高辐射效率超宽谱脉冲辐射天线的设计与实验

设计了一种采用共面TEM馈电结构的抛物反射面超宽谱脉冲辐射天线,分析了该种馈电结构的阻抗特性与辐射特性。实验表明当馈入电压为3kV、前沿180ps的超宽谱脉冲时,该天线主轴辐射场测试距离与峰值场强之积平均值达到18.3kV,相较于常用的TEM喇叭馈电的超宽带反射面天线,其辐射效率有了显著的提高。     

Microwave-assisted synthesis of Cu2ZnSnS4 nanocrystals as a novel anode material for lithium ion battery

One-dimensional ordered quantum-ring chains are fabricated on a quantum-dot superlattice template by molecular beam epitaxy. The quantum-dot superlattice template is prepared by stacking multiple quantum-dot layers and quantum-ring chains are formed by partially capping quantum dots. Partially capping InAs quantum dots with a thin layer of GaAs introduces a morphological change from quantum dots to quantum rings. The lateral ordering is introduced by engineering the strain field of a multi-layer InGaAs quantum-dot superlattice.     

Quantum interference induced by initial system–environment correlations

We investigate the quantum interference induced by a relative phase in the correlated initial state of a system which consists in a two-level atom interacting with a damped mode of the radiation field. We show that the initial relative phase has significant effects on both the evolution of the atomic excited-state population and the information flow between the atom and the reservoir, as quantified by the trace distance. Furthermore, by considering two two-level atoms interacting with a common damped mode of the radiation field, we highlight how initial relative phases can affect the subsequent entanglement dynamics.     

The structure and optical characters of the ZnO film grown on GaAs/Al2O3 substrate

In this paper ZnO films are grown on GaAs/Al₂O₃ substrates at different temperature by metal-organic chemical vapor deposition (MOCVD). The GaAs/Al₂O₃ substrates are formed by depositing GaAs layer (∼35 nm) on the Al₂O₃ substrate. The results of X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) demonstrate that most of the Ga and As atoms form Ga-As bond and the GaAs layer does not present any orientation. The characters of the ZnO films grown on GaAs/Al₂O₃ substrates are investigated by XRD, photoluminescence (PL), atomic force microscopy (AFM) and Raman scattering. Compared with ZnO film grown on Al₂O₃ substrate, ZnO film prepared by our fabrication scheme has good crystal and optical quality. Meanwhile its grain size becomes bigger according to the AFM image. Raman analysis indicates that the intrinsic defects and the in-plane tensile stress are obviously reduced in ZnO/GaAs/Al₂O₃ samples.     

Characteristics of xenon-lamp pumped pyrromethene 567-doped dye laser based on polymethylmethacrylater

The solid-state medium containing pyrromethene 567 (PM567) in a polymethylmethacrylate polymer host is shown to lase under the flash lamp excitation. The experimental setup is an ordinary industrial product without special design. The bulk transmission losses, the output energy, and the other lasing properties are compared. The medium with the lowest transmission loss, measured to be 0.392 %/cm at 633 nm, gives a laser output of 130 mJ with a slope efficiency of 0.082%.     

隐-显积分因子间断Galerkin方法求解二维辐射扩散方程

提出一种求解二维非平衡辐射扩散方程的数值方法.空间离散上采用加权间断Galerkin有限元方法,其中数值流量的构造采用一种新的加权平均;时间离散上采用隐-显积分因子方法,将扩散系数线性化,然后用积分因子方法求解间断Galerkin方法离散后的非线性常微分方程组.数值试验中在非结构网格上求解了多介质的辐射扩散方程.结果表明:对于强非线性和强耦合的非线性扩散方程组,该方法是一种非常有效的数值算法.     

Dark pulse generation in a dispersion-managed fiber laser

We report an experimental observation of dark pulse generation in a dispersion-managed erbium-doped fiber laser with net anomalous cavity group-velocity dispersion. It is found that apart from the bright soliton pulses, dark pulses with spectral sidebands could be obtained in the laser under appropriate operating conditions. The generation of dark pulses may be attributed to soliton shaping in the cavity.     

Improved λ/4 phase-shifted DFB semiconductor laser with spatial hole burning compensation using grating chirp

A λ/4 phase-shifted distributed feedback (DFB) semiconductor laser with a preformed chirped grating used to compensate the spatial hole burning (SHB) induced index change is proposed and analyzed. It shows that compared with the three phase shifted DFB laser which is known for its good performance to eliminate SHB, the proposed SHB compensated laser has better single longitudinal mode property, narrower spectral linewidth and better dynamic characteristics.     

Preparation of Nd-doped BiFeO3 films and their electrical properties

The Nd-doped BiFeO₃ thin films were prepared on SnO₂(FTO) substrates spin-coated by the sol–gel method using Nd(NO₃)₃·6H₂O, Fe(NO₃)₃·9H₂O and Bi(NO₃)₃·5H₂O as raw materials. The microstructure and electric properties of the BiFeO₃ thin films were characterized and tested. The results indicate that the diffraction peak of the Nd-doped BiFeO₃ films is shifted towards right as the doping amounts are increased. The structure is transformed from the rhombohedral to pseudotetragonal phase. The crystal grain is changed from an elliptical to irregular polyhedron. Structure transition occurring in the Bi_0.85Nd_0.15FeO₃ films gives rise to the largest Pr of 64 μC/cm². The leakage conductance of the Nd doped thin films is reduced. The dielectric constant and dielectric loss of Bi_0.85Nd_0.15FeO₃ thin film at 10 kHz are 190 and 0.017 respectively.