极小孔半导体激光器近场区光场分布研究

利用时域有限差分法(FDTD)计算和分析了极小孔半导体激光器输出光端面附近的光场分布,指出小孔激光器近场区域光场分布的特点,讨论了小孔大小和金属厚度对光场分布和光源分辨率的影响,得到设计和制备极小孔半导体激光器的优化方法.     

荧光光纤温度传感器激励光源的选择

本文分析计算了荧光光纤温度传感器的温敏元件——GsAlAs/GaAs双异质结半导体材料的荧光辐射效率与激励光波长的关系。讨论了温度测量范围及温敏元件GaAlAs层铝含量对激励光源的限制,在0～200℃测温范围内,若采用LED作激励光源,其峰值波长应在0.70～0.76μm之间选择。     

Preparation of Fe–Si–B–Nb amorphous powder cores with excellent high-frequency magnetic properties

FeSiBNb amorphous powder cores were prepared with the amorphous powder by gas atomization and subsequent hot pressing of resulting powder after creating oxide layers on the amorphous powder. Fully amorphous FeSiBNb powders with good soft magnetic properties were successfully obtained in the particle size range below 100 μm. FeSiBNb amorphous powder cores exhibit stable permeability up to 10 MHz, showing excellent high-frequency characteristics.     

完备图分拆为带一条弦的(2k-1)-长圈

本文给出了构造G-设计的一个统一方法及当v≡1(mod 4k)时的C_(2k-1)~((r))-GD(v)的存在性,其中C_(10)~((r)),1≤r≤k-2表示带一条弦的2k-1长圈,r表示弦两个端点间的顶点个数。     

大非线性相移下光学非线性Z扫描特性的研究

采用高斯分解法(GD)对大非线性相移下的Z扫描特性进行了分析，通过对数值算法的优化，将GD推广到对脉冲入射激光下大非线性相移下的Z扫描理论分析.对不同条件下大非线性相移Z扫描曲线峰谷结构的比较，发现在大非线性相移的情况下，Z扫描曲线的峰和谷随透过光阑或入射光强变化表现出某些新的特性.随着透过光阑孔径的增加，Z扫描曲线峰的变化要明显快于谷的变化，而且在谷明显存在的情况下，峰很快消失.采用皮秒脉冲激光下的纯二硫化碳实验对理论结果加以验证，实验结果和理论分析相一致.我们的分析结果对大非线性相移下Z扫描测量有一定的指导性意义，避免在大非线性相移下对Z扫描结果产生错误的分析. 关键词： 大非线性相移 高斯分解法 Z扫描     

Effects of the architecture and environment on polymeric molecular assemblies of novel amphiphilic diblock copolynorbornenes with narrow polydispersity via living ring‐opening metathesis polymerization

Diblock copolymers of 5‐(methylphthalimide)bicyclo[2.2.1]hept‐2‐ene (NBMPI) and 1,5‐cyclooctadiene were synthesized by living ring‐opening metathesis polymerization with a well‐defined catalyst {RuCl₂(CHPh)[P(C₆H₁₁)₃]₂}. Unhydrogenated diblock copolymers showed two glass transitions due to poly(NBMPI) and polybutadiene segments, such as two glass‐transition temperatures at ?86.5 and 115.3 °C for poly 1a and ?87.2 and 115.3 °C for poly 1b . However, only one melting temperature could be observed for hydrogenated copolymers, such as 119.8 °C for poly 2a and 121.7 °C for poly 2b . The unhydrogenated diblock copolymer with the longer poly(NBMPI) chain (poly 1a ; temperature at 10% mass loss = 400 °C) exhibited better thermal stability than the one with the shorter poly(NBMPI) chain (poly 1b ; temperature at 10% mass loss = 385 °C). Two kinds of hydrogenated diblock copolymers, poly 2a and poly 2b , exhibited relatively poor solubility but better thermal stability than unhydrogenated diblock copolymers because of the polyethylene segments. Poly[(hydrochloride quaternized 2‐norbornene‐5‐methyleneamine)‐b‐butadiene]‐1 (poly 3a ) was obtained after the hydrolysis and quaternization of poly 1a . Dynamic light scattering measurements indicated that the hydrodynamic diameters of the cationic copolymer (poly 3a ) in water (hydrodynamic diameter = 1580 nm without salt), methanol/water (4/96 v/v; hydrodynamic diameter = 1500 nm without salt), and tetrahydrofuran/water (4/96 v/v; hydrodynamic diameter = 1200 nm without salt) decreased with increasing salt (NaCl) concentration. The effect of temperature on the hydrodynamic diameter of hydrophobically modified poly 3a was also studied. The inflection point of the hydrodynamic diameter of poly 3a was observed at various polymer concentrations around 30 °C. The critical micelle concentration of hydrophobically modified poly 3a was observed at 0.018 g dL^?1. © 2006 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 44: 2901–2911, 2006     

