Microstructure, hydrogenation and optical behavior of Mg-Ni multilayer films deposited by magnetron sputtering

Mg-Ni multilayer films with sequential Mg and Ni layers were prepared by direct current magnetron sputtering. The substrate temperature influences the microstructure of the films greatly. The film deposited at 298 K exhibits multilayered structure, while the film shows nanocrystalline/amorphous composite structure at the deposition temperature of 473 K. The optical properties between hydrogenation/dehydrogenation states of the films were performed using spectrophotometer in visible light region. The film deposited at 473 K can switch from mirror-like metallic state towards brownish yellow transparent state under 0.6 MPa H₂ at 298 K, and the optical transmittance modulation reaches up to 20% both at a wavelength of 770 nm and IR region, while the film deposited at 298 K exhibits low optical change, and the optical switching behavior can hardly be found. The extra free energy stored in the boundary of the nanocrystallines benefits the formation of magnesium-based hydride, resulting in the enhancement of the optical switching properties of the Mg-Ni film deposited at 473 K.     

Investigation of electronic structure of Nd-doped TiO2 nanoparticles using synchrotron radiation photoelectron spectroscopy

Doping with transition metal ions in TiO₂ has been found effective to modify the electronic structure of TiO₂ nanoparticles. Application of synchrotron radiation photoelectron spectroscopy (SRPES) to Nd-doped TiO₂ nanoparticles revealed that there existed different peak positions and structure with different doping concentration in the valence band spectra. From the onset of valence band spectrum, it was observed that doping Nd ions alters the electronic structure and makes the band gap of TiO₂ narrow.     

NSR催化剂12CaO-7Al2O3/10%K中水对NO还原性能的影响

主要讨论在不同反应温度和不同水蒸汽浓度下,新型的NOx储存-还原催化剂12CaO·7Al2O3／10％K(简称C12A7／K)中水的存在对NO还原性能的影响．研究结果表明,当存在1．2％水蒸汽,并低于500℃时,NO转化率和N2的选择性均降低,水蒸汽的存在对催化剂低温区的活性起到较明显的抑制作用;而温度高于500℃时,此抑制作用则基本消失,说明此时C12A7／K催化剂的水热稳定性较好．FT-IR结果证明储存NOx后的C12A7／K样品小形成了NO3／NO2的反应中间物种,用H2还原则可消除中间物种,以N2等形式放出。     

抽运-检测型非线性磁光旋转铷原子磁力仪的研究

报道了一种抽运-检测型的非线性磁光旋转铷原子磁力仪.其原理是线偏振光通过处于外磁场环境中被极化的原子介质后,由于原子对线偏振光中左、右圆偏成分不同的吸收和色散,导致光的偏振方向会产生与磁场相关的转动.分析了该磁力仪的工作原理,并测试了它对不同磁场大小的响应.测试结果表明,磁力仪测量范围为100—100000 nT,极限灵敏度为0.2 p T/Hz~(1/2),磁场分辨率为0.1 p T.进一步研究了不同磁场下原子系综极化态的横向弛豫时间,讨论了原子磁力仪高磁场采样率的获得方法.本文的原子磁力仪在5000—100000 n T的磁场测量范围内磁场采样率可实现1—1000 Hz范围内可调,能够测量低频的微弱交变磁场.本文的研究内容为大磁场测量范围、高灵敏度、高磁场采样率的原子磁力仪研制提供了重要参考.     

交联聚苯乙烯的太赫兹光谱特性

交联聚苯乙烯是一种热固性塑料,具有优异的介电特性和耐高压击穿能力等特性。采用基于太赫兹波空气电离相干探测法(THz-ABCD)的太赫兹时域光谱系统,测量了交联聚苯乙烯和聚苯乙烯样品在太赫兹的光谱特性,得到了其在2~13 THz频段的吸收系数、折射率等光学参数。研究结果表明：交联聚苯乙烯和聚苯乙烯的吸收谱形状相似,在6.6,9.8和12.25 THz等处存在多个吸收峰,但是交联聚苯乙烯的吸收系数在12 THz以下高于聚苯乙烯,在12 THz以上低于聚苯乙烯;交联聚苯乙烯的折射率高于聚苯乙烯,聚苯乙烯的折射率在1.58~1.59之间,交联聚苯乙烯的折射率在1.59~1.62之间。     

Chiral plasmonic nanostructure of twistedly stacked nanogaps

Nanogap plasmonic structures with strong coupling between separated components have different responses to orthogonal-polarized light, giving rise to giant optical chirality. Here, we proposed a three-dimensional(3D) nanostructure that consists of two vertically and twistedly aligned nanogaps, showing the hybridized charge distribution within 3D structures.It is discovered that the structure twisted by 60° exhibits plasmonic coupling behavior with/without gap modes for different circular-polarized plane waves, showing giant chiral response of 60% at the wavelength of 1550 nm. By controlling the disk radius and the insulator layer, the circular dichroism signal can be further tuned between 1538 and 1626 nm.     

