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1.
研究了HfN/HfO2高K栅结构p型金属-氧化物-半导体(MOS)晶体管(MOSFET)中,负 偏置-温度应力引起的阈值电压不稳定性(NBTI)特征.HfN/HfO2高K栅结构的等效 氧化层厚度(EOT)为1.3nm,内含原生缺陷密度较低.研究表明,由于所制备的HfN/HfO2 高K栅结构具有低的原生缺陷密度,因此在p-MOSFET器件中观察到的NBTI属HfN/HfO2高K栅结构的本征特征,而非工艺缺陷引起的;进一步研究表明,该HfN/HfO2高K栅结构中观察到的NBTI与传统的SiO2基栅介质p-MOSFET器件中观察 到的NBTI具有类似的特征,可以被所谓的反应-扩散(R-D)模型表征: HfN/HfO2 栅结构p-MOSFET器件的NBTI效应的起源可以归为衬底注入空穴诱导的界面反应机理,即在负 偏置和温度应力作用下,从Si衬底注入的空穴诱导了Si衬底界面Si-H键断裂这一化学反应的 发生,并由此产生了Si+陷阱在Si衬底界面的积累和H原子在介质层内部的扩散 ,这种Si+陷阱的界面积累和H原子的扩散导致了器件NBTI效应的发生.
关键词:
高K栅介质
负偏置-温度不稳定性(NBTI)
反应-扩散(R-D)模型 相似文献
2.
Carriers recombination processes in charge trapping memory cell by simulation 总被引:1,自引:0,他引:1 下载免费PDF全文
We have evaluated the effects of recombination processes in a charge storage layer, either between trapped electrons and trapped holes or between trapped carriers and free carriers, on charge trapping memory cell's performances by numerical simulation. Recombination is an indispensable mechanism in charge trapping memory. It helps charge convert process between negative and positive charges in the charge storage layer during charge trapping memory programming/erasing operation. It can affect the speed of programming and erasing operations. 相似文献
3.
采用经典XY模型,阐明了三角格子上层状超薄膜磁性材料的相变和临界现象.并用Monte-Carlo方法对该模型的内部能量、比热、chirality等热力学量进行了计算.使用finite-size scaling 分析法对临界现象的性质进行了论述.通过上述分析和计算,发现该模型在反强磁性层与强磁性层内的chirality在一定范围内随温度的变化急剧增加,这是一种新的chirality相变;而在另一范围内存在Kosterliz-Thouless相变和通常的chirality相变.这种新的chirality相变的
关键词:
层状XY模型
临界现象
Monte-Carlo模拟
磁性薄膜 相似文献
4.
采用固相反应法,将ZnO和Co2O3粉末按不同的成分配比混合,制备了稀磁半导体Zn1-xCoxO (x=0.02,0.06,0.10)材料.并使用H2气氛退火技术对样品进行了处理,得到了具有室温铁磁性的掺Co氧化锌稀磁半导体.利用全自动X射线衍射仪、X射线光电子能谱仪、高分辨透射电子显微镜和超导量子干涉器件磁强计对样品的结构、晶粒的尺寸、微观形貌以及磁性等进行了测量和标度.
关键词:
稀磁半导体
氧化锌
掺杂
固相反应法 相似文献
5.
利用电学测量方法结合二次离子质谱(SIMS)技术对金属Ag和Al与YBa2Cu3O(7-x)(YBCO)超导薄膜接触界面电学性质和互扩散特征进行了测试分析.分析结果显示由于Ag和Al具有不同的化学性质,二者与YBCO界面的互扩散特性有明显不同.这些不同影响到接触界面的电学性质和接触窗口下YBCO的超导性能.在Ag/YBCO样品中,在高于350℃以上的温度下氧气氛中退火将引起Ag和O的界面互扩散,但对YBCO体内O的分布及YBCO的超导性能影响不大,且有利于在界面形成好的电学接触;在Al/YBCO样品中,在高于350℃以上的温度下氧气氛中退火后,界面则主要发生O向Al膜体内的扩散,并在Al和YBCO界面生成一不导电的氧化层,这些将影响到YBCO体内O的分布和接触窗口下的YBCO的超导性能.在合适的退火条件(约500℃氧气氛中)下退火,Ag与YBCO将形成小的接触电阻,利用剥离工艺制备的样品,其界面接触电阻率ρ(ρc=R×A)高于是10(-6)Ωcm2. 相似文献
6.
1989年9月 2日是著名物理学家黄昆教授的70寿辰,为了庆贺他50年来从事教学和科研活动所取得的卓越成就,1990年 1月 4日在北京大学举行了“黄昆教授七十寿辰学术报告会”.北京大学校长吴树青教授和中国科学院院长周光召教授致词祝贺,著名华裔物理学家杨振宁教授专程来京参加会议并作了学术报告.来自中国科学院、机械电子工业部所属研究所和19所高等院校等单位的170多名专家、教授参加了会议,他们之中有黄昆教授的朋友、同事,但绝大多数是黄昆教授的学生.会上宣读了10篇论文,这些论文反映出了我国近年来在半导体物理、晶格动力学方面的研究成… 相似文献
7.
8.
In this paper, we propose a novel Schottky barrier MOSFET structure,
in which the silicide source/drain is designed on the buried metal
(SSDOM). The source/drain region consists of two layers of silicide
materials. Two Schottky barriers are formed between the silicide
layers and the silicon channel. In the device design, the top barrier
is lower and the bottom is higher. The lower top contact barrier is
to provide higher {on-state} current, and the higher bottom contact
barrier to reduce the off-state current. To achieve this, ErSi is
proposed for the top silicide and CoSi2 for the bottom in the
n-channel case. The 50~nm n-channel SSDOM is thus simulated to
analyse the performance of the SSDOM device. In the simulations, the
top contact barrier is 0.2e~V (for ErSi) and the bottom barrier is
0.6eV (for CoSi2. Compared with the corresponding conventional
Schottky barrier MOSFET structures (CSB), the high on-state
current of the SSDOM is maintained, and the off-state current is
efficiently reduced. Thus, the high drive ability (1.2mA/μm
at Vds=1V,
Vgs=2V) and the high Ion/Imin ratio (106)
are both achieved by applying the SSDOM
structure. 相似文献
9.
We investigate phase transitions of the XY model on a two-layer square lattice which consists of a Villain plane (J) and a ferromagnetic plane (I), using Monte Carlo simulations and a histogram method. Depending on the values of interaction parameters (I,J), the system presents three phases: namely, a Kosterlitz-Thouless (KT) phase in which the two planes are critical for I predominant over J, a chiral phase in which the two planes have a chiral order for J predominant over I and a new phase in which only the Villain plane has a chiral order and the ferromagnetic plane is paramagnetic with a small value of chirality. We clarify the nature of phase transitions by using a finite size scaling method. We find three different kinds of transitions according to the values of (I,J): the KT transition, the Ising transition and an XY-Ising transition with ν=0.849(3). It turns out that the Ising or XY-Ising transition is associated with the disappearance of the chiral order in the Villain plane. 相似文献
10.