Compatibility and Marginality

We present a way of introducing joint distibution function and its marginal distribution functions for non-compatible observables. Each such marginal distribution function has the property of commutativity. Models based on this approach can be used to better explain some classical phenomena in stochastic processes.     

合肥光源二分割三角型光位置检测器的研制

介绍了一种用于合肥光源的二分割三角型光位置检测器的研制,对其主要性能(如灵敏度和线性范围)进行了理论分析和实际测量,测量结果与理论分析相当吻合.文中还给出了光位置测量系统的组成     

Hermitian阵的 Hadamard积的Schur补的一些不等式（英文）

本文得到了正定Hermitian阵的Hadamard积的Schur补的一些不等式，进而，给出了他们的一些应用，这些改进了近期的一些结束．     

等效法在伏安法测量中的应用

本文提出了在伏安法测量中，消除电表内阻对实验结果影响的一种新方法     

锡(Ⅳ)-偶氮邻苯二酚苯基荧光酮-吐温-80体系分光光度法测定岩石中微量锡

pH值在7.0-8.5的范围内，锡与偶氮邻苯二酚苯基荧光酮、吐温－80形成络合物，其最大吸收峰556nm，摩尔吸光系数2.9×10^5L·mol^-1·cm^-1，锡的含量在0－6μg/25mL范围内遵守比耳定律，本方法对干扰离子的影响和消除进行了研究，本方法已被用于岩石样中锡的测定，结果满意。     

La1-xPrxMnO3(x=0.1,0.2)薄膜庞磁电阻性质的研究

一种新的庞磁电阻氧化物薄膜La1-xPrxMnO3(x=0.1,0.2)薄膜用脉冲激光沉积(PLD)方法生长在(100)SrTiO3单晶基底上.XRD结果显示薄膜具有很好的外延单晶取向.电输运和磁性质的研究表明薄膜具有显著的庞磁电阻效应(CMR)效应,其中磁电阻比率达95%(在5T的磁场下).X射线光电子能谱(XPS)的结果表明薄膜体系中Pr离子的价态为+4价,因此该薄膜很可能是电子掺杂的庞磁电阻体系.     

Flicker noise in degenerately doped Si single crystals near the metal-insulator transition

In this paper we report some of the important results of experimental investigations of the flicker noise near the metal-insulator (MI) transition in doped silicon single crystals. This is the first comprehensive work to study low-frequency noise in heavily doped Si over an extensive temperature range (2 K<T<500 K). The measurements of conductance fluctuations (flicker noise) were carried out in the frequency range 10⁻²<f<4 × 10¹ Hz in single crystalline Si across the MI transition by doping with phosphorous and boron. The magnitude of noise in heavily doped Si is much larger than that seen in lightly doped Si over the whole temperature range. The extensive temperature range covered allowed us to detect two distinct noise mechanisms. At low temperatures (T<100 K) universal conductance fluctuations (UCF) dominate and the spectral dependence of the noise is determined by dephasing the electron from defects with two-levels (TLS). At higher temperatures (T>200 K) the noise arises from activated defect dynamics. As the MI transition is approached, the 1/f spectral power, typical of the metallic regime, gets modified by the presence of discrete Lorentzians which arise from generation-recombination process which is the characteristic of a semiconductor.     

Equitable Total Coloring of Graphs with Maximum Degree 3

 The equitable total chromatic number χr d q u o; _e (G) of a graph G is the smallest integer k for which G has a total k-coloring such that the number of vertices and edges in any two color classes differ by at most one. We prove in this paper that χr d q u o; _e (G)≤5 if G is a multigraph with maximum degree at most 3. Received: February 24, 2000 Final version received: February 2, 2001 Acknowledgments. The author would like to thank the referee for valuable suggestions to improve this work.     

Nest代数上的在零点广义可导映射

设A为B（H）的子代数,　是A到B（H）的线性映射,我们说　在0点广义可导（广义双边可导）,如果对任意的S,T∈A且ST=0（ST=0或TS=0）,有　（ST）=　（S）T+S　（T）-S　（I）T.本文主要得到如下结果:（1）有限Nest代数上的每个范数拓扑连续的在0点广义可导的线性映射是广义内导子;（2）若N是完备Nest且H_　 H,则algN上的每个范数拓扑连续的在0点广义双边可导的线性映射是广义内导子.