复杂网络中节点重要性排序的研究进展

如何用定量分析的方法识别超大规模网络中哪些节点最重要, 或者评价某个节点相对于其他一个或多个节点的重要程度, 这是复杂网络研究中亟待解决的重要问题之一. 本文分别从网络结构和传播动力学的角度, 对现有的复杂网络中节点重要性排序方法进行了系统的回顾,总结了节点重要性排序方法的最新研究进展, 并对不同的节点重要性排序指标的优缺点以及适用环境进行了分析, 最后指出了这一领域中几个有待解决的问题及可能的发展方向. 关键词： 复杂网络 节点重要性 网络结构 传播动力学     

量子信令中继器模型及性能仿真

为了解决量子信令远程传输损伤问题,提出了一种量子信令中继器模型. 在该模型中,首先对接收到的信令量子态进行纠缠纯化和纠缠分发,这样就可在收发双方之间建立纠缠信道. 其次,通过纠缠交换,传送所要发送的量子信令,从而完成量子信令的中继. 仿真结果表明,在保真度为0.98、纠缠对成功建立概率为0.98的条件下, 信令中继成功率可以达到97%以上;在纠缠交换概率、纯化概率和纠缠对成功建立概率都为0.98时, 量子信令中继器的吞吐量可达到183kbps,以上各项指标能够有效满足量子通信对信令中继的要求. 关键词： 量子通信 量子信令 纠缠纯化 纠缠分发     

一类具有Markov性质的混沌系统的构造

本文构造了一类具有Markov性质的分段扩张线性映射, 计算表明其具有正的李雅普诺夫指数. 通过理论分析, 证明了其极限分布是均匀分布, 并给出了其最小周期的计算公式. 通过分析符号熵测度应用于此系统时的具体涵义, 指出该系统的复杂度与系统的最小周期之间存在着矛盾关系, 说明了此系统具有可控的复杂度并给出了其复杂度随系统参数变化时的理论极限公式. 通过统计测试和复杂度测试表明, 此系统产生的混沌序列服从均匀分布, 而通过参数的调整该系统的符号熵可以接近其理论极限, 而与Logistic映射和斜帐篷映射的基于近似熵和符号熵的对比实验可知, 本文所提系统具有更高的复杂度, 并有更长的最小周期. 这表明此系统比较适合用于构造保密通信系统. 关键词： 混沌 Markov性质 复杂度 均匀分布     

Cryptanalysis and improvement of a digital image encryption method with chaotic map lattices

A digital image encryption scheme using chaotic map lattices has been proposed recently. In this paper, two fatal flaws of the cryptosystem are pointed out. According to these two drawbacks, cryptanalysts could recover the plaintext by applying the chosen plaintext attack. Therefore, the proposed cryptosystem is not secure enough to be used in the image transmission system. Experimental results show the feasibility of the attack. As a result, we make some improvements to the encryption scheme, which can completely resist our chosen plaintext attack.     

Spectral decomposition at a complex laser polarization configuration

We study the role of laser polarization in the diamagnetic spectrum for the transition from the ground state to the highly excited Rydberg states through a single photon absorption. For simplicity, one usually polarizes the irradiation laser to the selected main quantum axis, which is along the applied external electric or magnetic field. The transition selection rule is simply expressed as m = 0, which corresponds to the π transition. When the polarization is circularly polarized around the main axis, the σ+ or σ- transition occurs, corresponding to the selection rule of m = 1 or m = 1, respectively. A slightly more complex case is that the laser is linearly polarized perpendicular to the main axis. The numerical calculation shows that we can decompose the transition into the sum of σ+ and σ- transitions, it is noted as the σ transition. For the more complex case in which the laser is linearly polarized with an arbitrary angle with respect to the main axis, we have to decompose the polarization into one along the main axis and the other one perpendicular to the main axis. They correspond to π and σ transitions, respectively. We demonstrate that these transitions in the diamagnetic spectrum and the above spectral decomposition well explain the experimentally observed spectra.     

Ruby fluorescence pressure scale： Revisited

Effect of non-hydrostatic stress on X-ray diffraction in a diamond anvil cell (DAC) is studied. The pressure gradient in the sample chamber leads to the broadening of the diffraction peaks, which increase with the hkl index of the crystal. It is found that the difference between the determined d-spacing compressive ratio d/d0 and the real d-spacing compressive ratio dr/d0 is determined by the yield stress of the pressure transmitting media (if used) and the shear modulus of the sample. On the basis of the corrected experiment data of Mao et al. (MXB86), which was used to calibrate the most widely used ruby fluorescence scale, a new relationship of ruby fluorescence pressure scale is corrected, i.e., P = (1904/9.827)[(1+λ/λ0)9.827-1].     

