全文获取类型
收费全文 | 70篇 |
免费 | 0篇 |
国内免费 | 1篇 |
专业分类
化学 | 2篇 |
晶体学 | 4篇 |
物理学 | 65篇 |
出版年
2019年 | 2篇 |
2015年 | 3篇 |
2014年 | 1篇 |
2012年 | 2篇 |
2011年 | 1篇 |
2010年 | 3篇 |
2009年 | 2篇 |
2008年 | 3篇 |
2007年 | 3篇 |
2006年 | 2篇 |
2005年 | 6篇 |
2004年 | 2篇 |
2003年 | 7篇 |
2002年 | 1篇 |
2000年 | 1篇 |
1999年 | 2篇 |
1997年 | 1篇 |
1996年 | 4篇 |
1995年 | 2篇 |
1993年 | 3篇 |
1992年 | 1篇 |
1991年 | 1篇 |
1990年 | 1篇 |
1989年 | 4篇 |
1988年 | 2篇 |
1987年 | 1篇 |
1986年 | 5篇 |
1985年 | 1篇 |
1984年 | 1篇 |
1983年 | 2篇 |
1982年 | 1篇 |
排序方式: 共有71条查询结果,搜索用时 0 毫秒
1.
2.
Resonance Raman scattering by exciton polaritons in crystals of CuGaS2 under excitation with the 4880 and 4765 Å lines of an Ar+ laser at 9 K is studied. Lines of one-and two-phonon scattering of excitonic polaritons are found and studied. It is shown that the 1LO and 2LO phonons are arranged in accordance with their energies as the Stokes shifts move farther away from the excitation energy. 相似文献
3.
P.C. Ricci R. Corpino M. Marceddu I.M. Tiginyanu 《Journal of Physics and Chemistry of Solids》2005,66(11):1950-1953
The Silver Gallium Sulfide (AgGaS2) ternary compound is a wide bandgap semiconductor (about 2.7 eV) whose photoluminescence properties are characterized by excitons and donor-acceptor pairs recombinations. We have performed photoluminescence (PL) measurement exciting with the third harmonic (3.5 eV) of a Nd:YAG laser from room temperature down to 10 K at different excitation power. In this work we report the dependence of the ‘green band’ on the excitation power at various temperatures. 相似文献
4.
V. M. Markushev V. V. Ursaki M. V. Ryzhkov C. M. Briskina I. M. Tiginyanu E. V. Rusu A. A. Zakhidov 《Applied physics. B, Lasers and optics》2008,93(1):231-238
A ZnO structure in the form of a core–shell wire was grown with a modified vapour transport and condensation method. The wire
consists of a dense core which may play the role of a waveguide and a shell formed mainly from tetrapod-type crystallites.
The high optical quality of the produced ZnO material is confirmed by continuous wave photoluminescence (PL) analysis demonstrating
that low- temperature PL is related to the recombination of bound excitons, while room-temperature PL is due to free excitons.
Good quality of the crystal structure is demonstrated also by the Raman spectrum. The shell of the wire exhibits room-temperature
laser action due to lasing modes in tetrapods under the excitation by nanosecond laser pulses. The nature of the lasing modes
is discussed. A simplified model for one of the possible modes is suggested. 相似文献
5.
6.
A. Anedda A. Mura F. Raga S. I. Radautsan I. M. Tiginyanu V. A. Ursu 《physica status solidi (a)》1993,139(2):523-529
The influence of fast-electron (E = 3.5 to 4 MeV) irradiation upon photoluminescence (PL) spectra of nominally undoped n-InP epilayers is investigated. The broad PL band with complex structure in the range 1.39 to 1.40 eV is shown to consist of three individual bands with maxima at 1.390, ≈ 1.395, and 1.397 eV (T = 10 K), the first one appearing to be connected with the InP antisite defect. The ≈ 1.395 eV band shifts to high energies with increasing excitation power which is indicative of carrier recombination via donor-acceptor pairs. The band at 1.397 eV as well as the narrow one observed at 1.408 eV are attributed to excitons bound with host defects which anneal at the temperature Tann ≈ 400 °C. 相似文献
7.
Yu. O. Derid E. I. Kozhachenko S. I. Radautsan I. M. Tiginyanu 《physica status solidi (a)》1989,113(2):K265-K266
8.
H. Elhouichet M. Oueslati N. Lorrain S. Langa I. M. Tiginyanu H. Fll 《physica status solidi (a)》2005,202(8):1513-1517
Porous GaP (por‐GaP) samples are doped with terbium ions (Tb3+) by simple impregnation followed by high‐temperature annealing. From scanning electron microscopy (SEM) and energy dispersive X‐ray (EDX) analysis, we show that the por‐GaP skeleton is conserved and the Tb3+ ions are uniformly distributed in the host. The influence of annealing temperature on the luminescence intensity is explored. The photoluminescence (PL) intensity is found to be constant at temperatures lower than 130 K and quenches weakly for temperatures higher than 130 K. A quantitative model for excitation and de‐excitation processes of Tb3+ in por‐GaP based on the recombination of bound excitons to a Tb‐related trap site is proposed that shows good agreement with experimental results. We show that the PL quenching above 130 K can be interpreted in terms of both a back transfer of Tb3+ excitation to the host and a weak thermalization of bound electrons to the conduction band. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) 相似文献
9.
M. Christophersen S. Langa J. Carstensen I. M. Tiginyanu H. Fll 《physica status solidi (a)》2003,197(1):197-203
This paper compares the morphologies of porous silicon and porous III–V compounds and discusses their growth mechanisms. Looking into the fine structure of pores, in silicon (meso)pores with intercalating octahedra are prevalent, while in III–V compounds chains of tetrahedra are observed. The anisotropic properties of pore growth in all materials can be understood considering the role of surface states in the band gap and the anisotropy of the passivation of these states which leads to an “aging” effect of the surface. In III–V compounds, and for the first time in silicon, the strong interaction of pores during their growth has been found. In InP as well as in silicon these interactions lead to self‐induced diameter modulations. To achieve this effect in Si requires the etching conditions to be comparable to those in the III–V compounds. 相似文献
10.
S. Langa M. Christophersen J. Carstensen I. M. Tiginyanu H. Fll 《physica status solidi (a)》2003,197(1):77-82
Self organization is a rather common phenomenon during pore formation in III–V semiconductors. The so called tetrahedron‐like pores, the domains of crystallographically oriented pores in n‐GaAs, or the macroscopic voltage oscillations in n‐InP at high constant current densities are examples of a self organization process. In this paper we will discuss two‐dimensional arrays of pores in n‐InP with the unique property that they may form a single crystal as a result of a self organization process. The reasons for this long range order and its dependence on the etching conditions will be discussed. 相似文献