于非相干非弹性核共振散射机制的X射线谱学。 第三代同步加速器的出现促进了时域穆斯堡尔谱学的发展, 测量得到穆斯堡尔激发态寿命τ期间衰变计数率与时间的关系, 观测到一些有趣的现象。 同步辐射穆斯堡尔谱既能做常规透射谱学研究, 测量各种超精细相互作用及f_LM, δ_SOD等穆斯堡尔参数, 也能利用非弹性核共振散射测量固体的声子谱, 并且也能测出f_LM和 δ_SOD及力常数等, 时域谱和非相干谱的测量精度都高于常规穆斯堡尔谱。 The idea of using synchrotron radiation as a Mössbauer source experienced a breakthrough in 1985, followed by steady development for more than 20 years. Synchrotron Mössbauer spectroscopy consists of two areas. The first one is the so called time domain Mössbauer spectroscopy based on coherent nuclear resonant scattering which permits determination of hyperfine interactions and other Mössbauer parameters such as f_LM and δ_SOD. The other is incoherent nuclear resonant inelastic X ray scattering, which provides vibration information of atoms in a solid, i.e., the phonon density of states. All the experiments have better accuracy than that obtained in conventional Mssbauer spectroscopy.     

Degradation of ferroelectric and weak ferromagnetic properties of BiFeO_3 films due to the diffusion of silicon atoms

Crystalline BiFeO3 （BFO） films each with a crystal structure of a distorted rhombohedral perovskite are characterized by X-ray diffraction （XRD） and high-resolution electron microscopy （HRTEM）. The diffusion of silicon atoms from the substrate into the BiFeO3 film is detected by Rutherford backscattering spectrometry （RBS）. The element analysis is per- formed by energy dispersive X-ray spectroscopy （EDS）. Simulation results of RBS spectrum show a visualized distribution of silicon. X-ray photoelectron spectroscopy （XPS） indicates that a portion of silica is formed in the diffusion process of silicon atoms. Ferroelectric and weak ferromagnetic properties of the BFO films are degraded due to the diffusion of silicon atoms. The saturation magnetization decreases from 6.11 down to 0.75 emu/g, and the leakage current density increases from 3.8 × 10^-4 upto7.1 × 10^-4 A/cm-2.     

Preparation of graphene on Cu foils by ion implantation with negative carbon clusters

We report on few-layer graphene synthesized on Cu foils by ion implantation using negative carbon cluster ions,followed by annealing at 950?C in vacuum.Raman spectroscopy reveals IG/I2Dvalues varying from 1.55 to 2.38 depending on energy and dose of the cluster ions,indicating formation of multilayer graphene.The measurements show that the samples with more graphene layers have fewer defects.This is interpreted by graphene growth seeded by the first layers formed via outward diffusion of C from the Cu foil,though nonlinear damage and smoothing effects also play a role.Cluster ion implantation overcomes the solubility limit of carbon in Cu,providing a technique for multilayer graphene synthesis.     

Copper ion beam emission in solid electrolyte Rb4Cu16I6.5Cl13.5

Copper ion conducting solid electrolyte Rb$_{4}$Cu$_{16}$I$_{6.5}$Cl$_{13.5 }$ was prepared by means of mechano-chemical method. The structure and morphology of the powder was investigated by x-ray diffraction and scanning electron microscopy. The grain size was estimated to be 0.2-0.9 μm and the ionic conductivity at room temperature was approximately 0.206 S/cm. The solid electrolyte Rb$_{4}$Cu$_{16}$I$_{6.5}$Cl$_{13.5 }$ was exploited for copper ion beam generation. The copper ion emission current of several nA was successfully obtained at acceleration voltages of 15 kV and temperature of 197 $^\circ$C in vacuum of 2.1$\times10^{-4}$ Pa. A good linear correlation between the logarithmic ion current $(\log I)$ and the square root of the acceleration voltage ($U_{\rm acc}$) at high voltage range was obtained, suggesting the Schottky emission mechanism in the process of copper ion beam generation.