Research on surface photovoltage spectroscopy for GaAs photocathodes with AlxGa1-xAs buffer layer

Surface photovoltage spectroscopy equations for cathode materials with an AlxGa1-x As buffer layer are determined in order to effectively measure the body parameters for transmission-mode (t-mode) photocathode materials before Cs-O activation.Body parameters of cathode materials are well fitted through experiments and fitting calculations for the designed AlxGa1-x As/GaAs structure material.This investigation examines photo-excited performance and measurements of body parameters for t-mode cathode materials of different doping structures.It also helps study various doping structures and optimize structure designs in the future.     

微纳尺度光纤布拉格光栅折射率传感的理论研究

亚波长直径微纳光纤强倏逝场传输的光学特性,使其对周围介质折射率的变化具有极高的灵敏度.本文提出一种基于微纳尺度光纤布拉格光栅(MNFBG)的折射率传感器,结合微纳光纤倏逝场传输和光纤布拉格光栅(FBG)强波长选择的特性来实现高精度折射率传感,对其制备可行性进行了讨论.论文中对MNFBG折射率传感机理进行了深入的理论分析,并使用OptiGrating软件进行了数值模拟,模拟数据显示MNFBG折射率测量的灵敏度随着光纤半径的减小而增加,其中光纤半径为400 nm的MNFBG灵敏度可达到993 nm/RIU,相比于包层蚀刻的FBG灵敏度增加了170倍,说明MNFBG对发展微型化、高灵敏度折射率传感器具有良好的应用前景. 关键词： 微纳光纤 光纤布拉格光栅 折射率传感     

Improved crystal quality of GaN film with the in-plane lattice-matched Ino.17Alo.s3N interlayer grown on sapphire substrate using pulsed metal-organic chemical vapor deposition

We report on an improvement in the crystal quality of GaN film with an Ino.17Alo.83N interlayer grown by pulsed metal-organic chemical vapor deposition, which is in-plane lattice-matched to GaN films. The indium composition of about 17% and the reductions of both screw and edge threading dislocations （TDs） in GaN film with the InA1N interlayer are estimated by high resolution X-ray diffraction. Transmission electron microscopy （TEM） measurements are employed to understand the mechanism of reduction in TD density. Raman and photoluminescence measurements indicate that the InA1N interlayer can improve the crystal quality of GaN film, and verify that there is no additional residual stress induced into the GaN film with InA1N interlayer. Atomic force microscopy measurement shows that the InA1N interlayer brings in a smooth surface morphology of GaN film. All the results show that the insertion of the InA1N interlayer is a convenient method to achieve excellent crystal quality in GaN epitaxy.     

一种蓝色聚合物激光材料

聚合物作为一种有机发光材料,由于在平板显示和光电子器件中的良好应用前景而受到广泛研究［１～２］．近年来,一个重要进展是在聚合物中观测到了受激发射（简称Ｐｏｌｙ－ｍｅｒ激光）现象［３～６］．Ｐｏｌｙｍｅｒ激光最早是在溶液中实现的［３～４］．作为一种新型...     

利用宇宙线对BESⅢ量能器CsⅠ（Tl）晶体探测器单元的测量

利用宇宙射线进行探测器模型的性能测试是高能物理普遍采用的方法，其中最重要的步骤之一就是确定宇宙线入射的准确位置和径迹．多数采用丝室探测器来进行宇宙线的精确定位，需要很高的造价和复杂的电子学系统．本文介绍一种简单的定位方法，采用塑料闪烁体条加波移剂光纤编码读出的方式，可以实现精度为1cm的定位．据此建立了一套实验装置，对BESⅢ电磁量能器CsⅠ（Tl）晶体探测器单元的光输出强度和不均匀性进行了测量．     

激光单分子探测技术的研究

文中介绍利用激光激发分子荧光的方法探测液体中单个染料分子的新技术，以及作者自行设计和研制的激光单分子探测谱仪。通过探测“光子爆发”，把单个染料分子的荧光同很强的背景杂散光区别开来。进一步用８２ＭＨｚ高重复频率的锁模激光器和时间门符合技术，成功地消除了Ｒａｍａｎ散射光。目前该谱仪达到的检测限为灵敏区内仅有～７个Ｒ６Ｇ分子。     

