Inverse Process with Independent Positive Increments: Finite-Dimensional Distributions

An inverse process with independent positive increments is considered. For such a process, the first hitting time τ_x of level x as a function of x ≥ 0 is a proper process with independent positive increments. In terms of first hitting times and their Levy measures, multidemensional distribution densities and Laplace transformations are derived. Stationary distributions of increments of the process are investigated. Bibliography: 8 titles. __________ Translated from Zapiski Nauchnykh Seminarov POMI, Vol. 311, 2004, pp. 286–297.     

Effective field and the Bloch-Siegert shift at bichromatic excitation of multiphoton EPR

The dynamics of multiphoton transitions in a two-level spin system excited by transverse microwave and longitudinal RF fields with the frequencies ω_mw and ω_rf, respectively, is analyzed. The effective time-independent Hamiltonian describing the “dressed” spin states of the “spin + bichromatic field” system is obtained by using the Krylov-Bogoliubov-Mitropolsky averaging method. The direct detection of the time behavior of the spin system by the method of nonstationary nutations makes it possible to identify the multiphoton transitions for resonances ω₀ = ω_mw + rω_rf (ω₀ is the central frequency of the EPR line, r = 1, 2), to measure the amplitudes of the effective fields of these transitions, and to determine the features generated by the inhomogeneous broadening of the EPR line. It is shown that the Bloch-Siegert shifts for multiphoton resonances at the inhomogeneous broadening of spectral lines reduce only the nutation amplitude but do not change their frequencies.     

Influence of Azimuthal Structure of Surface Waves on Efficiency of their Excitation by Tubular Electron Beams

The excitation of eigen surface waves by tubular electron beams in cylindrical discharge devices is studied. The influence of the wave‐field azimuthal structure on the excitation efficiency and nonlinear stage of the plasmabeam instability is investigated both numerically and analytically. Analytical expressions for the saturation amplitude and excitation efficiency of the wave under study are derived. They are found to agree well with results obtained by numerical modelling of the plasma‐beam interaction presented in this paper. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Method of lines with boundary elements for 1‐D transient diffusion‐reaction problems

Time‐dependent differential equations can be solved using the concept of method of lines (MOL) together with the boundary element (BE) representation for the spatial linear part of the equation. The BE method alleviates the need for spatial discretization and casts the problem in an integral format. Hence errors associated with the numerical approximation of the spatial derivatives are totally eliminated. An element level local cubic approximation is used for the variable at each time step to facilitate the time marching and the nonlinear terms are represented in a semi‐implicit manner by a local linearization at each time step. The accuracy of the method has been illustrated on a number of test problems of engineering significance. © 2005 Wiley Periodicals, Inc. Numer Methods Partial Differential Eq 2006     

Roles of SiH4 and SiF4 in growth and structural changes of poly-Si films

The structural properties of polycrystalline silicon films, prepared by plasma enhanced chemical vapor deposition system, with different flow rates of SiH₄/SiF₄ mixtures at 300 °C were investigated. This study indicates that the low hydrogen coverage on the growing surface, under optimum fluorine radicals, will be leaded to an improvement of crystallized area as compared with case of high hydrogen coverage surface. Moreover, the studies of the role of SiH₄ and SiF₄ radicals show that the SiH₄ radicals are important in the nucleation and growth of grains. However, SiF₄ radicals are effective in the structural change of grain boundaries regions and by this way, in the present system, establish the growth of grains under the dominant 〈1 1 0〉 direction. The stress investigation indicates that addition of high flow rate of SiF₄ in amorphous film, results in the nearly stress free films. Finally, we found that the changes in g-value reflect the changes in the intrinsic compressive and tensile stress in the both polycrystalline and amorphous silicon films.     

An evolution operator in semiclassical electrodynamics

An evolution operatior is described, which acts on the operators of a problem to take it into the solutions of the corresponding problem of semiclassical electrodynamics.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 12, pp. 66–69, November, 1981.     

Cytotoxic acetylenes from Panax quinquefolium

Three new cytotoxic polyacetylenes, PQ-1 (1), PQ-2 (2) and PQ-3 (3), have been isolated from Panax quinquefolium. The structures of these acetylenes were determined by analyses of their 1H-1H and 1H-13C COSY spectra. All these compounds exhibited strong cytotoxic activities against leukemia cells (L 1210) in tissue culture.     

Nonlinear electric dipole polarizations of centrosymmetric media at the interaction of fundamental and second harmonic waves

Dominant nonlinear electric dipole polarizations at the interaction of fundamental and second harmonic waves in centrosymmetric media without and with memory are treated in this paper. The process of forming a permanent spatially periodic quadratic susceptibility grating in the medium with memory is described from the phenomenological point of view.Dedicated to the Czechoslovak Student Movement '89.     

Solving the problem of contact equilibrium of a punch and an elastic body

The variational problem of contact equilibrium of a punch and an elastic body is considered. An equivalent formulation of the problem is given in variational inequality form. Existence and uniqueness of the solution is investigated in a particular case. A penalty method is proposed for approximate solution of the problem.Translated from Vychislitel'naya i Prikladnaya Matematika, No. 56, pp. 97–103, 1985.