Magnetic resonance imaging of rigid polymers at elevated temperatures with SPRITE

Magnetic resonance imaging has rarely been applied to rigid polymeric materials, due primarily to the strong dipolar coupling and short signal lifetimes inherent in these materials. SPRITE (single point ramped imaging withT ₁ enhancement) (B. J. Balcom, R. P. MacGregor, S. D. Beyea, D. P. Green, R. L. Armstrong, T. W. Bremner: J. Magn. Reson. A123, 131–134, 1996) is particularly well suited to imaging solid materials. With SPRITE, the only requirement is thatT ₂^* be long enough so that the signal can be phase-encoded. The minimum phase encoding time is limited by the maximum gradient strength available and by the instrument deadtime. At present this is usually tens of microseconds and will only improve with refinements in technology. We have used the SPRITE sequence in conjunction with raising the sample temperature to obtain images of rigid polymers that have largely frustrated conventional imaging methods. This approach provides a straightforward and reliable method for imaging a class of samples that, up until now, have been very difficult to image.     

混沌的模糊神经网络逆系统控制

提出用Sugeno型的模糊推理神经网络建立混沌系统的逆系统模型,并采用逆系统方法进行混沌的控制.这种方法的特点是可以不必建立混沌系统的解析模型,通过模糊神经网络学习混沌系统的运动规律,通过学习获得的规律对混沌进行有效的控制,并且该控制方法可以控制混沌系统以一定精度跟踪连续变化的给定信号.理论分析及针对虫口模型和Henon模型仿真研究证明了该方法的有效性 关键词： 混沌 模糊神经网络 逆系统控制     

Tablet disintegration monitored by magnetic resonance imaging

The disintegration of bromhexin tablets was monitored by magnetic resonance imaging. The fast imaging method FLASH with spoiling gradients was used to obtain images of the tablets in short time intervals. The rate of the disintegration depends on the preparation method, kind and percentage of the carrier (polyethylene glycol, lactose). Solid dispersion with slow evaporation of solvent yields materials with decreased dissolution rate. Increasing molecular mass of polyethylene glycol and its percentage content also hampers disintegration.     

Dynamic scanning force microscopy study of self-assembled DNA-protein nanostructures

Self-assembled oligomeric nanostructures consisting of bisbiotinylated DNA fragments connected by the protein streptavidin (STV) are studied by dynamic scanning force microscopy (SFM) operating in air. A comparison of the images taken in repulsive and attractive regimes is systematically made on DNA and STV structures. Stable and reproducible SFM images are obtained in the attractive regime by using a special feedback circuit, called Q-control. On the other hand, when SFM is operating in the repulsive regime, deformation of the structures that reduce the resolution and the image quality are clearly observable. The heights of both DNA and STV have been measured as a function of the tip/molecule interaction forces. This study offers the possibility to suggest a different mechanical behavior of DNA with respect to STV. Received: 24 July 2001 / Accepted: 3 December 2001 / Published online: 4 March 2002     

First-principles studies of kinetics in epitaxial growth of III–V semiconductors

We demonstrate how first-principles calculations using density-functional theory (DFT) can be applied to gain insight into the molecular processes that rule the physics of materials processing. Specifically, we study the molecular beam epitaxy (MBE) of arsenic compound semiconductors. For homoepitaxy of GaAs on GaAs (001), a growth model is presented that builds on results of DFT calculations for molecular processes on the β2-reconstructed GaAs (001) surface, including adsorption, desorption, surface diffusion, and nucleation. Kinetic Monte Carlo simulations on the basis of the calculated energetics enable us to model MBE growth of GaAs from beams of Ga and As₂ in atomistic detail. The simulations show that island nucleation is controlled by the reaction of As₂ molecules with Ga adatoms on the surface. The analysis reveals that the scaling laws of standard nucleation theory for the island density as a function of growth temperature are not applicable to GaAs epitaxy. We also discuss heteroepitaxy of InAs on GaAs (001), and report first-principles DFT calculations for In diffusion on the strained GaAs substrate. In particular, we address the effect of heteroepitaxial strain on the growth kinetics of coherently strained InAs islands. The strain field around an island is found to cause a slowing down of material transport from the substrate towards the island, and thus helps to achieve more homogeneous island sizes. Received: 2 May 2001 / Accepted: 23 July 2001 / Published online: 3 April 2002     

Gamma-ray spectroscopy of the neutron-rich Ni region through heavy-ion deep-inelastic collisions

Nuclei in the neutron-rich Ni region have been studied by γ-ray spectroscopy. Gamma-rays emitted from isomers, with T _1/2 > 1 ns, produced in heavy-ion deep-inelastic collisions were measured with an isomer-scope. The nuclear structure of the doubly magic ⁶⁸Ni and its neighbor ^69,71Cu is discussed on the basis of the shell model. Future experiments for more neutron-rich Ni nuclei are also viewed. Received: 1 May 2001 / Accepted: 4 December 2001     

Picosecond control of coherent magnetisation dynamics in permalloy thin films by picosecond magnetic field pulse shaping

We have measured the response of a 20×10 μm, 8 nm thin NiFe (80:20) permalloy film due to excitation by short in-plane magnetic field pulses. We will show that using a two-pulse-technique a complete control of the precessional motion of the magnetisation can be achieved on picosecond timescales. Furthermore, we will present numerical calculations which show that a complete suppression of magnetisation ringing after switching can only be realised by a cascade of short field pulses.     

Shell model interaction between proton holes and between proton holes and neutron particles around 208Pb

An effective residual interaction between particles and holes for shell model calculations around ²⁰⁸Pb, derived from the interaction between free nucleons, is compared with the measured properties of proton-hole neutron states in ²⁰⁸Tl and the interaction between proton holes is adjusted to newly measured level energies in ²⁰⁶Hg. These interaction elements are particularly relevant for neutron-rich nuclei. The adjustment of two mixing elements reproduces the known γ-decay data in ²⁰⁸Tl. Received: 2 April 2002 / Accepted: 2 May 2002     

Crystal structure and magnetic ordering of RNi Si compounds

The element distributions and the magnetic ordering behaviour of compounds RNi₁₀Si₂ (R = Tb, Dy, Ho, Er, Tm) have been studied by neutron powder diffraction down to temperatures of 1.6 K. The compounds crystallize in an ordered variant of the ThMn₁₂ structure type in the tetragonal space group P4/nmm. An ordered 1:1 distribution of Ni and Si on sites 4d and 4e, respectively, corresponds to a modulation vector [0, 0, 1] with respect to the space group I4/mmm of the ThMn₁₂ structure. TbNi₁₀Si₂ orders antiferromagnetically below T _N = 4.5 K with a magnetic propagation vector of [0, 0, 1/2]. The magnetic Tb moments, 8.97(2) /Tb atom at 1.6 K, are aligned along the c-axis. The Ni sites in TbNi₁₀Si₂ do not carry any ordered magnetic moments. The compounds with R = Dy, Ho, Er, and Tm are paramagnetic down to 1.6 K and 3.0 K, respectively. Received 10 July 2002 / Received in final form 12 September 2002 Published online 29 October 2002