B(0,N)-graded Lie superalgebras coordinatized by quantum tori Dedicated to Professor Sheng GONG on the occasion of his 75th birthday

We use a fermionic extension of the bosonic module to obtain a class of B(0, A)graded Lie superalgebras with nontrivial central extensions.     

Acoustic characterization and prediction for fan-duct-plenum-room integrations

This paper investigates mutual influence of duct and room acoustics in the whole fan-duct-plenum-room integrations. Applying the parametric design language of finite element software ANSYS (APDL), dimensional and positional influence on system acoustics has been studied. Models with different room dimensions, duct lengths, duct cross-sections, duct locations, duct discharges and duct elbow were constructed, and their characteristics were compared qualitatively. Results show that small rooms, short ducts, large duct cross-sections and bell mouth duct discharges help to increase room sound pressure levels (SPLs); SPLs in ducts and plenums are sensitive to duct dimensions and duct discharge types but insensitive to duct locations and room dimensions; duct elbows have relatively indistinct acoustic influence in each component. Based on the calculation results, a semi-experimental method was proposed for simply and approximately evaluating indoor acoustic spectra of fan-duct-plenum-room integrations, then an example was used to demonstrate the prediction process. Finally, by adopting several ideal models, sound field constitutions, duct and room wall admittances and duct end reflection were explored quantitatively. This study may give a detailed understanding of fan-duct-plenum-room acoustics for researchers, also it might provide a new, simple and approximate prediction method for professionals to evaluate and improve fan-ducted acoustics.     

Effects of Si doping on the structural and electrical properties of Ge2Sb2Te5 films for phase change random access memory

The effects of Si doping on the structural and electrical properties of Ge₂Sb₂Te₅ film are studied in detail. Electrical properties and thermal stability can be improved by doping small amount of Si in the Ge₂Sb₂Te₅ film. The addition of Si in the Ge₂Sb₂Te₅ film results in the increase of both crystallization temperature and phase-transition temperature from face-centered cubic (fcc) phase to hexagonal (hex) phase, however, decreases the melting point slightly. The crystallization activation energy reaches a maximum at 4.1 at.% and then decreases with increasing dopant concentration. The electrical conduction activation energy increases with the dopant concentration, which may be attributed to the increase of strong covalent bonds in the film. The resistivity of Ge₂Sb₂Te₅ film shows a significant increase with Si doping. When doping 11.8 at.% of Si in the film, the resistivity after 460 °C annealing increases from 1 to 11 mΩ cm compared to the undoped Ge₂Sb₂Te₅ film. Current-voltage (I-V) characteristics show Si doping may increase the dynamic resistance, which is helpful to writing current reduction of phase-change random access memory.     

介质极化的瞬时相位与振幅

求解电子运动的二阶微分方程，在旋转波近似下，介质在外场突然变化时产生的瞬态感应极化与外场同频，但相位总是落后，最大落后为π/2；振幅大小与初态有关，随时间按指数规律衰减，衰减快慢由介质的阻尼系数决定。     

类氢类氦类锂镁离子双电子复合的旁观电子角动量研究

类氢类氦类锂镁离子经中间双激发态进行的双电子复合过程在研究惯性约束聚变电子温度中占有很重要的地位.用准相对论方法计算了双电子复合经不同Rydberg态跃迁通道的复合速率系数,并给出不同离化度离子的双电子复合速率系数随电子温度的变化规律.显示出离子的相关能对峰值的电子温度有很大影响,当类氢离子跃迁通道的旁观电子角动量为1时双电子复合系数最大,而类锂离子是旁观电子角动量为3时最大. 关键词： 双电子复合 镁离子 角动量     

红外光谱对碱土金属二元羧酸盐结构的研究

研究了三十种二元羧酸金属盐的红外光谱，讨论了金属离子和二元酸的种类对二元酸盐配位结构的影响。发现Mg盐、Ba盐，Sr盐为螯合配位，Ca盐，Zn盐中同时存在螯合配位和桥式配位，二元酸的种类对羧酸盐配位结构没有影响。对羧酸盐在常温和熔融后的栩位方式和结构上的差异的研究结果表明，Mg盐，Ca盐与Sr盐，Ba盐在熔融后的结构变化不同。     

有界连通区域上Dirichlet空间及其算子

本文主要讨论了有界连通区域Dirichlet空间上Toeplitz算子的Fredholm性质,计算了符号在C1中的Toeplitz算子的本性谱和Fredholm指标．     

Temperature dependence of interband transition energy in InGaAsN strain-compensated quantum-well and ridge-waveguide lasers fabricated with pulsed anodic oxidation

Ridge-waveguide InGaAsN triple-quantum-well strain-compensated lasers grown by metal organic chemical vapor deposition were fabricated with pulsed anodic oxidation. The laser’s output power reached 145 mW in continuous-wave mode at room temperature for a 4-?m -stripe-width laser. Continuous-wave single longitudinal mode operation was maintained at a high injection current level with a wavelength of 1287.3 nm at room temperature. Single longitudinal mode operation at 1317.2 nm was achieved at twice the threshold current at 100 °C. The band gap of InGaAsN in the quantum wells at different temperatures was calculated and compared to the measured temperature-dependent laser wavelength.     

Spectrum Simulation of Li-Like Aluminium Plasma

X-ray emission spectra for L-shell of Li-like aluminium ions are simulated by using the flexible atomic code based on the collisional radiative model. Atomic processes including radiative recombination, dielectronic recombination, collisional ionization and resonance excitation from the neighbouring ion （Al^9＋ and Al^11＋ ） charge states of the target ion （Al^10＋） are considered in the model. In addition, the contributions of different atomic processes to the x-ray spectrum are analysed. The results show that dielectronic recombination, radiative recombination, collisional ionization and resonance excitation, other than direct collisional excitation, are very important processes.     

Comparison of the boundary theory with the contact rule of phase regions and Gupta’s method

The phase boundary theory and the contact rule of phase regions are compared, and some weaknesses of the latter are manifested. The comparison between the Gupta’s method and the boundary theory method for constructing multicomponent isobaric sections is also presented.