Chemical bonding states and atomic distribution within Zn(S,O) film prepared on CIGS/Mo/glass substrates by chemical bath deposition

Zn(S,O) thin films fabricated on CIGS/Mo/glass substrates by using chemical bath deposition (CBD) in acidic and basic solutions were studied. The Zn(S,O) thin films prepared in acidic solution [A-Zn(S,O) thin film] showed better crystallinity and a more compact surface morphology with larger grains than those prepared in basic solution [B-Zn(S,O) thin film] did. From the analysis of the chemical bonding states, at the initial growth step, the concentration ratio of Zn–O/Zn–S bonds in A-Zn(S,O) thin films was found to be approximately zero, while that in B-Zn(S,O) thin films was approximately equal to 1. The elemental distribution according to depth, determined by secondary ion mass spectroscopy (SIMS), was shown to be uniform throughout both the A- and B-Zn(S,O) thin films. To reduce the number of Zn–O bonds in the B-Zn(S,O) thin films, the samples were post-annealed at up to 300 °C under vacuum, after which the concentration ratio of Zn–O/Zn–S bonds decreased by about 71% without any change in the crystallinity or surface morphology.     

Observation of D+(s)K- and evidence for D+(s)pi- final states in neutral B decays

We report the first observation of a B meson decay that is not accessible by a direct spectator process. The channel B(0)-->D(+)(s)K- is found in a sample of 85 x 10(6) BB; events, collected with the Belle detector at KEKB, with a branching fraction B(B(0)-->D(+)(s)K-)=(4.6(+1.2)(-1.1)+/-1.3) x 10(-5). We also obtain evidence for the B0-->D(+)(s)pi(-) decay with branching fraction B(B0-->D(+)(s)pi(-))=(2.4(+1.0)(-0.8)+/-0.7) x 10(-5). This value may be used to extract a model-dependent value of |V(ub)|.     

Measurement of B(0)(d)-B_(0)(d) mixing rate from the time evolution of dilepton events at the upsilon(4S)

We report a determination of the B(0)(d)-&B_(0)(d) mixing parameter Deltam(d) based on the time evolution of dilepton yields in Upsilon(4S) decays. The measurement is based on a 5.9 fb(-1) data sample collected by the Belle detector at KEKB. The proper-time difference distributions for same-sign and opposite-sign dilepton events are simultaneously fitted to an expression containing Deltam(d) as a free parameter. Using both muons and electrons, we obtain Deltam(d) = 0.463+/-0.008 (stat)+/-0.016 (syst) ps(-1). This is the first determination of Deltam(d) from time evolution measurements at the Upsilon(4S). We also place limits on possible CPT violations.     

Biological functionalization of the amine-terminated Si(100) surface by glycine

A peptide reaction of glycine on an amine-terminated Si(100) surface was investigated using C 1s, N 1s, O 1s, and Si 2p core-level spectroscopy, where the amine-terminated Si(100) surface was prepared using NH₃. In-situ thermal treatments at a mild temperature of 50 °C after the adsorption of glycine on a room-temperature amine-terminated Si(100) surface induced the peptide reaction between the carboxyl group of glycine and the amine group of the surface. This suggests that the amine-terminated Si(100) surface can be an excellent template for constructing a junction between a biomaterial and a Si surface using a dry process.     

Spliced-fiber mode filter for 1060-nm single-mode transmission

We present a novel mode filter operating for the 1060-nm band, which selectively removes the power of the high-order mode (HOM) from a conventional single-mode fiber (C-SMF) that supports two modes at the short-wavelength band. Our mode filter is fabricated very easily by fusion-splicing a short section of short-wavelength single-mode fiber in the middle of the C-SMF link. By using our spliced-fiber mode filter (SF-MF), a high HOM suppression performance of > 18 dB has been achieved with a low insertion loss of < 0.3 dB over the full band of optical communications from 1050 nm to 1650 nm. We have also developed a new mode power measurement scheme that takes advantage of the bending sensitivity of the HOM guidance. This measurement scheme enabled us to evaluate accurately the performance factors of the fabricated mode filter.     

Anisotropic electrical properties of Bi0.5(Na0.75K0.25)0.5TiO3 ceramics fabricated by reactive templated grain growth (RTGG)

We have fabricated lead-free Bi_0.5(Na_0.75K_0.25)_0.5TiO₃ (BNKT) ceramics by a conventional process (CP) and reactive templated grain growth (RTGG) methods. The effect of grain orientation on structure, dielectric, complex impedance and electrical properties was investigated. The phase formation and grain morphology of BNKT ceramics were examined by X-ray diffraction (XRD) and scanning electron microscope (SEM), respectively. High dielectric constant and low dielectric loss was observed for grain oriented (textured) BNKT ceramics. Complex impedance, temperature dependent ac and dc conductivity were performed to explore the conduction behavior of the prepared BNKT ceramics.     

Highly stable,frequency-controlled mode-locked erbium fiber laser comb

A mode-locked Er:fiber laser-based optical frequency comb with high stability in the repetition frequency and carrier-envelope offset (CEO) frequency is realized. The CEO beat signal was detected right after the supercontinuum generation by a compact single-beam f–2f self-referencing interferometer, which does not require further delay compensation. The stabilized repetition frequency has an out-of-loop tracking stability of 1.3×10^-13/ for an integration time τ less than 1000 s, which is limited by the stability of the frequency measurement system. The stabilized CEO frequency has a residual fluctuation of 0.52 mHz measured with a 1 s gate time. This is, to our knowledge, the highest tracking stability realized for fiber laser-based optical frequency comb. PACS 06.30.Ft; 42.60.Lh; 42.55.Wd     

Hysteresis suppression improvement of polycrystalline silicon thin-film transistors by two-step hydrogenation

The effect of two-step hydrogenation, consisting of plasma hydrogenation and annealing in hydrogen, on the hysteresis phenomenon of metal-induced unilaterally crystallized silicon thin-film transistors (MIUC-Si TFTs) was investigated. The large hysteresis level of the conventional MIUC-Si TFTs caused a wide variation of the drain current with the previous gate voltage. As the plasma exposure time increased, the plasma hydrogenation commonly used for stability in poly-Si TFTs was found to increase the hysteresis level of MIUC-Si TFTs after a minimum point. This is because plasma-induced damages correlated with unique defects of MIUC-Si such as metal-related weak bonds, are accompanied by passivation. The following annealing repaired the damages. Consequently the hysteresis level was lower, which resulted in a narrower variation of the drain current.     

Response of line focus acoustic microscope to specimen containing a subsurface crack

A numerical model is presented to calculate V(z) and V(x, z) curves for a line focus acoustic microscope and a specimen containing a subsurface crack. In this model, a Gaussian beam which is tracked through the lens into the coupling fluid and into the specimen, interacts with the crack. The numerical approach is based on the solution of singular integral equations by the boundary element method. The system of singular integral equations follows from the conditions at the interface of the coupling fluid and the specimen and on the faces of the crack. An electromechanical reciprocity relation is used to express the voltage at the terminals of the microscope's transducer in terms of the calculated incident and back-scattered fields. V(z) and V(x, z) curves are presented for various locations and orientations of the crack. The characteristic features of the V(z) and particularly the V(x, z) curves, as they relate to crack configuration, are discussed in some detail.