Near- and mid-infrared spectroscopy of sol–gel derived ormosils: vinyl and phenyl silicates

The suitability of ormosils as photonic materials was investigated. Vinyl and phenyl silicates were synthesised below 100°C. A detailed assignment of mid-infrared vibrational absorption bands is given. This allowed assignment of overtone and combination bands in the near-infrared region and an assessment of residual water contamination, which is low and can be expelled by evacuation. These ormosils have low intrinsic and extrinsic optical absorption in the visible spectral region and at useful wavelengths in the near-infrared.     

Conversion of furans into gamma-hydroxybutenolides: use of sodium chlorite

3,4-disubstituted furans are converted into gamma-hydroxy-butenolides by treatment with NaClO(2) in aqueous EtOH containing NaH(2)PO(4).     

Spanning Trails Connecting Given Edges

Suppose that is the set of connected graphs such that a graph G if and only if G satisfies both (F1) if X is an edge cut of G with |X|3, then there exists a vertex v of degree |X| such that X consists of all the edges incident with v in G, and (F2) for every v of degree 3, v lies in a k-cycle of G, where 2k3.In this paper, we show that if G and (G)3, then for every pair of edges e,fE(G), G has a trail with initial edge e and final edge f which contains all vertices of G. This result extends several former results.     

High quality InAlN/GaN heterostructures grown on sapphire by pulsed metal organic chemical vapor deposition

High quality InAlN/GaN heterostructures are successfully grown on the (0 0 0 1) sapphire substrate by pulsed metal organic chemical vapor deposition. The InAlN barrier layer with an indium composition of 17% is observed to be nearly lattice matched to GaN layer, and a smooth surface morphology can be obtained with root mean square roughness of 0.3 nm and without indium droplets and phase separation. The 50 mm InAlN/GaN heterostructure wafer exhibits a mobility of 1402 cm²/V s with a sheet carrier density of 2.01×10¹³  cm^?2, and a low average sheet resistance of 234 Ω/cm² with a sheet resistance nonuniformity of 1.22%. Compared with the conventional continual growth method, PMOCVD reduces the growth temperature of the InAlN layer and the Al related prereaction in the gas phase, and consequently enhances the surface migration, and improves the crystallization quality. Furthermore, indium concentration of InAlN layer can be controlled by adjusting the pulse time ratio of TMIn to TMAl in a unit cycle, the growth temperature and pressure, as well as the InAlN layer thickness by the number of unit cycle repeats.     

向内发射磁绝缘振荡器

提出了一种向内发射磁绝缘振荡器,并给出了微波轴向提取的方法。这种新型结构通过外置阴极、内置阳极,使参与束波作用的轮辐电流通过阳极回流提供了自磁绝缘的角向磁场,有提高器件效率的可能。而外置阴极使阴极的发射面积增大,发射电流密度减小,有利于延长阴极寿命。通过粒子模拟,得到了几何参数与磁绝缘线振荡器输出功率的关系。在电压890 kV,电流56.1 kA下,输出功率为3.6 GW,频率为8.2GHz。     

A Classification of Horizontally Homothetic Submersions from Space Forms of Nonnegative Curvature

In this paper, it is proved that for n 2, any horizontallyhomothetic submersion : Rⁿ⁺¹ (Nⁿ, h) is a Riemannian submersionup to a homothety. It is also shown that if : Sⁿ⁺¹ (Nⁿ, h)is a horizontally homothetic submersion, then n = 2m, (Nⁿ, h)is isometric to CP^m and, up to a homothety, is a standard Hopffibration S^2m+1 CP^m. 2000 Mathematics Subject Classification53C20, 53C12.     

High frequency characteristics of NiO/(FeCo/NiO)10 multilayers with exchange anisotropy

[NiO/Fe₆₅Co₃₅]₁₀ exchange-coupled multilayer films for high frequency applications are fabricated, and their static magnetic property and microwave permeability are studied systematically. Both exchange bias field and ferromagnetic resonance frequency of the multilayers increase with decreasing Fe₆₅Co₃₅ thickness, which means that the microwave properties such as permeability and FMR frequency can be controlled by changing Fe₆₅Co₃₅ thickness in the exchange-coupled films. Ferromagnetic resonance frequencies beyond 7 GHz of the films are measured and reported for the first time.     

Ultra-low-loss inverted taper coupler for silicon-on-insulator ridge waveguide

An ultra-low-loss coupler for interfacing a silicon-on-insulator ridge waveguide and a single-mode fiber in both polarizations is presented. The inverted taper coupler, embedded in a polymer waveguide, is optimized for both the transverse-magnetic and transverse-electric modes through tapering the width of the silicon-on-insulator waveguide from 450 nm down to less than 15 nm applying a thermal oxidation process. Two inverted taper couplers are integrated with a 3-mm long silicon-on-insulator ridge waveguide in the fabricated sample. The measured coupling losses of the inverted taper coupler for transverse-magnetic and transverse-electric modes are ∼ 0.36 dB and ∼ 0.66 dB per connection, respectively.     

Multifold enhancement of quantum dot luminescence in plasmonic metamaterials

We report that hybridizing semiconductor quantum dots with plasmonic metamaterial leads to a multifold intensity increase and narrowing of their photoluminescence spectrum. The luminescence enhancement is a clear manifestation of the cavity quantum electrodynamics Purcell effect and can be controlled by the metamaterial's design. This observation is an essential step towards understanding loss compensation in plasmonic metamaterials with gain media and for developing metamaterial-enhanced gain media.     

Classification of solutions for an integral equation

Let n be a positive integer and let 0 < α < n. Consider the integral equation We prove that every positive regular solution u(x) is radially symmetric and monotone about some point and therefore assumes the form with some constant c = c(n, α) and for some t > 0 and x₀ ? ?ⁿ. This solves an open problem posed by Lieb 12 . The technique we use is the method of moving planes in an integral form, which is quite different from those for differential equations. From the point of view of general methodology, this is another interesting part of the paper. Moreover, we show that the family of well‐known semilinear partial differential equations is equivalent to our integral equation (0.1), and we thus classify all the solutions of the PDEs. © 2005 Wiley Periodicals, Inc.