锂离子电池正极材料LiNi1/3Co1/3Mn1/3O2在不同电解液中的性能研究

应用低热固相合成法制备锂离子电池正极材料L iCo1/3N i1/3Mn1/3O2.研究该材料的结构与形貌,并比较它在商品L iPF6盐和在实验室合成的L iBOB(L iB(C2O4)2)盐电解液中的电化学性能.在L iPF6/EC+DMC+DEC电解液中,该材料表现出优良的电化学性能,其于0.5C、1C、1.5C、2C、3C放电倍率的初始比容量依次为167、163、163、157、147mAh/g,电池的循环性能也较好,说明低热固相合成的材料的有较好的高倍率性能.在L iBOB/EC+DEC+DE电解液中,0.5C倍率下比容量为160 mAh/g,较之L iPF6盐电解液的相差不大,但在高倍率下的比容量有所下降.     

Lumped modeling with circuit elements for nonreciprocal magnetoelectric tunable band-pass filter

This paper presents a lumped equivalent circuit model of the nonreciprocal magnetoelectric tunable microwave bandpass filter.The reciprocal coupled-line circuit is based on the converse magnetoelectric effect of magnetoelectric composites,includes the electrical tunable equivalent factor of the piezoelectric layer,and is established by the introduced lumped elements,such as radiation capacitance,radiation inductance,and coupling inductance,according to the transmission characteristics of the electromagnetic wave and magnetostatic wave in an inverted-L-shaped microstrip line and ferrite slab.The nonreciprocal transmission property of the filter is described by the introduced T-shaped circuit containing controlled sources.Finally,the lumped equivalent circuit of a nonreciprocal magnetoelectric tunable microwave band-pass filter is given and the lumped parameters are also expressed.When the deviation angles of the ferrite slab are respectively 0° and45°,the corresponding magnetoelectric devices are respectively a reciprocal device and a nonreciprocal device.The curves of S parameter obtained by the lumped equivalent circuit model and electromagnetic simulation are in good agreement with the experimental results.When the deviation angle is between 0° and 45°,the maximum value of the S parameter predicted by the lumped equivalent circuit model is in good agreement with the experimental result.The comparison results of the paper show that the lumped equivalent circuit model is valid.Further,the effect of some key material parameters on the performance of devices is predicted by the lumped equivalent circuit model.The research can provide the theoretical basis for the design and application of nonreciprocal magnetoelectric tunable devices.     

Voltage-controllable magnetic skyrmion dynamics for spiking neuron device applications

Voltage-controlled magnetic skyrmions have attracted special attention because they satisfy the requirements for well-controlled high-efficiency and energy saving for future skyrmion-based neuron device applications.In this work,we propose a compact leaky-integrate-fire(LIF)spiking neuron device by using the voltage-driven skyrmion dynamics in a multiferroic nanodisk structure.The skyrmion dynamics is controlled by well tailoring voltage-induced piezostrains,where the skyrmion radius can be effectively modulated by applying the piezostrain pulses.Like the biological neuron,the proposed skyrmionic neuron will accumulate a membrane potential as skyrmion radius is varied by inputting the continuous piezostrain spikes,and the skyrmion radius will return to the initial state in the absence of piezostrain.Therefore,this skyrmion radius-based membrane potential will reach a definite threshold value by the strain stimuli and then reset by removing the stimuli.Such the LIF neuronal functionality and the behaviors of the proposed skyrmionic neuron device are elucidated through the micromagnetic simulation studies.Our results may benefit the utilization of skyrmionic neuron for constructing the future energy-efficient and voltage-tunable spiking neural networks.     

pH电位滴定法测定溶液中钙、镁离子与聚天冬氨酸的生成稳定常数

pH电位滴定法测定溶液中钙、镁离子与聚天冬氨酸的生成稳定常数;pH电位滴定;聚天冬氨酸;配位化学;钙离子;镁离子     

板片空间结构初始缺陷的动力稳定性影响分析

对板片空间结构体系的研究大都局限于静力载荷工况,结构在动力载荷作用下的稳定性及失效特征研究仍相对缺乏．板片空间钢结构先天存在各样缺陷,而缺陷对结构稳定性的影响不可忽略．本文引入拉丁超立方法,结合Budiansky-Roth 准则,提出适用于求解含初始缺陷结构动力临界荷载的方法,对板片空间结构初始缺陷的动力稳定性开展研究．研究表明,相比于其它抽样方法,拉丁超立方法能显著减少样本数,有效提高计算效率．针对典型的板片空间结构,施加不同方向的阶跃荷载,分析了节点位置偏差缺陷、杆件截面尺寸缺陷以及板片厚度缺陷对板片空间结构临界承载力的影响．结果显示,节点位置偏差缺陷对该结构临界承载力影响最为显著,其它两类缺陷影响甚微．     

