(Anti-)de Sitter Black Hole Entropy and Generalized Uncertainty Principle

We generalize the method that is used to study corrections to Cardy-Verlinde formula due to generalized uncertainty principle and discuss corrections to Cardy-Verlinde formula due to generalized uncertainty principle in (anti)-de Sitter space. Because in de Sitter black hole spacetime the radiation temperature of the black hole horizon is different from the one of the cosmological horizon, this spacetime is a thermodynamical non-equilibrium spacetime.     

Oxidation process of SiGe on SOI substrates

The oxidation of SiGe film epitaxial grown on top of SOI wafers has been studied. These SiGe/SOI samples were oxidized at 700, 900, 1100 °C. Germanium atoms were rejected from SiGe film to SOI layer. A new Si_1−xGe_x (x is minimal) layer formed at SiGe/Si interface. As the germanium atoms diffused, the new Si_1−xGe_x (x is minimal) layer moved to Si/SiO₂ interface. Propagation of threading dislocation in SiGe film to SOI substrate was hindered by the new SiGe/Si interface. Strain in SOI substrate transferred from SiGe film was released through dislocation nucleation and propagation inner. The relaxation of SiGe film could be described as: strain relaxed through strain equalization and transfer process between SiGe film and SOI substrates. Raman spectroscopy was used to characterize the strain of SiGe film. Microstructure of SiGe/SOI was observed by transmission electron microscope (TEM).     

Clifford分析中无界域上正则函数的边值问题

在引入修正Cauchy核的基础上,讨论了无界域上正则函数的带共轭值的边值问题：a(t)Φ (t) b(t)Φ (t) c(t)Φ-(t) d(t)Φ=g(t)．首先给出了无界域上正则函数的Plemelj公式,然后利用积分方程方法和压缩不动点原理证明了问题解的存在唯一性．     

考虑货架存放期的经济批量排产问题的求解

在化工、造纸、制药、钢铁等工业生产中，一台设备或一条生产线可以生产多种产品的情况很常见。在生产中，如何安排各类产品的生产顺序以及生产数量显得十分重要。这类问题通常称作经济批量排产问题，这类问题是生产库存中的经典问题。本文研究的经济批量排产问题考虑了产品货架存放期因素，针对以往研究的不足，本文提出用批量变动方法求解该类问题，由计算结果显示，按照这种排产方法花费的成本要低于其他两种经济批量排产问题常用的方法。     

仓库容量有限条件下的随机存贮管理问题的评注

给出2005年全国部分高校研究生数学建模竞赛D题的研究背景,对参赛论文作了简要评注,并提供了一种参考解答.     

猜想M(2k,k+1)=3k-1+[(k-1)/2]的反例

Brualdi与Jung在[1]中研究了一类具有固定线和k的n×n矩阵上的最大跳跃数M(n,k),并提出猜想M(2k, k + 1) = 3k - 1 + [(k-1)/2].本文给出了这一猜想的两个反例．     

一类拟线性椭圆方程边值问题弱解的研究

本文应用上、下解方法和 Leray-Schauder不动点定理 ,证明了一类拟线性椭圆方程边值问题弱解的存在性 ,并且给出了一个应用实例     

Structural evolution in amorphous silicon and germanium thin films.

The structural evolution in amorphous silicon and germanium thin films has been investigated by high-resolution transmission electron microscopy (HRTEM) in conjunction with autocorrelation function (ACF) analysis. The results established that the structure of as-deposited semiconductor films is of a high density of nanocrystallites embedded in the amorphous matrix. In addition, from ACF analysis, the structure of a-Ge is more ordered than that of a-Si. The density of embedded nanocrystallites in amorphous films was found to diminish with annealing temperature first, then to increase. The conclusions also corroborate well with the results of diminished medium-range order in annealed amorphous films determined previously by a variable coherence microscopy method.     

NA列加权乘积和的完全收敛性

本文讨论了NA和几类加权部分和及加权乘积和的完全收敛性，其中部分结果要优于iid列的已知结论。     

On crepant resolution of some hypersurface singularities and a criterion for UFD

In this article, we find some diagonal hypersurfaces that admit crepant resolutions. We also give a criterion for unique factorization domains.