三维荧光与紫外光谱联合表征样品中猝灭剂赋存状态:以胡敏酸与Fe(Ⅲ)相互作用为例

利用三维荧光-紫外光谱表征了荧光猝灭剂的赋存状态,当样品体系中存在Fe(Ⅲ)的情况下,胡敏酸会发生荧光猝灭现象,而其紫外光谱基本不受影响。考察了胡敏酸荧光强度I值(Ex/Em=300 nm/510nm)和紫外吸光度A值(UV300)的变化,I/A比值越小,说明水样中猝灭剂Fe(Ⅲ)浓度越高。当胡敏酸为10,15和20 mg·L~(-1)时,根据Stern-Volmer公式I/I_0=1-f_c×K_c×[c]/(1+K_c×[c])以及拟合函数I/A=f×[k/(CFe~(3+)+c)+b],拟合得到荧光猝灭常数K_c=1.08~1.15,比例系数f_c=1.10~1.14之间,胡敏酸荧光强度值与吸光度比值(I/A)及铁离子浓度(C_(Fe~(3+))相关曲线系数f=0.83~1.19,k=587.19~612.19,c=0.87~0.92,b=-87.09~-46.36,拟合曲线相关性R~2均为0.99。Stern-Volmer公式描述了Fe(Ⅲ)对胡敏酸荧光的猝灭作用,但实际样品测定时难以获得无猝灭剂时的荧光强度I_0。基于荧光强度I_0与紫外吸光度A之间的内在联系,两者比值I/A与Fe(Ⅲ)浓度c的拟合函数亦可以反映Fe(Ⅲ)对胡敏酸荧光的影响。利用拟合公式预测城市污水厂及纳污河流样品的树脂分离富集液中铁离子浓度,与电感耦合等离子体发射光谱仪实际测量值相比,铁离子浓度较高的情况下(铁离子浓度大于0.4 mg·L~(-1)时)预测结果较好,可以判断猝灭剂的存在及相应浓度。     

差动式光纤微小角度传感器

采用双面反射调制技术,设计了双光纤差动式光纤微小角度传感器.动态范图±10’,分辨率1",精度可达3".可用于各种非接触微小角度的测量场合.     

Computer Simulation of a 3-D Sensing System with Structured Illumination

A computer simulation system of three-dimensional sensing with structured illumination is presented. It includes the generation of deformed fringe patterns from 3-D shapes and the reconstruction of 3-D shapes, conversely. Some experimental results of the deformed fringe pattern and the reconstructed object shapes are presented. We have also discussed the effect of some major system parameters on the measurement results and considered how to correct these parameters according to the measurement result of the standard plane. Using this simulation system, the major system parameters: environmental conditions, measurement accuracy and algorithm evaluation of the 3-D shape measurement system based on PMP, FTP, SPM, etc., can be researched. © 1997 Elsevier Science Ltd. All rights reserved.     

3 GPa熔融盐固体介质三轴高温压力容器的轴压摩擦力标定

 在温度标定和围压标定的基础上,采用轴压循环方法,对3 GPa固体介质三轴高温高压实验系统的轴压摩擦力进行了标定,分析了围压、温度、轴向位移速率、装样方式（盐套类型）等实验条件对轴压摩擦力的影响。结果表明：静摩擦力、挤压摩擦力和滑动摩擦力3种轴压摩擦力对轴向应力的影响不同,其中静摩擦力和挤压摩擦力对轴向应力的影响很小,影响应力精度的主要是滑动摩擦力。静摩擦力及滑动摩擦力与围压正相关;静摩擦力与轴向位移速率正相关,但受其影响较小,滑动摩擦力不受其影响;静摩擦力和滑动摩擦力与温度负相关,并且受其影响较显著;盐套类型对轴压摩擦力的影响较大,当实验条件接近盐套熔点时,轴压摩擦力显著降低,当样品周围的盐套处于熔融状态时,轴压摩擦力最小。基于此,确定了标定轴压摩擦力的具体步骤,并对角闪岩的应力-应变曲线进行了轴压摩擦力标定。对比轴压摩擦力校正前、后的应力-应变曲线发现,经过轴压摩擦力校正的应力-应变曲线能更好地反映样品的实际变形情况。