考虑界面力学性能的组件及结构的协同优化

包含多个内嵌功能组件及支撑结构的多组件结构因其轻量化、多功能等优良特性被广泛应用于航空航天等领域.已有的多组件结构拓扑优化研究大多基于理想界面假设,忽略了材料连接界面可能发生的破坏. 本文针对包含多个内嵌式功能性组件的结构,考虑连接界面的力学性能, 对组件的形状、布局及支撑材料的拓扑进行协同优化,以实现多组件结构的优良承载性能. 首先,基于超椭圆模型对内嵌组件的形状及布局进行显式的参数化描述,并构造其水平集函数表达; 进而,结合组件及支撑材料的水平集拓扑描述、内聚力模型及扩展有限元方法(extended finite element method, XFEM), 在固定网格下对随优化迭代不断演化的结构拓扑及连接界面的力学性能进行准确描述;进一步, 建立水平集法框架下考虑界面力学性能的多组件结构拓扑优化列式,基于伴随变量法推导解析的灵敏度并采用梯度优化算法求解优化问题.本文采用该优化框架分别对内嵌组件的悬臂梁和MBB梁进行协同优化, 在优化过程中,发现组件的初始布局对最终设计有很大的影响, 并且可能导致不良结构.为了避免此情况, 本文提出了两个阶段的优化策略,即首先对组件布局和形状进行优化, 再进行结构和内嵌组件的协同优化.数值结果显示, 在优化结果中功能性组件及界面通常分布于结构受压应力作用的区域,且连接界面最优形状呈现为曲率较小的光滑曲线,该设计避免界面发生拉伸及剪切破坏, 有效提高了结构的承载力,同时也表明了本文所提出考虑连接界面力学性能拓扑优化方法的有效性.      

Ba0.97Ce0.8Ho0.2O3-α陶瓷的离子导电性及其燃料电池性能

The perovskite-type-oxide solid solution Ba0.97Ce0.8Ho0.2O3-α was prepared by high temperature solidstate reaction and its single-phase character was confirmed by X-ray diffraction. The ionic conduction of the sample was investigated using electrical methods at elevated temperatures, and the performance of the hydrogen-air fuel cell using the sample as solid electrolyte was measured, which were compared with those of BaCe0.8Ho0.2O3 - α. In wet hydrogen, BaCe0.8 Ho0.2 O3 - α almost exhibits pure protonic conduction at 600-1000 ℃, and its protonic transport number is 1 at 600-900 ℃ and 0.99 at 1000 ℃. Similarly,Ba0.97Ce0.8Ho0.2O3-α exhibits pure protonic conduction with the protonic transport number of 1 at 600-700 ℃, but its protonic conduction is slightly lower than that of BaCe0.8Ho0.2O3-α, and the protonic transport number are 0.99-0.96 at 800-1000 ℃. In wet air, the two samples both show low protonic and oxide ionic conduction. For Ba0.97Ce0.8Ho0.2O3-α, the protonic and oxide ionic transport numbers are 0.01-0.11 and 0.30-0.31 respectively, and for BaCe0.8Ho0.2O3-α, 0.01-0.09 and 0.27-0.33 respectively. Ionic conductivities of Ba0.97Ce0.8Ho0.2O3-α are higher than those of BaCe0.8Ho0.2O3-α under wet hydrogen and wet air. The performance of the fuel cell using Ba0.97Ce0.8Ho0.2O3-α as solid electrolyte is better than that of BaCe0.8Ho0.2O3-α. At 1000 ℃, its maximum short-circuit current density and power output density are 465 mA/cm2 and 112 mW/cm2, respectively.     

新型喹啉胺席夫碱的合成及其抗菌活性

对甲苯磺酸为催化剂,乙酰丙酮和8-氨基喹啉在甲苯中回流分水反应4 h合成了一个新型的喹啉胺席夫碱———乙酰丙酮缩8-氨基喹啉(1),其结构经1H NMR,IR,元素分析和X-射线单晶衍射表征。1属三斜晶系,P1空间群,晶胞参数a=7.996(3),b=8.069(2),c=10.284(4),α=99.943(6)°,β=111.581(8)°,γ=93.668(7)°,V=601.9(4)3,Z=2,Dc=1.298 g·cm-3,μ=0.086 mm-1,F(000)=250,R1=0.060 2,wR2=0.141 7。体外抗菌实验结果表明,1对大肠埃希氏杆菌具有明显抗菌性能。     

Accurate capacitance-voltage characterization of organic thin films with current injection

To deal with the invalidation of commonly employed series model and parallel model in capacitance-voltage (C-V) characterization of organic thin films when current injection is significant, a three-element equivalent circuit model is proposed. On this basis, the expression of real capacitance in consideration of current injection is theoretically derived by small-signal analysis method. The validity of the proposed equivalent circuit and theoretical expression are verified by a simulating circuit consisting of a capacitor, a diode, and a resistor. Moreover, the accurate C-V characteristic of an organic thin film device is obtained via theoretical correction of the experimental measuring result, and the real capacitance is 35.7% higher than the directly measured capacitance at 5-V bias in the parallel mode. This work strongly demonstrates the necessity to consider current injection in C-V measurement and provides a strategy for accurate C-V characterization experimentally.     

A terahertz on-chip InP-based power combiner designed using coupled-grounded coplanar waveguide lines

This article presents the design and performance of a terahertz on-chip coupled-grounded coplanar waveguide (GCPW) power combiner using a 50 μm-thick InP process. The proposed topology uses two coupled-GCPW lines at the end of the input port to substitute two quarter-wavelength GCPW lines, which is different from the conventional Wilkinson power combiner and can availably minimize the coverage area. According to the results obtained, for the frequency range of 210-250 GHz, the insertion losses for each two-way combiner and four-way combiner were lower than 1.05 dB and 1.35 dB, respectively, and the in-band return losses were better than 11 dB. Moreover, the proposed on-chip GCPW-based combiners achieved a compromise in low-loss, broadband, and small-size, which can find wide applications in terahertz bands, such as power amplifiers and signal distribution networks.