浅水声速剖面用经验正交函数(EOF)表示的可行性研究

本文研究利用经验正交函数（Ｅ０Ｆ）及少量参数以近似表示实测浅水声速剖面的方法,研究了样本数,不同浅水域的样杜和算法的关系,并得出结论：一定区域的浅水声速剖面,以经验正交函数（Ｅ０Ｆ）近似表示,仍可以达到较好的精度,这对于声场层析及被动定位总理２有着很重要的意义。     

Layered MoS2 grown on c ‐sapphire by pulsed laser deposition

Layered growth of molybdenum disulphide (MoS₂) was successfully achieved by pulsed laser deposition (PLD) method on c ‐plane sapphire substrate. Growth of monolayer to a few monolayer MoS₂, dependent on the pulsed number of excimer laser in PLD is demonstrated, indicating the promising controllability of layer growth. Among the samples with various pulse number deposition, the frequency difference (A_1g–E¹_2g) in Raman analysis of the 70 pulse sample is estimated as 20.11 cm^–1, suggesting a monolayer MoS₂ was obtained. Two‐dimensional (2D) layer growth of MoS₂ is confirmed by the streaky reflection high energy electron diffraction (RHEED) patterns during growth and the cross‐sectional view of transmission electron microscopy (TEM). The in‐plane relationship, (0006) sapphire//(0002)MoS₂and sapphire//MoS₂ is determined. The results imply that PLD is suitable for layered MoS₂ growth. Additionally, the oxide states of Mo 3d core level spectra of PLD grown MoS₂, analysed by X‐ray photoelectron spectroscopy (XPS), can be effectively reduced by adopting a post sulfurization process. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

基于超声RF信号的甲状腺结节智能诊断方法*

由于人口老龄化的原因,甲状腺癌的发病率增长率在所有癌症中是最为显著的。因此,对存在癌变可能的甲状腺结节进行预检查显得尤为重要,而超声智能诊断系统在甲状腺结节早期筛查方面已展现出巨大的应用前景。该文的工作旨在提出一种基于超声原始射频信号的组织参数定征和人工神经网络相结合的甲状腺结节智能诊断方法,以提高临床超声诊察效率及准确性。为达成上述目的,该文使用滑动窗口图像分析方法和多兴趣区覆盖的方法提取组织定征参数作为特征,使用人工神经网络进行良恶性分类,并对可能影响分类准确性的相关因素进行参数相关性分析。结果显示,基于临床样本,该文提出的智能诊断方法可达到93.2%敏感度、94.0%特异性和93.5%准确率。该方法一定程度上克服了传统方法无法充分利用图像局部细节信息的不足,有效提高了诊察效率和准确性;另一方面,与深度神经网络相比,本方法对计算资源和样本量的需求较少。因此有望在该文研究基础上最终建立一套可实际用于甲状腺结节的预筛查的临床智能诊断系统。     

Large-scale chemical vapor deposition growth of highly crystalline MoS2 thin films on various substrates and their optoelectronic properties

Large-scale growth of mostly monolayer molybdenum disulfide (MoS₂) on quartz, sapphire, SiO₂/Si, and waveguide substrates is demonstrated by chemical vapor deposition with the same growth parameters. Centimeter-scale areas with large flakes and films of MoS₂ on all the growth substrates are observed. The atomic force microscopy and Raman measurements indicate the synthesized MoS₂ is monolayer with high quality and uniformity. The MoS₂ field effect transistors based on the as-grown MoS₂ exhibit carrier mobility of 1–2 cm²V^?1s^?1 and On/Off ratio of ~10⁴ while showing large photoresponse. Our results provide a simple approach to realize MoS₂ on various substrates for electronics and optoelectronics applications.