Formation of the intermediate semiconductor larger for the Ohmic contact to silicon carbide using Germanium implantation

By formation of an intermediate semiconductor layer (ISL) with a narrow band gap at the metallic contact/SiC interface, this paper realises a new method to fabricate the low-resistance Ohmic contacts for SiC. An array of transfer length method (TLM) test patterns is formed on N-wells created by P⁺ ion implantation into Si-faced p-type 4H-SiC epilayer. The ISL of nickel-metal Ohmic contacts to n-type 4H-SiC could be formed by using Germanium ion implantation into SiC. The specific contact resistance ρ_c as low as 4.23× 10^-5~Ωega \cdotcm² is achieved after annealing in N₂ at 800~°C for 3~min, which is much lower than that (>900~°C) in the typical SiC metallisation process. The sheet resistance R_sh of the implanted layers is 1.5~kΩega /\Box. The technique for converting photoresist into nanocrystalline graphite is used to protect the SiC surface in the annealing after Ge⁺ ion implantations.     

Global existence of strong solutions of Navier–Stokes equations with non-Newtonian potential for one-dimensional isentropic compressible fluids

We consider strong solutions to the initial boundary value problems for the isentropic compressible Navier–Stokes equations in one dimension: $$\rho\left\{\begin{array}{lll} t+(\rho u)_x=0\quad\quad\quad\quad\quad\quad\quad\quad\quad\quad\quad\quad\quad\quad\quad\, {\rm in}\,(0,T)\times(0,1)\\ (\rho u )_t+(\rho u^2)_x+\rho \Phi_x-(\mu( \rho )u_x)_x+P_x=0\quad\quad {\rm in}\,(0,T)\times(0,1) \\\left(\left(\frac{\delta(\Phi_x)^2\,+\,1}{(\Phi_x)^2\,+\,\delta}\right)^{\frac{2-p}{2}}\Phi_x\right)_x=4\pi g(\rho-\frac{1}{|\Omega|}\int\nolimits_\Omega \rho dx\,\,\,\, )\quad\,\, {\rm in}\,(0,T)\times(0,1)\end{array}\right.$$ Here, the Φ is a non-Newtonian potential and strong solutions of the problem and obtains the uniqueness under the compatibility condition.     

Study on LiFe<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Sm<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>PO<Subscript>4</Subscript>/C used as cathode materials for lithium-ion batteries with low Sm component

LiFe_1???x Sm _x PO₄/C cathode materials were synthesized though a facile hydrothermal method. Compared with high-temperature solid-phase sintering, the method can allow for the fabrication of low Sm content (2 %), a scarce and expensive rare earth element, while the presence of an optimized carbon coating with large amount of sp²-type carbon sharply increases the material’s electrochemical performance. The high-rate dischargeability at 5 C, as well as the exchange current density, can be increased by 21 and 86 %, respectively, which were attributed to the fine size and the large cell parameter a/c as much. It should be pointed out that the a/c value will be increased for the LiFePO₄ Sm-doped papered by both of the two methods, while the mechanism is different: The value c is increased for the front and the value a is decreased for the latter, respectively.     

Enhanced robustness of zero-line modes in graphene via magnetic field

We systematically studied the influence of magnetic field on zero-line modes (ZLMs) in graphene and demonstrated the physical origin of their enhanced robustness by employing nonequilibrium Green’s functions and the Landauer–Büttiker formula. We found that a perpendicular magnetic field can separate the wavefunctions of the counter-propagating kink states into opposite directions. Specifically, the separation vanishes at the charge neutrality point and increases as the Fermi level deviates from the charge neutrality point and can reach a magnitude comparable to the wavefunction spread at a moderate field strength. Such spatial separation of oppositely propagating ZLMs effectively suppresses backscattering and is more significant under zigzag boundary condition than under armchair boundary condition. Moreover, the presence of magnetic field enlarges the bulk gap and suppresses the bound states, thereby further reducing the scattering. These mechanisms effectively increase the mean free paths of the ZLMs to approximately 1 μm in the presence of a disorder.     

Electrochemical properties of rutile TiO2 nanorods as anode material for lithium-ion batteries

In this paper, we synthesized rutile TiO₂ nanorods by hydrolysis of TiCl₄ ethanolic solution in water at 50?°C. Scanning electron microscopy and transmission electron microscopy images show that the as-prepared sample was consisted of nanoflowers of about 500?nm in sizes, and each petal of nanoflowers was assembled by several nanorods. We tested the electrochemical properties of the rutile TiO₂ nanorods as an anode material for lithium-ion batteries. The rutile TiO₂ nanorods exhibited a large initial discharge capacity of 223?mA?h?g^?1, and the stabilized capacity was as high as 170?mA?h?g^?1 after 100 cycles. These improved electrochemical performances may be attributed to the shorter diffusion length for both the electron and Li⁺, and the large electrode?Celectrolyte contact area offered by the nanorods with a large specific surface area, which facilitated the lithium ions insertion and extraction.