关于低阶K群的若干问题

本文主要介绍了低阶Ｋ群Ｋ＿０，Ｋ＿１，Ｋ＿２及与它们相关的Ｂａｓｓ－Ｑｕｉｌｌｅｎ猜测、Ｂｉｒｃｈ－Ｔａｔｅ猜测研究的最新进展．Ｋ＿０与Ｋ＿１方面主要通过对Ｂａｓｓ～Ｑｕｉｌｌｅｎ猜测研究说明Ｋ＿０，Ｋ＿１的作用，同时也给出了一些多项式环上投射模自同构群的计算公式．在Ｋ＿２群方面，我们主要介绍了域上Ｋ＿２群，代数整数环上Ｋ＿２群以及著名的Ｂｉｒｃｈ－Ｔａｔｅ猜想．并且也给出了Ｋ＿２群一些计算方面的结果．     

关于Abel群上Cayley图的Hamilton圈分解

设Ｇ（Ｆ，Ｔ∩Ｔ＾－１）是有限Ａｂｅｌ群Ｆ上的Ｃａｙｌｅｙ图，Ｔ∩Ｔ＾－１只含２阶元，此文证明了当Ｔ是Ｆ的极小生成元集时，若ｄ（Ｇ）＝２ｋ，则Ｇ是ｋ个边不相交的Ｈａｍｉｌｔｏｎ圈的并，若ｄ（Ｇ）＝２ｋ＋１，则Ｇ是ｋ个边不相交的Ｈａｍｉｌｔｏｎ圈与一个１－因子的并。     

A law of the iterated logarithm for processes with independent increments

ＡＬＡＷＯＦＴＨＥＩＴＥＲＡＴＥＤＬＯＧＡＲＩＴＨＭＦＯＲＰＲＯＣＥＳＳＥＳＷＩＴＨＩＮＤＥＰＥＮＤＥＮＴＩＮＣＲＥＭＥＮＴＳＷＡＮＧＪＩＡＧＡＮＧ（汪嘉冈）（ＥａｓｔＣｈｉｎａＵｎｉｖｅｒｓｉｔｙｏｆＳｃｉｅｎｃｅ＆Ｔｅｃｈｎｏｌｏｇｙ,Ｓｈａｎｇ...     

Refining the Diffusion Approximation for the <Emphasis Type="Italic">GI</Emphasis><Superscript><Emphasis Type="Italic">x</Emphasis></Superscript><Emphasis Type="Italic">/G/c</Emphasis> Queue

This paper deals with the GI ^x /G/c queueing system in a steady state. We refine a diffusion approximation method incorporating the constraint of traffic conservation for general queueing systems. An approximate expression for the distribution of the number of customers is obtained. Numerical results are presented to show that the refined model provides improved performance.     

On R*-sequenceability and symmetric harmoniousness of groups

We introduce a special harmoniousness called symmetric harmoniousness of groups and extend the R^*-sequenceability of abelian groups to nonabelian groups. We prove that the direct product of an R^*-sequenceable group of even order with a symmetric harmonious group of odd order is R^*-sequenceable. Examples of nonabelian R^*-sequenceable groups and nonabelian symmetric harmonious groups are given. It is shown that the nonabelian groups of order 3q (q prime) are symmetric harmonious. © 1994 John Wiley & Sons, Inc.     

四阶和一般偶数阶奇异边值问题正解的存在性

在本文中得到了四阶和一般偶数阶非线性方程奇异边值问题正解的存在性。从而推广了［１］［２］中的结果。     

Polarimetric-Spectral-Sensitive Compressed Ultrafast Photography Enables Real-Time Intensity Visualization of Time-Varying Polarized Ultrafast Laser Pulses

Ultrafast laser pulses with complex spatiotemporal and polarization couplings have shown great application prospects in coherent control, particle acceleration, molecular dynamics excitation, and chiral or anisotropic detection. It is very important to observe the polarization-coupled ultrafast laser pulses for characterizing the performance of laser source and understanding the laser-matter interaction, but there is currently no detection technique that can completely characterize them, including the spatio-, spectral-, and polarimetric-temporal information. In this work, a polarimetric-spectral-sensitive has been compressed ultrafast photography (PS-CUP) to realize the real-time intensity visualization of time-varying polarized (TP) ultrafast laser pulses. PS-CUP can not only distinguish the polarization state of a TP pulse, but also realize the spatio-, spectral- and polarimetric-temporal measurement. To demonstrate the ability of polarization resolving detection, PS-CUP is used to successfully distinguish between the sinistral and dextral TP pulses and measure the angle and degree of linear polarization of a dextral TP pulse, respectively, and the experimental results are highly consistent with theoretical simulations. Owing to the unprecedented multidimensional detection ability, PS-CUP is prospected to provide a powerful tool for the diagnosis of various complex ultrafast laser pulses and the detection of ultrafast chiral optics.     

Enhanced Terahertz Phonon Polariton in Lithium Niobate Chip

Terahertz (THz) phonon polaritons, fundamental quasi-particles that couple lattice vibrations with electromagnetic fields at THz frequencies, are found in a variety of materials that offer the potential for a wide range of THz optoelectronic devices and on-chip integrated systems. However, these compact devices and on-chip systems are hampered by the absence of on-chip powerful THz phonon polariton sources. In this study, the efficient generation and amplification of THz phonon polaritons are proposed and directly visualized on a lithium niobate (LN) chip via a tilted pulsefront phase matching technique. By combining lateral pumping and phase matching schemes, two orders of magnitude are successfully attained in the interaction distance between the pump light and the LN chip, accompanied by a substantial amplification of generated THz phonon polariton. The results of this study may lead to abundant potential applications in chip scale THz photonic devices and systems based on LN materials and its integrated heterostructures.     

Effect of mechanical force on domain switching in BiFeO_3 ultrathin films

Ferroelectric polarization can be switched by an external applied electric field and may also be reversed by a mechanical force via flexoelectricity from the strain gradient.In this study,we report the mechanical writing of an epitaxial BiFeO3(BFO)thin film and the combined action of an applied mechanical force and electric field on domain switching,where the mechanical force and electric field are applied using the tip of atomic force microscopy.When the applied force exceeds the threshold value,the upward polarization of the BFO thin film can be reversed by pure mechanical force via flexoelectricity;when an electric field is simultaneously applied,the mechanical force can reduce the coercive electric field because both the piezoelectricity from the homogeneous strain and the flexoelectricity from strain gradient contribute to the internal electric field in the film.The mechanically switched domains exhibit a slightly lower surface potential when compared with that exhibited by the electrically switched domains due to no charge injection in the mechanical method.Furthermore,both the mechanically and electrically switched domains exhibit a tunneling electroresistance in the BFO ferroelectric tunnel junction.     

Effect of defects on the electronic structure of a PbI2/MoS2 van der Waals heterostructure: A first-principles study

PbI2/MoS2,as a typical van der Waals(vdW)heterostructure,has attracted intensive attention owing to its remarkable electronic and optoelectronic properties.In this work,the effect of defects on the electronic structures of a PbI2/MoS2 heterointerface has been systematically investigated.The manner in which the defects modulate the band structure of PbI2/MoS2,including the band gap,band edge,band alignment,and defect energy-level density within the band gap is discussed herein.It is shown that sulfur defects tune the band gaps,iodine defects shift the positions of the band edge and Fermi level,and lead defects realize the conversions between the straddling-gap band alignment and valence-band-aligned gap,thus enhancing the light-absorption ability of the material.