Tellurium-related trap levels in silicon

Tellurium-related defects inn-type silicon have been analysed by deep level transient spectroscopy (DLTS). The tellurium doping of the samples was performed by ion implantation or during epitaxy. In all the samples, a level having a thermal activation energy around 0.37 eV is observed. This activation energy is found to be dependent on the electric field. Taking into account the Poole-Frenkel (FP) effect and a temperature dependence proportional toT ^?2 in the capture cross-section, a value ofE _A=0.41eV is obtained. A second Te-related level having an activation energy ofE _A=0.14eV without correction of the FP effect could only be measured in the implanted samples. The same concentration is observed for the two levels in the implanted samples thus indicating that both peaks in the DLTS spectra are caused by the identical Te-related defect.     

InclusiveK *+(890),K *+(1430) and\bar K^{ * - } (890) production inK + p interactions at 32 GeV/c

We present final results on inclusive production ofK ^*+(890),K ^*+(1430) andK ^*?(890) in \(\bar K^ + p\) interactions at 32 GeV/c, based on a statistics of ～27 events/μb. Total cross sections,p _T -andx-dependence of inclusive distributions are compared with experiments at other energies and with the Lund fragmentation model. Spin density matrix elements of theK ^*+(890) are also discussed. The results suggest that “recombination” of both initial state valence quarks \(\bar s\) andu of theK ⁺ intoK ^*+(890), responsible in the Lund model for ～45% of theK ^*+(890) cross section, is strongly suppressed.     

Inclusive photon and π0 production inK + p interactions at 70 GeV/c

Inclusive and semi-inclusive cross sections and distributions of γ's and π⁰'s inK ⁺ p interactions at 70 GeV/c are presented. The results are compared to other experiments and to the Lund model for low-p _T hadron collisions.     

The isotopes259106,260106, and261106

In irradiations of²⁰⁷Pb and²⁰⁸Pb, respectively, with⁵⁴Cr theα-decay of the isotopes²⁵⁹106,²⁶⁰106, and²⁶¹106 could be observed for the first time. For²⁶⁰106 a spontaneous fission branch of (50 _?20 ⁺³⁰ )% was observed. The isotopes were identified by genetic relationships of α-decay after separation in-flight with the velocity filter SHIP and implantation into a position-sensitive silicon surface-barrier detector. The measured partial fission halflife of the doubly even isotope²⁶⁰106 of (7.2 _?2.7 ^+4.8 )ms exceeds the predicted values by at least a factor of 40. This result could be explained by the high shell corrections of the ground state mass, derived from the measured α-decay energies. The experimental results show evidence for an island of purely shell stabilized nuclei in the region of deformed isotopes beyond the actinides.     

Static characteristics of Josephson interferometers

This investigation deals with the range in operating currents for which a Josephson interferometer, sometimes also referred to as Superconducting QUantum Interference Device (SQUID), may remain in the zero-voltage Josephson condition. An interferometer consists of one or more inductive loops each of which contains two Josephson junctions or other weak links. Two types of current are considered. Gate currentI _gpasses the junctions in parallel. Control currentI _cgenerates magnetic flux via inductive coupling in the loops. Zero-voltage operation is possible within certain areas of theI _g,I _cplane. These areas are manifestations of flux-quantum states and their boundary lines are referred to as static characteristics. In view of the nonlinearity of the constituting equations, not all their formal solutions are physically realizable. A stability analysis yields criteria which permit the identification of realizable operating conditions. The static characteristics comprise operating conditions where the limit of stability is reached. To obtain the static characteristics, linearized equations may be utilized if theLI _o product, a measure for the size of an interferometer, is large compared to the flux quantumΦ ₀, whereL is the inductance per loop, andI _o the maximum Josephson current per junction. As a general method of solving system of transcendental equations, continuation is discussed. The utilization of continuation for obtaining interferometer characteristics is explained. It is shown that some changes in the gate-current feed arrangement are equivalent to shearing the characteristics in theI _g,I _cplane. Analytical results are given on extrema, inflexion points, and singularities in the shape of cusps which conceptually relate to the existence and connectivity of flux-quantum states. Experimental static characteristics are presented on two-and four-junction interferometers. They are in agreement with characteristics computed on the basis of simple lumped circuit models. Relevant circuit parameters are obtained from the experimental characteristics.     

Microscopical studies at cadmium impurities in compound semiconductors

Molecule-like defect complexes have been studied at Cd acceptors in the III–V semiconductors GaAs, GaP, InP, InAs, and InSb by PAC spectroscopy. After hydrogen plasma treatment, the formation of Cd-H complexes was observed in all these compounds. Additionally, the formation and stability of Cd-S and Cd-Se pairs in GaAs have been analyzed.     

Measurement of γp→K + Λ and γp→K + Σ 0 at photon energies up to 1.47 GeV

The reactions pK ⁺ and pK ^{+ 0} have been measured with the multiparticle detector system SAPHIR at ELSA in Bonn. Besides the differential cross sections the polarization and, for the first time, the ⁰ polarization have been determined in a photon induced reaction. All data are presented as functions of the photon energy (from threshold up to 1.47 GeV) and of the kaon production angle (0°–180°). The polarization of both and ⁰ is substantial at all energies and varies strongly with the production angle.This work is supported by the Bundesminister für Forschung und Technologie (BMFT), FK 06 BN 621 I     

Dichroism of (CH3NH3)2CdCl4 in the farinfrared

The dielectric constant of (CH₃NH₃)₂ CdCl₄ has been measured as a function of temperature in the submillimeter range. Freshly grown samples with a wide domain structure at room temperature show a pronounced dichroism in this spectral range which is caused by the orientation of the molecules in the room temperature orthorhombic phase and their response to the electromagnetic wave.     

A large-scale application of the partial coverage uncapacitated facility location problem

The traditional, uncapacitated facility location problem (UFLP) seeks to determine a set of warehouses to open such that all retail stores are serviced by a warehouse and the sum of the fixed costs of opening and operating the warehouses and the variable costs of supplying the retail stores from the opened warehouses is minimized. In this paper, we discuss the partial coverage uncapacitated facility location problem (PCUFLP) as a generalization of the uncapacitated facility location problem in which not all the retail stores must be satisfied by a warehouse. Erlenkotter's dual-ascent algorithm, DUALOC, will be used to solve optimally large (1600 stores and 13?000 candidate warehouses) real-world implemented PCUFLP applications in less than two minutes on a 500?MHz PC. Furthermore, a simple analysis of the problem input data will indicate why and when efficient solutions to large PCUFLPs can be expected.