Realisation and metrological characterisation of thickness standards below 100 nm

High-accuracy film thickness measurements in the range below 100 nm can be made by various complex methods like spectral ellipsometry (SE), scanning force microscopy (SFM), grazing incidence X-ray reflectometry (GIXR), or X-ray fluorescence analysis (XRF). The measurement results achieved with these methods are based on different interactions between the film and the probe. A key question in nanotechnology is how to achieve consistent results on a level of uncertainty below one nanometre with different techniques.Two different types of thickness standards are realised. Metal film standards for X-ray techniques in the thickness range 10 to 50 nm are calibrated by GIXR with monochromatised synchrotron radiation of 8048 eV. The results obtained at four different facilities show excellent agreement. SiO₂ on Si standards for SE and SFM in the thickness range 6 to 1000 nm are calibrated by GIXR with monochromatised synchrotron radiation of 1841 eV and with a metrological SFM. Consistent results within the combined uncertainties are obtained with the two methods. Surfaces and interfaces of both types of standards are additionally investigated by transmission electron microscopy (TEM). PACS 61.10.Kw; 68.55.Jk; 06.20.Fn; 06.60.Mr; 07.79.Lh     

Trace norm estimates for products of integral operators and diffusion semigroups

We give trace norm estimates for products of integral operators and for diffusion semigroups. These are applied to differences of heat semigroups. A natural example of an integral operator with finite trace which is not trace class is given.     

All solid-state sum-frequency generation of 1.12-W continuous-wave laser at 588 nm

A new resonator design for doubly resonant continuous-wave (CW) intracavity sum-frequency mixing (SFM) is reported. 1.12 W of coherent radiation at 588 nm is generated by mixing 1062-nm Nd:GdVO4laser and 1319-nm Nd:YAG laser. The optical-to-optical conversion efficiency is up to 3.7%.     

Idempotency of Extensions via the Bicompletion

Let Top ₀ be the category of topological T ₀-spaces, QU ₀ the category of quasi-uniform T ₀-spaces, T : QU ₀ → Top ₀ the usual forgetful functor and K : QU ₀ → QU ₀ the bicompletion reflector with unit k : 1 → K. Any T-section F : Top ₀ → QU ₀ is called K-true if KF = FTKF, and upper (lower) K-true if KF is finer (coarser) than FTKF. The literature considers important T-sections F that enjoy all three, or just one, or none of these properties. It is known that T(K,k)F is well-pointed if and only if F is upper K-true. We prove the surprising fact that T(K,k)F is the reflection to Fix(TkF) whenever it is idempotent. We also prove a new characterization of upper K-trueness. We construct examples to set apart some natural cases. In particular we present an upper K-true F for which T(K,k)F is not idempotent, and a K-true F for which the coarsest associated T-preserving coreflector in QU ₀ is not stable under K. We dedicate this paper to the memory of Sérgio de Ornelas Salbany (1941–2005).     

Direct mass measurements of neutron-deficient 152Sm projectile fragments at the FRS-ESR facility

The FRS-ESR facility at GSI provides one of the most efficient methods for direct mass measurements. In the present experiment, exotic nuclei were produced via fragmentation of ¹⁵²Sm projectiles in a thick beryllium target at 500-600 MeV/u, separated in-flight with the fragment separator FRS, and injected into the storage-cooler ring ESR. Time-resolved Schottky Mass Spectrometry was applied for mass measurements of stored and electron-cooled bare and few-electron ions. 373 different nuclides were identified by means of the spectra of their revolution frequencies. Masses for 18 nuclides (⁸⁴Zr, ⁹²Ru, ⁹⁴Rh, ^107,108,110Sb, ^111,112,114I, ¹¹⁸Ba, ^122,123La, ¹²⁴Ce, ¹²⁷Pr, ¹²⁹Nd, ¹³²Pm, ¹³⁴Sm, ¹³⁷Eu) have been determined for the first time. Masses for ^111,112I and ¹¹³Xe have been obtained via known α-decay energies. The experiment and first results will be presented.     

Concentration inequalities for random fields via coupling

We present a new and simple approach to concentration inequalities in the context of dependent random processes and random fields. Our method is based on coupling and does not use information inequalities. In case one has a uniform control on the coupling, one obtains exponential concentration inequalities. If such a uniform control is no more possible, then one obtains polynomial or stretched-exponential concentration inequalities. Our abstract results apply to Gibbs random fields, both at high and low temperatures and in particular to the low-temperature Ising model which is a concrete example of non-uniformity of the coupling.      

Polarizability effect in metallic clusters

Langevin approach implemented in the inelastic cross-sections measured for the low-energy electrons colliding with metallic clusters points out that statical form of the polarizability dominate at energies less than 1.25 eV. The dynamical form comes into play at energies around 1.3 eV. The form of the polarizabilities indicates that polarizability of the metallic clusters is energy-dependent.     

Spin tunneling properties in mesoscopic magnets: effects of a magnetic field

The tunneling of a giant spin at excited levels is studied theoretically in mesoscopic magnets with a magnetic field at an arbitrary angle in the easy plane. Different structures of the tunneling barriers can be generated by the magnetocrystalline anisotropy, the magnitude and the orientation of the field. By calculating the nonvacuum instanton solution explicitly, we obtain the tunnel splittings and the tunneling rates for different angle ranges of the external magnetic field ( θ _H = π/2 and π/2 < θ _H < π). The temperature dependences of the decay rates are clearly shown for each case. It is found that the tunneling rate and the crossover temperature depend on the orientation of the external magnetic field. This feature can be tested with the use of existing experimental techniques. Received 12 March 2001 and Received in final form 18 October 2001