Oscillation of coercivity between positive and negative in MnxGe1-x：H ferromagnetic semiconductor films

Amorphous MnxGe1-x :H ferromagnetic semiconductor films prepared in mixed Ar with 20% H2 by magnetron cosputtering show global ferromagnetism with positive coercivity at low temperatures. With increasing temperature, the coercivity of MnxGe1-x :H films first changes from positive to negative, and then back to positive again, which was not found in the corresponding MnxGe1-x and other ferromagnetic semiconductors before. For Mn0.4Ge0.6 :H film, the inverted Hall loop is also observed at 30 K, which is consistent with the negative coercivity. The negative coercivity is explained by the antiferromagnetic exchange coupling between the H-rich ferromagnetic regions separated by the H-poor non-ferromagnetic spacers. Hydrogenation is a useful method to tune the magnetic properties of MnxGe1-x films for the application in spintronics.     

Significant photoelectrical response of epitaxial graphene grown on Si-terminated 6H-SiC

Photoelectrical response characteristics of epitaxial graphene (EG) films on Si- and C-terminated 6H-SiC, and transferred chemical vapor deposition (CVD) graphene films on Si-terminated 6H-SiC have been investigated. The results show that upon illumination by a xenon lamp, the photocurrent of EG grown on Si-terminated SiC significantly increases by 147.6%, while the photocurrents of EG grown on C-terminated SiC, and transferred CVD graphene on Si-terminated SiC slightly decrease by 0.5% and 2.7%, respectively. The interfacial buffer layer between EG and Si-terminated 6H-SiC is responsible for the significant photoelectrical response of EG. Its strong photoelectrical response makes it promising for optoelectronic applications.     

Color-stable,reduced efficiency roll-off hybrid white organic light emitting diodes with ultra high brightness

High-brightness and color-stable two-wavelength hybrid white organic light emitting diodes (HWOLEDs) with the configuration of indium tin oxide (ITO)/ N, N, N, N-tetrakis(4-methoxyphenyl)-benzidine (MeO-TPD): tetrafluoro-tetracyanoqino dimethane (F4-TCNQ)/N,N-di(naphthalene-1-yl)-N,N-diphenyl-benzidine (NPB)/ 4,4-N,N-dicarbazolebiphenyl (CBP): iridium (III) diazine complexes (MPPZ) 2 Ir(acac)/NPB/2-methyl-9,10-di(2-naphthyl)anthracene (MADN): p-bis(p-N,N-di-phenyl-aminostyryl)benzene (DSA-ph)/bis(10-hydroxybenzo[h] quino-linato)beryllium complex (Bebq2)/LiF/Al have been fabricated and characterized. The optimal brightness of the device is 69932 cd/m2 at a voltage of 13 V, and the Commission Internationale de l'Eclairage (CIE) chromaticity coordinates are almost constant during a large voltage change of 6-12 V. Furthermore, a current efficiency of 15.3 cd/A at an illumination-relevant brightness of 1000 cd/m2 is obtained, which rolls off slightly to 13.0 cd/A at an ultra high brightness of 50000 cd/m2. We attribute this great performance to wisely selecting an appropriate spacer together with effectively utilizing the combinations of exciton-harvested orange-phosphorescence/blue-fluorescence in the device. Undoubtedly, this is one of the most exciting results in two-wavelength HWOLEDs up to now.     

Influence of focusing depth on the microfabrication of waveguides inside silica glass by femtosecond laser direct writing

We studied the influence of focusing depth on the index change threshold and damage threshold of silica glass irradiated by a focused 120 fs laser beam. Both thresholds increased with the focusing depth. The aspect ratio of the waveguide cross section can be selected by changing the focusing depth. A 5 mm long waveguide was written at the depth of 2100 μm, which was single mode at 632.8 nm and exhibited propagation loss of 0.56 dB/cm. The refractive index change was calculated to be ∼2.47×10^-3. The influence of the focusing depth should be considered in multi-layer devices as shown in the fabrication of a 3×3 waveguide array. PACS 42.62.-b; 42.82.Et; 81.05.Kf