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991.
In this Letter, structural properties of liquid Ni20Al80 have been studied through molecular dynamics (MD) simulations, and results agree well with X-ray experiments. The prepeak in the structure factor manifests the existence of medium-range structural order (MRSO) in liquid Ni20Al80. Analyses in MRSO reveal the dominance of ideal icosahedra and defective icosahedra which, furthermore, form clusters and share common atoms.  相似文献   
992.
993.
994.
The multiple-state storage capability of phase change memory (PCM) is confirmed by using stacked chalcogenide films as the storage medium. The current-voltage characteristics and the resistance-current characteristics of the PCM clearly indicate that four states can be stored in this stacked film structure. Qualitative analysis indicates that the multiple-state storage capability of this stacked film structure is due to successive crystallizations in different Si-Sb-Te layers triggered by different amplitude currents.  相似文献   
995.
An enantioselective Michael addition of malonate to nitroalkenes is efficiently catalyzed by low loading demethylquinine salts in water; the yield range from 49% to 93% and the ee up to 90%.  相似文献   
996.
IntroductionAdenosine 3′,5′-cyclic monophosphate (cAMP)and guanosine 3′,5′-cyclic monophosphate(cGMP) areubiquitous second messengers that mediate biologicalresponses to a variety of extracellular cues, includinghormones, neurotransmitters, chemokines…  相似文献   
997.
A method of heat-assisted magnetic recording (HAMR) potentially suitable for probe-based storage systems is characterized. In this work, field emission current from a scanning tunneling microscope (STM) tip is used as the heating source. Pulse voltages of 2–7 V were applied to a CoNi/Pt multilayered film fabricated on either bare silicon or oxidized silicon substrates. Different types of Ir/Pt and W STM tips were used in the experiment. The results show that thermally recorded magnetic marks are formed with a nearly uniform mark size of 170 nm on the film fabricated on bare silicon substrate when the pulse voltage is above a threshold voltage. The mark size becomes 260 nm when they are written on the identical film fabricated on an oxidized silicon substrate. The threshold voltage depends on the material work function of the tip, with W having a threshold voltage about 1 V lower than Pt. A synthesized model, which contains the calculation of the emission current, the simulation of heat transfer during heating, and the study of magnetic domain formation, was introduced to explain experimental results. The simulation agrees well with the experiments.  相似文献   
998.
We report the effects of post-thermal treatment on the quality of 2-inch 6H-SiC wafer cut from a crystal boule grown by physical vapour transportation method. The full widths at half maximum of x-ray diffraction rocking curves measured on sites across the 2-inch wafer become narrower, indicating the quality improvement after a three-step post-thermal treatment. It is found that the most common defects such as micropipes and inclusions can be significantly reduced after the treatment. Our results show that the post-thermal treatment is an effective route to improve the quality of SiC single crystals.  相似文献   
999.
A modulation frequency multiplexed dual diode-laser system is developed for simultaneous detection of the two most common fire gas products CO and CO2. Simultaneous detection is achieved by modulating each laser at different frequencies, demodulating the signal by a pair of lock-in amplifiers for each gas. Laser beams are combined and detected by one detector after passing through an identical optical path. The experimental results show little performance degradation associated with modulation frequency multiplexing, and no cross-talk between the two multiplexed detection channels is measured.  相似文献   
1000.
As the ITER first wall Be/CuCrZr hot isostatic pressing (HIP) bonding intermediate transition layer, Ti/Cu layer can form a multi-layer intermediate metal phase, and defects such as cracks occur between the Ti/Cu metal phases. CuCrZr was used instead of Be, and a number of CuCrZr/Ti/Cu/CuCrZr joints were fabricated by the same HIP process as Be/CuCrZr to analyze the Ti/Cu joints. The effects of stress relief annealing on joint strength and defect distribution of the joints unannealed, annealed at 400°C and 500°C respectively were studied. The results show that three layers of Ti/Cu diffusion layers are formed on both sides of the intermediate titanium layer, namely Cu4Ti, CuTi and CuTi2. The thickness of Cu4Ti on the pure copper side is thicker than that on the CuCrZr side, so that the crack is almost entirely distributed at the junction of Cu4Ti and CuTi on the pure copper side where brittle fracture is easy to occur in the tensile samples. As the annealing temperature increases, the generation and propagation of cracks decreases.  相似文献   
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