Nanoparticle composites: FePt with wide-band-gap semiconductor

We present a simple way to synthesize FePt and ZnO (wide-band-gap semiconductor) nanoparticle composites. The FePt nanoparticles were fabricated using the method reported by Sun et al. By controlling the heating rate, 3 nm FePt nanoparticles were synthesized. Well-dispersed FePt and ZnO nanoparticle composites were prepared by further adding zinc acetate and oleyl amine into the 3 nm FePt nanoparticle dispersion. By controlling the molar ratio of the FePt and zinc acetate, FePt and ZnO nanoparticle composites with different FePt particle fractions were obtained. The intensity of photo luminescence spectra of the nanoparticle composites increases very much with decreasing FePt particle fraction, whereas the peak position shifts a little. After annealing at 550 °C for half an hour, the nanoparticle composites become magnetically hard or semi-hard with coercivity much dependent on the FePt particle volume fraction. The coercivity of the composites increases with annealing temperature. The composites hold the promise of applications in new generation recording and/or optical devices.     

Generalization of Einstein relation for doped organic semiconductors

Under the assumption of Gaussian energy distributions of the lowest unoccupied molecular orbital (LUMO) and the highest occupied molecular orbital (HOMO), analytical expressions of generalized Einstein relation for electron and hole transport in doped organic semiconductor thin films are developed. Numerical calculations show that, although traditional Einstein relation still holds for low carrier concentrations, that is, the diffusion-coefficient-to-mobility ratio in units of k_BT/q, with k_B the Boltzmann’s constant, T the temperature and q the elementary charge, equals 1. But when the electron (hole) concentration is high, the diffusion-coefficient-to-mobility ratio for electrons (holes) changes strongly with the electron (hole) concentration, the doping level, the mean energy of LUMOs (HOMOs) of the dopant E_Ld (E_Hd) and the host E_L (E_H), as well as their variances. Dopants with E_Ld<E_L (E_Hd>E_H) affect the diffusion-coefficient-to-mobility ratio mainly in the range of low and middle carrier concentrations, while those with E_Ld>E_L (E_Hd<E_H) have significant effect only in the range of high carrier concentrations. It was found that there can be a maximum in the dependence of the diffusion-coefficient-to-mobility ratio on the quasi-Fermi energy or carrier concentration exist, for appropriate values of the doping level, the mean energy and variance of LUMO or HOMO states of the dopant. PACS 71.20.Rv; 72.90.+y; 73.50.-h     

带强迫项变系数组合KdV方程的显式精确解

通过构造两个新的Riccati方程组，推广了Riccati方法，使其具有简洁的形式，丰富和发展了已有的结果，借助Mathematica软件，求出了带强迫项变系数组合KdV方程的一些精确解，包括各种类孤波解、类周期解和变速孤波解. 关键词： Riccati方程组 变系数组合KdV方程 强迫项 类孤波解     

Optical characteristics of semiconductor saturable absorber mirrors investigated by the reflection Z-scan technique

Recently, the semiconductor saturable absorber mirror (SESAM) has become a key component of passive mode-locked solid-state lasers. Here we present a simple method based on the reflection Z-scan technique to measure the key optical parameters of SESAM such as saturation fluence and modulation depth. The experimental results demonstrate that our method is able to perform with a high accuracy of 10⁻⁴ and a dynamic range of over four orders of magnitude.     

Raman spectroscopic study of ceramic Sr2Bi4Ti5O18

Raman spectra of ceramic Sr2Bi4Ti5O18 （SBTi5） are reported to consist of four different Raman bands. Temperature-dependent spectra reveal the relationship between the lattice vibration and the material＇s structure. There appears a relatively large change in structure of the material at about 273K, The anharmonic potential of the material has a great influence on its phonon mode full width at half maximum （FWHM）, which can be expressed by a function of temperature. Theoretical fittings of the FWHMs for the two modes at around 312 cm^-1 and 464cm^-1 indicate that the latter phonon mode is more anharmonic than the former one.     

DIELECTRIC EFFECT ON THE RADIO-FREQUENCY CHARACTERISTICS OF A RECTANGULAR WAVEGUIDE GRATING TRAVELING WAVE TUBE

A new type of partial-dielectric-loaded rectangular waveguide grating slow-wave structure (SWS) for millimeter wave traveling wave tube (TWT) is presented in this paper. The radio-frequency characteristics including the dispersion properties, the longitudinal electric field distribution and the beam-wave coupling impedance of this structure are analyzed. The results show that the dispersion of the rectangular waveguide grating circuit is weakened, the phase velocity is reduced and the position of the maximum E _z is basically invariant after partially filling the dielectric materials in the rectangular waveguide grating SWS. Although the coupling impedance decreases a little, it still keeps above 40 Ω.     

Dispersion Compensation in Externally Modulated Transmission System Using Chirped Fiber Grating

We present an externally modulated NTSC AM-VSB erbium-doped fiber amplifier (EDFA)-repeated system in the 1550 nm region which uses a chirped fiber grating (CFG) as a dispersion compensation device. In contrast to the conventional externally modulated fiber optical CATV systems, either with or without dispersion compensation fiber (DCF), good performances of carrier-to-noise ratio (CNR) ≥50 dB, composite second order (CSO) ≥74 dB, and composite triple beat (CTB) ≥65 dB were achieved for the full channel band after a 100-km single-mode fiber (SMF) transmission.     

倒置结构锥形束计算机层析的精确成像与Grangeat算法实现

研究了一种新的圆加垂直单弧段的锥顶轨迹的锥形束计算机层析（CT）的完全性条件和精确重建的Grangeat方法，提出了倒置结构锥形束计算机层析的便于实现的圆加垂直多弧段的成像结构及进行精确重建的完全性条件。利用倒置成像结构与现有成像结构之间的等价关系，给出了倒置结构锥形束计算机层析的重建算法。最后，对上述几方面进行了计算机模拟。     

神经网络在工程爆破应力波规律探讨中的应用

采用BP（Back Propagation)前馈人工神经网络模型，对工程爆破中柱状震源的自由场应力波传播规律进行了探讨。结果表明：利用人神经网络模型的非线性映射功能，可以较好地给出工程爆破引起的近区自由场力学规律，对于同类型问题的研究，也有着很重要的意义。     

关于Asgeirsson均值等式的反问题

对于常系数线性偏微分算子(?),方程L_xu(x,y)=L_yu(x,y)的所有C^m解满足Asgcirsson均值等式的充分必要条件是L_x=c+a△_x,这里a(≠0),c为常数,△_x为Laplace算子.