增感效应火焰原子吸收光谱法测定铁矿石中的微量铬

提出了增感效应火焰原子吸收光谱测定铁矿石微量铬的新方法。研究了表面活性剂十二烷基硫酸钠（ＳＤＳ）对铬的增感效果。增感效应可使火焰原子吸收光谱的灵敏度提高２７倍。本法已用于测定铁矿石中的微量铬,检测限为７．０μｇ／Ｌ,回收率为９１．１％￣１１５．９％,ＲＳＤ为４．０％。     

比光谱-导数-紫外分光光度法同时测定水中苯酚和苯胺

1 引言 苯酚、苯胺共存时,它们的紫外吸收光谱彼此重叠。同时测定混合组分中的各个组分可以应用多波长测定吸光度,然后计算各组分含量,或用多波长线性回归-导数分光光度法。比值导数波谱法能够方便地排除干扰,已用于各种多组分的测定。本文用这种方法研究了苯酚、苯胺混合物的测定,结果满意。2 实验部分     

液体和非晶态NiAl3合金结构的从头算分子动力学模拟

应用从头算分子动力学方法模拟了液体以及淬冷形成的NiAl₃合金体系,得到了它们的对相关函数、结构因子、键对分析信息.结果分析表明,在淬冷条件下得到的体系呈现非晶态性质,且非晶态结构类似于液态NiAl₃合金的结构,可以用液体结构近似描述非晶态性质.还进行了电子结构分析,得到液体NiAl₃合金的电子态密度和电荷分布.在液体镍铝合金中,镍为电子受体,部分电子由铝向镍转移,支持了Candy等人的XPS实验结果.镍铝间强烈作用,形成带有弱共价键性质的金属键.镍在合金中相当分散,这能部分解释由淬冷形成的NiAl₃合金制得的骨架镍催化剂活性增强的原因.     

20Mgβ衰变谱学与15O(α,γ)19Ne反应(英文)

15O（α,γ）19Ne（p,γ）20Na反应链是高温CNO循环向快速质子俘获过程突破的一条关键路径,相关的反应率输入量可通过20Mg的β衰变可布居19Ne共振态并测量其衰变性质来获得。通过高效率高精度地测量20Mg β衰变中产生的质子与γ射线得到了20Mg衰变的详细信息,并构建了完整的衰变纲图,还进行了19Ne 4 033 keV共振态衰变性质的探索,获得了该态在20Mg β衰变中被布居的分支比上限。通过比20Mg和20O镜像能级跃迁的结果确认了同位旋非对称性,为检验相关理论模型提供了精确的实验数据。对于突破路径中有重要影响的19Ne 4 033 keV共振态的性质,有待更高统计的实验进一步研究。The breakout from the hot CNO cycle to the rapid proton capture process can occur via the 15O(α,γ)19Ne(p,γ)20Na reaction sequence, and the β decay of 20Mg can be used as an alternative method to characterize some specific resonances, which will provide detailed nuclear structure input for reaction rate calculations. The reliable information on the decay properties and structure of 20Mg was obtained by measuring the emitted particles and γ-rays in the β decay with high efficiency and high resolution. Attempt was also made to search for the decay channels associated with the 4 033 keV resonance in 19Ne. To test fundamental symmetries, the transitions in the mirror decays of 20Mg and 20O were compared. The precise experimental data presented here would be important to constrain the theoretical calculations. It is desirable to clarify the astrophysically relevant problem by further experiments with improved statistics on the basis of the present work.     

还原氧化石墨烯/TiO2纳米复合物制备及其光催化性能

采用一步水热法制备了还原氧化石墨烯-二氧化钛(RGO-P25)纳米复合物.通过透射电子显微镜(TEM)、傅里叶变换红外(FTIR)光谱、X射线光电子能谱(XPS)、X射线衍射(XRD)及紫外-可见漫反射谱(UVVisDRS)对复合材料的结构和光电性能进行了表征.在紫外光照和可见光照条件下,研究了不同复合比例的复合物的光催化降解甲基蓝(MB)的性能.结果表明:在水热过程中氧化石墨烯被还原,通过静电引力相互作用得到了具有较高缺陷的还原氧化石墨烯复合物.随着RGO含量的增加,复合物的禁带宽度由3.00 eV变到2.27eV,复合物的导电性增强.在可见光和紫外光光照条件下, 30 min内1%(w,质量分数)RGO-P25光催化降解甲基蓝的效率都超过了80%.紫外光照条件下, 1%RGO-P25纳米复合物催化降解N3染料, cis-Ru(H₂dcbpy)₂(NCS)₂ (H₂dcbpy = 4, 4'-二羧酸-2, 2'-联吡啶), 30 min内63%(摩尔分数)的染料被降解.与P25(75%锐钛矿, 25%金红石)相比,石墨烯的加入大大提高了光催化效率,有效抑制了电子-空穴对的复合.     

