Three New Polyoxygenated Steroids from Two Species of the South China Sea Gorgonian Muricella flexuosa and Menella verrucosa Brundin

Three new polyoxygenated steroids, muricesteroid ( 1 ), and menellsteroids A ( 2 ) and B ( 3 ), were isolated from two species of the South China Sea gorgonian Muricella flexuosa and Menella verrucosa Brundin , respectively. The structures of these new compounds were elucidated on the basis of extensive spectroscopic analysis, chemical methods and comparison with known related compounds.     

A finite model property for RMImin

It is proved that the variety of relevant disjunction lattices has the finite embeddability property. It follows that Avron's relevance logic RMI _min has a strong form of the finite model property, so it has a solvable deducibility problem. This strengthens Avron's result that RMI _min is decidable. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Newton-Leibniz integration for ket-bra operators in quantum mechanics and derivation of entangled state representations

Newton-Leibniz integration rule only applies to commuting functions of continuum variables, while operators made of Dirac’s symbols (ket versus bra, e.g., |q〉〈q| of continuous parameter q) in quantum mechanics are usually not commutative. Therefore, integrations over the operators of type |〉〈| cannot be directly performed by Newton-Leibniz rule. We invented an innovative technique of integration within an ordered product (IWOP) of operators that made the integration of non-commutative operators possible. The IWOP technique thus bridges this mathematical gap between classical mechanics and quantum mechanics, and further reveals the beauty and elegance of Dirac’s symbolic method and transformation theory. Various applications of the IWOP technique, including constructing the entangled state representations and their applications, are presented.     

研究K4-同胚图K4(α,1,1,δ,ε,η)色性的一个引理

主要介绍了一个引理，这个引理奠定了K4－同胚图K4（α，1，1，δ，ε，η）色性研究的基础。     

不同入射角度下强流脉冲电子束能量沉积剖面和束流传输系数模拟计算

 强流脉冲电子束在材料中的能量沉积剖面、能量沉积系数和束流传输系数受其入射角的影响很大，理论计算了0.5~2.0MeV的电子束以不同的入射角在Al材料中的能量沉积剖面和能量沉积系数，并且还计算了0.4~1.4MeV电子束以不同入射角穿透不同厚度C靶的束流传输系数。计算结果表明，随着入射角的增大，靶材表面层单位质量中沉积的能量增大，电子在靶材料中穿透深度减小，能量沉积系数减小，相应的束流传输系数也减小；能量为0.5~2.0MeV的电子束当入射角在60°~70°时在材料表面层单位质量中沉积的能量较大。     

Hamiltonian N2‐locally connected claw‐free graphs

A graph G is N₂‐locally connected if for every vertex ν in G, the edges not incident with ν but having at least one end adjacent to ν in G induce a connected graph. In 1990, Ryjá?ek conjectured that every 3‐connected N₂‐locally connected claw‐free graph is Hamiltonian. This conjecture is proved in this note. © 2004 Wiley Periodicals, Inc. J Graph Theory 48: 142–146, 2005     

Fabrication of Dendrimer－like PAMAM Based on Silica Nanoparticles

A G 4.0 dendrimer-like poly (amido amine) (PAMAM) based on silica nanoparticles was fabricated via a divergent approach.It was built from γ-aminopropyi silica nanoparfides (APSN) core via repetitive addition of acrylate (MA) and hexylenediamine (HDA). FT-IR and EA were used to monitor the progress of dendrimer during each step. The amino group content of the resulting product increased from 0.49 to 3.72 mmol/g after the 4th generation. In addition, the percentage of grafting increased with increasing generation and reached to 65.9% after 4th generation. It was found that the resulting silica nanoparticles could be dispersed in methanol with a mean hydrodynamic particle diameter of 152.7 nm although the silica nanoparticles had agglomerated during the storage period.     

Deposition of Hydrogen-Free Silicon Nitride Thin Films by Microwave ECR plasma Enhanced Magnetron Sputtering at Room Temperature

Hydrogen-free silicon nitride （SiNx） films were deposited at room temperature by microwave electron cyclotron resonance （MW-ECR） plasma enhanced unbalance magnetron sputtering system. Both Fourier-transform infrared spectroscopy and x-ray photoelectron spectroscopy are used to study the bonding type and the change of bonding structures of the silicon nitride films. The results indicate that the chemical structure and composition of SiNx films deposited by this technique depend strongly on the N2 flow rates, the stoichiometric SiNx film, which has the highest hardness of 22.9 GPa, could be obtained at lower N2 flow rate of 4 sccm.