基于新型长周期光纤光栅的掺铒光纤放大器

报道了基于高频CO₂激光脉冲写入的新型长周期光纤光栅的低噪音掺铒光纤放大器,这种新型长周期光纤光栅是用大约几千Hz的高频CO₂激光脉冲对光纤玻璃热冲击作用而形成的.在铒纤中插入一个长周期光纤光栅,会明显减少掺铒光纤放大器的放大自发辐射(ASE)噪音.报道了两种低噪音掺铒光纤放大器,作为前置放大器和线路放大器,它们的ASE噪音指数分别从4.0 dB减少到3.5 dB和从4.8 dB减少到4.3 dB,并且在作为线放时,其小信号增益从30 dB提高到37 dB,降噪及提高增益效应十分显著.     

高气压反射式高能电子衍射仪监控脉冲激光外延氧化物薄膜

在超高真空分子束外延（MBE）生长技术中，反射式高能电子衍射仪（RHEED）能实时显示半导体和金属外延生长过程，给出薄膜表面结构和平整度的信息，成为MBE必备的原位表面分 析仪.为了研究氧化物薄膜如高温超导（YBa₂Cu₃O₇） 、铁电薄膜（Sr_1-xBa_x TiO₃）及它们的同质和异质外延结构的生长机理，获得高质量的符合各种应用 需要的氧化 物多层薄膜结构，在常规的制备氧化 关键词： 高温超导薄膜 RHEED     

Crystal Structure of Adduct 2-Phenyl-imidazo [ 4,5-f ] 1,10-phenanthroline Methanol

The structure of the title adduct comprises a phenanthroline derivative 2-phenyl-imidazo[4,5-f]1,10-phenanthroline and a methanol.The composition of the crystalline adduct was characterized as C19H12N4.CH3OH.It belongs to orthorhombic system,space group Pna21 with a=1.3693(4)nm,b=2.2988(7)nm,c=0.51338(15)nm,V=1.6160(8)nm^3.Z=4,and final R1=0.0423.wR2=0.1012 .Crystal structure shows that all the 19 carbon atoms and 4 nitrogen atoms are coplanar.The bond length data indicated that a very extensive conjugation system was formed.This conjugation makes the compound being a potentially excellent energy transformer used for luminescent materials.     

Liminf results on the increments of an (N,d)-Gaussian process

We establish some liminf theorems on the increments of a (N,d)-Gaussian process with the usual Euclidean norm, via estimating upper bounds of large deviation probabilities on the suprema of the (N,d)-Gaussian process. This revised version was published online in June 2006 with corrections to the Cover Date.     

Bi12TiO20纳米粉体的制备及其光吸收特性研究

以钛酸四丁酯和硝酸铋为原料 ,利用化学溶液分解法制备了Bi12 TiO2 0 纳米多晶粉体 .采用XRD和TEM对其结构和形貌进行了表征 .结合热重 差热 (TG DTA)分析 ,探讨了Bi12 TiO2 0 晶相的形成机理 .通过UV Vis漫反射谱的测定 ,研究了Bi12 TiO2 0 纳米晶粉体的光吸收特性 .结果显示 ,从组成为化学计量比的前驱液中可以很容易制得纯Bi12 TiO2 0 纳米晶粉体 ,该Bi12 TiO2 0 纳米晶粉体呈现了在很宽的波长范围内 (5 6 0～ 385nm )对光的吸收的特性 .     

Study of the pulsed laser vapor doping of Si(1 0 0) with KrF excimer laser and BCl3 gas

The properties of pulsed laser vapor doping on p-Si(1 0 0) with a KrF (248 nm) excimer pulsed laser (248 nm) and BCl₃ gas are reported in this paper. The doped samples are characterized by the resistance measured using a four-probe method, since the sheet resistance changes with the carrier concentration of the sample. The doping effects with the variation of laser energy density, pulse number, and the pressure of BCl₃ were investigated in terms of the sheet resistance. In this way, the optimized parameters were obtained and used for the positive heavy doping on p-Si(1 0 0) and p-Si(1 1 1). Then, using a square mesh under the above conditions, an image doping was completed. Finally, the metal–semiconductor Ohmic contacts were realized by plating Ag and Cu films on the doped surface.     

电子储存环中插入元件的非线性束流动力学的Lie代数方法

介绍了用能保证哈密顿系统“辛”性质的Lie映射方法来研究电子储存环中的插入元件对束流动力学的影响.并以此方法对合肥光源中将要安装的波荡器UD?–?1对储存环的影响作了初步的研究     

高压沿面放电烟气脱硫技术动态实验研究

本文针对高压沿面放电活化气体的烟气脱硫技术,在静态实验研究的基础上进行了实验室冷态动态的实验研究。设计了便于反应和测量的动态实验装置。实验解释了电子束法脱硫技术中导致氨气泄漏的部分原因,验证了高压沿面放电脱硫技术可以在较低的运行电压下,达到提高脱硫效率,减少氨气泄漏的作用。     

Peritectic phase growth in directionally solidified Cu-70% Sn alloy

The growth mechanism of the peritectic η phase involving the peritectic reaction and peritectic transformation in Cu-70%Sn alloy was investigated under directional solidification. The results show that a major growth mechanism in thickening of the peritectic η-layer is not the peritectic reaction but the peritectic transformation. The transformation temperature and isothermal time play crucial roles in determining the volume fraction and the thickness of the peritectic η phase. With the increase of the temperature and isothermal time, the volume fraction of the peritectic η phase increases. The regressed data show that the relationship between the thickness of η phase (Δx) and the transformation temperature (T) meets the following equation In Δx=6.5−1673 1 / T. Additionally, there exists a relationship between the thickness of the η phase (Δx) and the isothermal time (t) at the 9 mm solidification distance below the peritectic reaction interface, Δx=0.72t ^1/2, which is consistent with the theoretical model. Supported by the National Science Foundation of China (Grant No. 50395102)     

Simulation of Vacuum Microelectronic Triode Made of Single Carbon Nanotube

Vacuum microelectronic triode performance, based upon a unit cell with a nanotube field emitter, gate, and anode, was evaluated via computer simulation. Electron emission was calculated from the modified Fowler-Nordheim equation. The dependence of emitted current, upon geometrical factors, e.g., nanotube radius, nanotube height, and gate's hole radius, is shown. The device design parameters of trans-conductance, and cutoff frequency have been calculated, which show that this structure can be used as a microwave and millimeter wave amplifier. Electron current flux is shown for time-dependent 1–Thz sinusoidal variation frequency input.