Effects of Si doping on the structural and electrical properties of Ge2Sb2Te5 films for phase change random access memory

The effects of Si doping on the structural and electrical properties of Ge₂Sb₂Te₅ film are studied in detail. Electrical properties and thermal stability can be improved by doping small amount of Si in the Ge₂Sb₂Te₅ film. The addition of Si in the Ge₂Sb₂Te₅ film results in the increase of both crystallization temperature and phase-transition temperature from face-centered cubic (fcc) phase to hexagonal (hex) phase, however, decreases the melting point slightly. The crystallization activation energy reaches a maximum at 4.1 at.% and then decreases with increasing dopant concentration. The electrical conduction activation energy increases with the dopant concentration, which may be attributed to the increase of strong covalent bonds in the film. The resistivity of Ge₂Sb₂Te₅ film shows a significant increase with Si doping. When doping 11.8 at.% of Si in the film, the resistivity after 460 °C annealing increases from 1 to 11 mΩ cm compared to the undoped Ge₂Sb₂Te₅ film. Current-voltage (I-V) characteristics show Si doping may increase the dynamic resistance, which is helpful to writing current reduction of phase-change random access memory.     

Effect of end groups on complexation kinetics between cyclodextrins and guest polymers

α‐Cyclodextrin (α‐CD) has been complexed with various poly(ethylene glycol) (PEG) derivatives in aqueous solution. It has been found that the end groups of PEG derivatives affect the complexation kinetics greatly, but have only a little influence on the thermodynamic behavior. By increasing the hydrophobicity of end groups, the complexation speeds up rapidly. On the other hand, the bulky end groups slow down the threading of polymeric guests into the cavity of CD. By changing the hydrophobicity and the size of end groups, the complexation rate can be adjusted in the range of several orders of magnitudes, which should be quite useful in the design of new supramolecular systems. © 2006 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 44: 2050–2057, 2006     

Sn-C60薄膜的紫外吸收光谱和X-射线衍射谱分析

对Sn-C60薄膜进行紫外可见光吸收，X-射线衍射和扫描电镜的测定结果显示，薄膜样品紫外可见光吸收的两个短波段吸收峰比纯C60薄膜的吸收峰显著下降，说明Sn-C60薄膜的电子光吸收跃迁为间接跃迁，能带中有杂质能级的存在；样品的X射线衍射峰则对应于面心立方结构；扫描电镜结果显示薄膜为纳米级颗粒组成。     

CP violation and extra dimensions

It is shown that new sources of CP violation can be generated in models with more than one extra dimension. In the supersymmetric models on the space-time , where the radius moduli have auxiliary vacuum expectation values and the supersymmetry breaking is mediated by the Kaluza–Klein states of the gauge supermultiplets, we analyze the gaugino masses and trilinear couplings for two scenarios and obtain the result that there exist relative CP violating phases among the gaugino masses and trilinear couplings. Received: 10 October 2001 / Published online: 20 December 2001     

液体可视图象序列中杂质小目标的检测方法

在分析红外图象和视图象差异的基础上，研究了一种适用于可视图像序列的运动小目标检测算法。受目标影响的象素点具有较弱的时间相关性，即相对普通象素点有较大的时间方差，根据此特征，用管道更新的方法产生新方差图象序列，再用管道更新的方法累积，增加信噪比，然后用基于统计均值的自适应门限方法分割出目标，最后将原图象的梯度倒数作为象素点强度的加权，有效地抑制灰度突变边界的传感器噪音，保存目标点。     

有界连通区域上Dirichlet空间及其算子

本文主要讨论了有界连通区域Dirichlet空间上Toeplitz算子的Fredholm性质,计算了符号在C1中的Toeplitz算子的本性谱和Fredholm指标．     

Spectrum Simulation of Li-Like Aluminium Plasma

X-ray emission spectra for L-shell of Li-like aluminium ions are simulated by using the flexible atomic code based on the collisional radiative model. Atomic processes including radiative recombination, dielectronic recombination, collisional ionization and resonance excitation from the neighbouring ion （Al^9＋ and Al^11＋ ） charge states of the target ion （Al^10＋） are considered in the model. In addition, the contributions of different atomic processes to the x-ray spectrum are analysed. The results show that dielectronic recombination, radiative recombination, collisional ionization and resonance excitation, other than direct collisional excitation, are very important processes.     

Comparison of the boundary theory with the contact rule of phase regions and Gupta’s method

The phase boundary theory and the contact rule of phase regions are compared, and some weaknesses of the latter are manifested. The comparison between the Gupta’s method and the boundary theory method for constructing multicomponent isobaric sections is also presented.     

感性与理性的和谐统一--构建和谐课堂的点滴体会

1感性认识与理性认识的和谐统一 在教育理念不断更新发展的今天，有一个新的课堂环境和课堂教学理念，是每一个教育工作者自身发展的一项重要任务．特别是在高中物理学科的课堂教学中，构建人与自然的和谐统一，就要从身边的自然环境出发，立足于感性认识为本，再升华为理性认识，把二者有机结合起来，才能让学生获得一个情感与理论上的和谐统一，提高学生对物理学科的浓厚兴趣．     

Enumeration of perfect matchings of a type of Cartesian products of graphs

Let G be a graph and let Pm(G) denote the number of perfect matchings of G.We denote the path with m vertices by P_m and the Cartesian product of graphs G and H by G×H. In this paper, as the continuance of our paper [W. Yan, F. Zhang, Enumeration of perfect matchings of graphs with reflective symmetry by Pfaffians, Adv. Appl. Math. 32 (2004) 175-188], we enumerate perfect matchings in a type of Cartesian products of graphs by the Pfaffian method, which was discovered by Kasteleyn. Here are some of our results:1. Let T be a tree and let C_n denote the cycle with n vertices. Then Pm(C₄×T)=∏(2+α²), where the product ranges over all eigenvalues α of T. Moreover, we prove that Pm(C₄×T) is always a square or double a square.2. Let T be a tree. Then Pm(P₄×T)=∏(1+3α²+α⁴), where the product ranges over all non-negative eigenvalues α of T.3. Let T be a tree with a perfect matching. Then Pm(P₃×T)=∏(2+α²), where the product ranges over all positive eigenvalues α of T. Moreover, we prove that Pm(C₄×T)=[Pm(P₃×T)]².