一类具有Neumann边界条件的曲率方程解的估计

研究了一类具有Neumann边界条件的抛物方程解的性质,通过微分方法得到了一类边值问题解的估计,并得到了拟线性方程解的存在性.     

A MXene-derived redox homeostasis regulator perturbs the Nrf2 antioxidant program for reinforced sonodynamic therapy

Ultrasound (US)-mediated sonodynamic therapy (SDT) has emerged as a spatiotemporally controllable therapeutic modality in combating cancer because of its high tissue-penetration depth and minimal invasiveness. However, the elevated nuclear factor erythroid 2-related factor 2 (Nrf2) antioxidant program in cancer cells can serve as a chief reactive oxygen species (ROS) detoxification system to alleviate oxidative injury and promote tumorigenesis, and thus greatly antagonize the therapeutic efficacy of ROS-mediated anticancer therapies. Herein, we report that vanadium carbide MXene-derived carbon dots (PMQDs) can act as high-efficacy sonosensitizers to efficiently generate ROS upon US irradiation and simultaneously hinder the Nrf2 antioxidant program for enhanced sonodynamic therapy of cancer. These PMQDs show superior US-triggered ROS generating ability because of their efficient migration/separation of electron–hole pairs and narrow bandgap. Importantly, these PMQDs can serve as efficient redox homeostasis regulators to perturb the Nrf2 antioxidant mechanism and thus reduce its effects on ROS neutralization for enhanced SDT efficacy. Overall, the present study will not only provide a new paradigm to augment SDT by perturbing the Nrf2 antioxidant program, but also give valuable insights into developing high-efficacy MXene-derived nanoagents for cancer therapy.

A redox homeostasis regulator has been developed as a high-efficacy sonosensitizer to efficiently generate reactive oxygen species upon ultrasound irradiation and simultaneously hinder the Nrf2 antioxidant program for enhanced sonodynamic therapy.     

Dynamic Variation of Amino Acid Contents and Identification of Sterols in Xinyang Mao Jian Green Tea

As important biomolecules in Camellia sinensis L., amino acids (AAs) are considered to contribute to the overall green tea sensory quality and undergo dynamic changes during growth. However, limited by analytical capacity, detailed AAs composition in different growth stages remains unclear. To address this question, we analyzed the dynamic changes of 23 AAs during leaf growth in Xinyang Mao Jian (XYMJ) green tea. Using amino acid analyzer, we demonstrated that most AAs are abundant on Pure Brightness Day and Grain Rain Day. After Grain Rain, 23 AAs decreased significantly. Further analysis shows that theanine has a high level on the day before Spring Equinox and Grain Rain, accounting for 44–61% of the total free AAs content in tea leaves. Glu, Pro, and Asp are the second most abundant AAs. Additionally, spinasterol and 22,23-dihydrospinasterol are first purified and identified in ethanol extract of XYMJ by silica gel column chromatography method. This study reveals the relationship between plucking days and the dynamic changes of AAs during the growth stage and proves the rationality of the traditional plucking days of XYMJ green tea.     

前驱体法制备氮氧化硅纳米线及其光学性能研究

在Ni催化剂的存在下,通过SiCl4的水解氨解反应并在1300℃氨气气氛中进行热氮化处理制得了无定形氮氧化硅纳米线.产物经X射线衍射(XRD)、热重-差示扫描量热(TG-DSC)、扫描电镜(SEM)、透射电镜(TEM)、能量色散谱(EDS)和选区电子衍射(SAED)等表征手段进行分析,结果表明纳米线为无定形结构,直径为100～150nm.在波长为220nm的光激发下,产物的光致发光光谱(PL)在563nm和289nm处分别出现了一个强的绿光发光峰和一个弱的紫光发光峰.对纳米线的生长机理进行分析,表明纳米线的生长遵循气-液-固(VLS)机制控制模式.     

陶瓷材料疏水性能的研究进展

本文简述了疏水性表面的基本原理,分别从低表面能物质修饰和表面微细粗糙结构的构建两个方面,对疏水性陶瓷材料的制备技术和最新的成果进行了总结,介绍了其潜在的应用并对未来的研究方向作了展望.     

3英寸6H-SiC单晶的生长

SiC是宽带隙半导体材料的典型代表,具有优良的热学、力学、化学和电学性质,不但可以用作基于GaN的蓝色发光二极管的衬底材料,同时又是制作高温、高频、大功率电子器件的最佳材料之一,因此高质量、大直径SiC单晶的生长一直是材料研究领域的热点课题。目前美国的Cree公司在SiC单晶生长领域研发方面起步早、投入大,SiC单晶的直径达到4英寸,处于领先地位。我国在“十五”期间投入了一定的人力、物力进行了SiC单晶生长的研究,在生长2英寸SiC单晶的工作中取得了一定的成绩[1],但更大直径的SiC单晶生长技术进展缓慢,至今未见国内报道。而对…     

工作气压对磁控溅射ITO薄膜性能的影响

工作气压在ITO薄膜的制备过程中是一个重要的工艺参数,直接决定着薄膜的性能.本文利用射频磁控溅射方法,采用氧化铟锡陶瓷靶材,在衬底温度为175℃,工作气压范围为0.45～1.0 Pa条件下,制备了氧化铟锡透明导电薄膜.研究了工作气压对其微观结构、表面形貌和光电特性的影响.在衬底温度为175℃、纯氩气中制备的氧化铟锡薄膜电阻率为3.04 ×10-4 Ω·cm、可见光波段(400～800 nm)透过率为91.9;,适合用作异质结太阳电池的前电极和减反射膜.     

6H-SiC衬底片的表面处理

相比于蓝宝石,6H-SiC是制作GaN高功率器件更有前途的衬底.本文研究了表面处理如研磨、化学机械抛光对6H-SiC衬底表面特性的影响.用显微镜、原子力显微镜、拉曼光谱、卢瑟福背散射谱表征了衬底表面.结果表明经过两步化学机械抛光后提高了表面质量.经第二步化学机械抛光后的衬底具有优异的表面形貌、高透射率和极小的损伤层,其表面粗糙度RMS是0.12nm.在该衬底上用MOCVD方法长出了高质量的GaN外延膜.     

Fe3+对KDP晶体光学质量的影响

金属离子Fe3+对KDP晶体的生长和光学性质有明显影响.本文在前期研究的基础上[1]系统考察了该杂质离子对KDP晶体光学质量的影响.实验结果表明,三价金属离子Fe3+会降低KDP晶体的透光率,同时对晶体均匀性和光损伤阈值也有明显影响.光损伤阈值降低的主要原因在于杂质诱发缺陷导致的电子崩电离、多光子电离(尤其是双光子电离)等过程的发生.     

Er3+:NaY(Wo.9Moo.1O4)2晶体的生长及光谱性能

采用提拉法(CZ法),生长出质量良好的Er3+:NaY(W0.9Mo0.1O4)2晶体.通过X射线粉末衍射,红外光谱分析,并与NaY(WO4)2相比较,得到Er3+:NaY(W0.9Mo0.1O4)2晶体的结构与NYW类似,仍为四方晶系的白钨矿结构,I4(1)/α空间群.测定了晶体的实际组成,得到晶体中各元素均按理论值进行掺杂,计算了掺杂离子的分凝系数约为1.15.在光谱性质上,测试了晶体的吸收光谱,及晶体在50～1000cm-1波数范围内的拉曼光谱,并计算了各吸收峰的半峰宽及吸收系数A.