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81.
This paper studies the tail behavior of the fundamental period in the MAP/G/1 queue. We prove that if the service time distribution
has a regularly varying tail, then the fundamental period distribution in the MAP/G/1 queue has also regularly varying tail,
and vice versa, by finding an explicit expression for the asymptotics of the tail of the fundamental period in terms of the
tail of the service time distribution. Our main result with the matrix analytic proof is a natural extension of the result
in (de Meyer and Teugels, J. Appl. Probab. 17: 802–813, 1980) on the M/G/1 queue where techniques rely heavily on analytic expressions of relevant functions.
I.-S. Wee’s research was supported by the Korea Research Foundation Grant KRF 2003-070-00008. 相似文献
82.
83.
S. H. Faller R. W. Holloway S. C. Lee 《Journal of Radioanalytical and Nuclear Chemistry》1989,137(1):9-16
An investigation of cold fusion of deuterium was performed by electrolyzing heavy water in a cell containing a palladium cathode while monitoring levels of tritium and neutron-capture gamma rays. No activity was detected that would indicate a sustained fusion reaction had taken place. Activities that were observed can be attributed to electrolytic enrichment and a normal cosmic-ray induced background. 相似文献
84.
We investigated that the effect of the number of segregated Li atoms on the rate of oxidation on a LiAl alloy surface. Oxygen molecules adsorbed on the LiAl alloy react with the surface atoms to form stable oxides. The segregated Li atoms at reconstructed surfaces (c(2×2) and (2×1)) enhance the oxidation rate and form stable LiAlOx and Li2O. The degree of enhancement of oxidation by segregated Li atoms varies as a function of O2 exposure and annealing temperature, where the latter is directly related to the mode of surface reconstruction by Li segregation. 相似文献
85.
S.-Y. Lee T.-H. Kim D.-I. Suh E.-K. Suh N.-K. Cho W.-K. Seong S.-K. Lee 《Applied Physics A: Materials Science & Processing》2007,87(4):739-742
We demonstrate GaN nanowire (NW) current rectifiers which were formed by assembling n-GaN nanowires on a patterned p-Si substrate
by means of alternating current (ac) dielectrophoresis. The dielectrophoresis was accomplished at a frequency of 10 kHz with
three different ac bias voltages (5, 10, and 15 Vp–p), indicating that the number of aligned GaN nanowires increased with increasing ac bias voltage. The n-GaN NW/p-Si diodes
showed well-defined current rectifying behavior with a forward voltage drop of 1.2–1.5 V at a current density of 200 A/cm2. We observed that the GaN NW diode functioned well as a half-wave rectifier.
PACS 71.20.Nr; 73.40.Cg; 73.40.Ei; 73.40.Kp 相似文献
86.
Dispersion Compensation in Externally Modulated Transmission System Using Chirped Fiber Grating 总被引:1,自引:0,他引:1
We present an externally modulated NTSC AM-VSB erbium-doped fiber amplifier (EDFA)-repeated system in the 1550 nm region which uses a chirped fiber grating (CFG) as a dispersion compensation device. In contrast to the conventional externally modulated fiber optical CATV systems, either with or without dispersion compensation fiber (DCF), good performances of carrier-to-noise ratio (CNR) ≥50 dB, composite second order (CSO) ≥74 dB, and composite triple beat (CTB) ≥65 dB were achieved for the full channel band after a 100-km single-mode fiber (SMF) transmission. 相似文献
87.
This paper presents the development and laboratory evaluation of a PM10/2.5/1.0 trichotomous sampling inlet that consists of two main parts: a previously designed PM10 size‐selective inlet part and a PM2.5/1.0 two‐stage virtual impactor, which was newly fabricated and attached serially to the PM10 size selective inlet part. Particles are collected in three locations through the trichotomous sampling inlet to provide for not only particle concentration measurements of PM10, PM2.5 and PM1.0, but also those of PM2.5–10 and PM1.0–2.5. 相似文献
88.
H-J Kim D-H Lee P Xirouchakis 《The Journal of the Operational Research Society》2006,57(10):1231-1240
This paper considers the problem of determining the disassembly schedule (quantity and timing) of products in order to satisfy the demand of their parts or components over a finite planning horizon. The objective is to minimize the sum of set-up, disassembly operation, and inventory holding costs. As an extension of the uncapacitated versions of the problem, we consider the resource capacity restrictions over the planning horizon. An integer program is suggested to describe the problem mathematically, and to solve the problem, a heuristic is developed using a Lagrangean relaxation technique together with a method to find a good feasible solution while considering the trade-offs among different costs. The effectiveness of the algorithm is tested on a number of randomly generated problems and the test results show that the heuristic suggested in this paper can give near optimal solutions within a short amount of computation time. 相似文献
89.
We have performed total-energy calculations to study theoretical scanning tunneling microscopy (STM) images of the Si(1 1 1)3 × 2 surfaces induced by the adsorption of alkaline-earth metals (AEMs). Previously, in a series of works on Ba/Si(1 1 1) system, we have found that the observed Si(1 1 1)3 × 1-Ba LEED phase indeed has a 3 × 2 periodicity with a Ba coverage of 1/6 ML and the HCC substrate structure. Based on results of the Ba case, we proposed that the HCC structure is also adopted for other AEM atoms, which was confirmed by our recent work. In this paper, we mainly report the STM simulations for different AEM systems to compare with existing experimental data. We discuss the difference in the detailed STM images for different AEM adsorbates. Especially, the difference in filled-state images between Mg and other AEM atoms is attributed to the strong Mg-Si interaction. 相似文献
90.
B.-K. Kim H. Oh E.-K. Jeon S.-R. Kim J.-R. Kim J.-J. Kim J.-O. Lee C.J. Lee 《Applied Physics A: Materials Science & Processing》2006,85(3):255-263
This paper presents a review of our current experimental research on GaP nanowires grown by a vapor deposition method. Their structural, electrical, opto-electric transport, and gas-adsorption properties are reviewed. Our structural studies showed that a GaP nanowire consisted of a core–shell structure with a single-crystalline GaP core and an outer Ga2O3 layer. The individual GaP nanowires exhibited n-type field effects. Their electron mobilities were in the range of about 6 to 22 cm2/V s at room temperature. When the nanowires were illuminated with an ultraviolet light source, an abrupt increase of conductance occurred resulting from carrier generation in the nanowire and de-adsorption of adsorbed OH- or O2
- ions on the Ga2O3 surface shell. Using an intrinsic Ga2O3 shell layer as a gate dielectric, top-gated GaP nanowire field-effect transistors were fabricated and characterized. Like other metal oxide nanowires, the carrier concentration and mobility of GaP nanowires were significantly affected by the surface molecular adsorption of OH or O2. The GaP nanowire devices were fabricated as sensors for NO2, NH3, and H2 gases by using a simple metal decoration technique. PACS 73.63.-b; 72.80.Ey; 85.35.-p 相似文献