β-锂霞石低膨胀陶瓷粉体的固相合成

以超细氧化铝、水磨石英和碳酸锂为原料,采用固相法合成了锂铝硅(LAS)系β-锂霞石(LiAlSiO4)低膨胀陶瓷粉体.用TG-DTA研究了β-锂霞石陶瓷粉体的固相合成工艺,找出合适的工艺参数.用XRD、SEM等对样品进行了表征,研究以β-锂霞石为目标晶相的锂铝硅(LAS)三元系统配合料晶相组成随温度的演化过程.结果表明:石英在658℃左右先于氧化铝参与反应形成了偏硅酸锂;石英和氧化铝的引入,使得Li2 CO3由纯物质达到熔点后熔融-逐步分解模式转变为LAS三元系统中迅速、完全地直接分解模式.当温度为1200℃、保温时间120 min时,能完全生成β-锂霞石(LiAlSiO4)陶瓷粉体,其晶相组成随温度的演化次序为:Li2 SiO3 →LixAlxSi1-xO2→α-锂辉石→β-锂辉石→β-锂霞石.     

双频光栅傅里叶变换轮廓术频谱混叠研究

讨论了用双频光栅方法对包含突变成份的物体产生的变形条纹进行傅里叶变换时,可能会出现频谱混叠问题.推出了低频光栅的频谱f1与高频光栅的频谱f2不相互混叠的条件,分析了探测器非线性会引起同一光栅间频谱发生混叠情况.考虑到通常情况下低频光栅频谱f1与高频光栅频谱f2的混叠起主要作用,因此在该情况下用计算机仿真与实验验证了:当f2<2f1时,f1与f2相互混叠,物体面形难以恢复;当f2>2f1时,f1与f2不相互混叠,物体面形恢复得很好.     

Experimental Evidence of Two-Proton Emissions from 18Ne Excited State

Experiment ^18Ne＋^197 Au was performed in Heavy Ion Research Facility Radioactive Ion Beam Line at Lanzhou （RIBLL）. The nuclear energy levels of ^18Ne were built by complete kinematical reconstruction of the decay products and diproton decay were observed from ^18Ne excited states. At 6.15 MeV, the experimental relative momentum and angular correlations of the emitted protons are given. The obvious enhancement at ｜qrol｜= 23 MeV/c and θc.m. = 40° shows the experimental criterion of ^2He cluster decay from ^18Ne^q.     

硫化镓钡合成、生长及性能研究

利用硫过量双温区摇摆炉合成法来稳定合成BaGa4 S7 (BGS)多晶,并用此方法合成出的原料利用坩埚下降法生长BGS单晶.BGS的紫外和红外吸收边分别为350 nm和13.7 μm.在50℃时,它在a-,b-和c-方向的热导率分别为1.34 W/(m·K),1.58 W/(m·K)和1.68 W/(m·K).在1.064 μm、2.1 μm和9.85 μm时,它的激光损伤阈值分别为1.2 J/cm2,7.15 J/cm2和26.2 J/cm2.当泵浦光源在2.2 μm左右变化时,非临界相位匹配OPO输出波长在6～10μm之间.     

Pulsed microwave damage trend of bipolar transistor as a function of pulse parameters

In the present paper we conduct a theoretical study of the thermal accumulation effect of a typical bipolar transistor caused by high power pulsed microwave (HPM), and investigate the thermal accumulation effect as a function of pulse repetition frequency (PRF) and duty cycle. A study of the damage mechanism of the device is carried out from the variation analysis of the distribution of the electric field and the current density. The result shows that the accumulation temperature increases with PRF increasing and the threshold for the transistor is about 2 kHz. The response of the peak temperature induced by the injected single pulses indicates that the falling time is much longer than the rising time. Adopting the fitting method, the relationship between the peak temperature and the time during the rising edge and that between the peak temperature and the time during the falling edge are obtained. Moreover, the accumulation temperature decreases with duty cycle increasing for a certain mean power.