Local chemical distribution and electronic structure of Ge1−xTx DMS single crystals (T=Cr,Mn, Fe)

The spatial concentration distribution and local electronic structure of ferromagnetic Ge_1−xT_x (T=Cr, Mn, Fe) DMS single crystals have been investigated by using scanning photoelectron microscopy (SPEM), X-ray absorption spectroscopy (XAS), and photoemission spectroscopy (PES). It is found that doped T ions in Ge_1−xT_x crystals are chemically phase-separated, suggesting that the observed ferromagnetism arises from the phase-separated T-rich phases in Ge_1−xT_x.     

Discrete-time GI/Geo/1 queue with multiple working vacations

Consider the discrete time GI/Geo/1 queue with working vacations under EAS and LAS schemes. The server takes the original work at the lower rate rather than completely stopping during the vacation period. Using the matrix-geometric solution method, we obtain the steady-state distribution of the number of customers in the system and present the stochastic decomposition property of the queue length. Furthermore, we find and verify the closed property of conditional probability for negative binomial distributions. Using such property, we obtain the specific expression for the steady-state distribution of the waiting time and explain its two conditional stochastic decomposition structures. Finally, two special models are presented.      

Reconstruction of Elastic Inclusions of Small Volume via Dynamic Measurements

We consider the inverse problem of identifying locations and certain properties of the shapes of small elastic inclusions in a homogeneous background medium from dynamic boundary measurements for a finite interval in time. Using particular background solutions as weights, we present an asymptotic method based on appropriate averaging of the dynamic boundary measurements and propose non-iterative algorithms for solving our inverse problem.     

具有HfN/HfO2栅结构的p型MOSFET中的负偏置-温度不稳定性研究

研究了HfN/HfO₂高K栅结构p型金属-氧化物-半导体(MOS)晶体管(MOSFET)中，负 偏置-温度应力引起的阈值电压不稳定性(NBTI)特征.HfN/HfO₂高K栅结构的等效 氧化层厚度(EOT)为1.3nm，内含原生缺陷密度较低.研究表明，由于所制备的HfN/HfO₂ 高K栅结构具有低的原生缺陷密度，因此在p-MOSFET器件中观察到的NBTI属HfN/HfO2高K栅结构的本征特征，而非工艺缺陷引起的；进一步研究表明，该HfN/HfO₂高K栅结构中观察到的NBTI与传统的SiO₂基栅介质p-MOSFET器件中观察 到的NBTI具有类似的特征，可以被所谓的反应-扩散(R-D)模型表征： HfN/HfO₂ 栅结构p-MOSFET器件的NBTI效应的起源可以归为衬底注入空穴诱导的界面反应机理，即在负 偏置和温度应力作用下，从Si衬底注入的空穴诱导了Si衬底界面Si-H键断裂这一化学反应的 发生，并由此产生了Si^＋陷阱在Si衬底界面的积累和H原子在介质层内部的扩散 ，这种Si^＋陷阱的界面积累和H原子的扩散导致了器件NBTI效应的发生. 关键词： 高K栅介质 负偏置-温度不稳定性(NBTI) 反应-扩散(R-D)模型