Interference of a four-hole aperture for on-chip quantitative two-dimensional differential phase imaging

We present a novel on-chip method for quantitative two-dimensional differential phase imaging. This technique uses four circular holes (600 nm diameter, 1.2 mum spacing) arranged in a 'plus' pattern that are fabricated in a layer of metal above a complementary metal-oxide semiconductor (CMOS) imaging sensor. The interference pattern of the aperture shifts position with respect to the differential phase of the incident light. By imaging the interference pattern with the CMOS sensor, this method measures amplitude and differential phase (1 degrees /microm sensitivity for signal-to-noise ratio >/=16 dB) of the incident light field simultaneously. An application to optical beam profiling is presented; we show the amplitude and differential phase profiles of a Gaussian laser beam and an optical vortex.     

Stoneley waves in three-layered cylindrical solid media

This paper considers the propagation of Stoneley modes along the interfaces of three-layered concentric cylindrical solid media in order to assist in the design of ultrasonic transmission rods. The phase velocity dispersion curves and amplitude distributions are numerically analyzed. The modes are analogous to non-dispersive Stoneley waves and are confined to the vicinities of the two interfaces at high frequency. A key finding is that the peak amplitude location for each mode transfers between the two interfaces as a function of frequency. A simplified model is introduced, giving the peak amplitude locations of each mode in different frequency ranges efficiently.     

Above-threshold detachment of negative ions by circularly polarized few-cycle laser fields

In accordance with nonperturbative quantum scattering theory,we investigate photoelectron angular distributions(PADs) from above-threshold detachment(ATD) of negative ions irradiated by circularly polarized few-cycle laser fields.Electrons ejected on the polarization plane demonstrate distinct anisotropies in angular distributions which distinctly vary with the carrier-envelope(CE) phase.The anisotropy is caused by interference between transition channels;it also depends strongly on laser frequency,pulse duration,and kinetic energy of photoelectrons.Optimal emission of photoelectrons,which varies with CE phase,makes it possible to control photoelectron motion.     

Impact of organic contamination in vacuum on laser-induced damage threshold of TiO2/SiO2 dielectric mirrors

The influence of organic contamination in vacuum on the laser-induced damage threshold (LIDT) of coatings is studied. TiO2/SiO2 dielectric mirrors with high reflection at 1064 nm are deposited by the electronbeam evaporation method and their LIDTs are measured in vacuum and atmosphere, respectively.It is found that the contamination in vacuum is easily attracted to optical surfaces because of the low pressure and becomes the source of damage, O2 molecules in vacuum with contamination can accelerate the laser-induced damage by observing LIDT and damage morphologies. LIDTs of mirrors have a little change in vacuum compared with in atmosphere when the organic contamination is wiped off. The results indicate that organic contamination is a significant reason to decrease the LIDT in vacuum.     

基于微机电系统技术的高性能集成型微富集器（英文）

由于大部分环境样品的浓度非常低,为了实现其直接检测,提出将一种集成化的微型富集器应用到色谱系统中。富集器可实现色谱系统的进样与样品富集,能将色谱仪的检测限提高1~2个数量级。设计的富集器采用了高容量4平行通道结构,沟道内填充了高吸附率的Tenax-TA吸附材料,来实现对环境样品中挥发性有机化合物组分的富集。此外,为了密闭热解吸过程中所释放的组分,在微型富集器后集成了微型阀。试验结果表明,研制的微型富集器取得了15倍以上的富集因子。而且,通过微阀的控制,色谱峰的拖尾和峰展宽得到了有效的控制。因此,该微型富集器可广泛应用到环境样品的快速检测中,提高各检测器对复杂环境的适应能力。     

同步辐射的相干模式

在分析了光源相干相体积的基础上，重点研讨了第三代同步辐射中波荡器（ｕｎｄｕｌａｔｏｒ）辐射的相干模式，能谱亮度，相干光子通量等，这对提高光束线相干能量的传输效率和软Ｘ光相干学束线的设计具有重要意义。     

Fano effect of a parallel-coupled triple Rashba quantum dot system

Using the nonequilibrium Keldysh Green's function technique, the Fano effect of a parallel-coupled triple Rashba quantum dot system is investigated. The conductance as a function of electron energy is numerically calculated. Compared with the case of a parallel-coupled double quantum dot system, two additional Fano resonance peaks occur in the conductance spectrum. By adjusting the structural parameters, the two Fano resonance peaks may change into the resonance peaks. In addition, the influence of Rashba spin-orbit interaction on the conductance is studied.     

880 nm laser-diode end-pumped Nd:YVO<Subscript>4</Subscript> slab laser at 1342 nm

43.6 W near-diffraction-limited continuous-wave laser beam at 1342 nm in 880 nm laser-diode partially end-pumped Nd:YVO₄ slab laser is presented. The slope efficiency and optical-to-optical efficiency with respect to absorbed pumping power were 45.4% and 35.9%, respectively. At output power of 34.5 W, the M ² factors in unstable and stable directions were 1.3 and 1.2, respectively.     

Investigation on push-pull polymer Mach-Zehnder interferometer electro-optic switches using improved 3-D mode propagation analysis method

By introducing normalized mode excitation coefficient and total mode excitation coefficient, we improve the 3-D mode propagation analysis (MPA) method for convenient design and analysis of multimode interference (MMI) coupler. With the improved 3-D MPA method and point-matching method, we present a novel formulation technique to analyze the low- and high-frequency characteristics for the impedance-matched polymer Mach-Zehnder interferometer electro-optic (EO) switch based on MMI couplers. As an application, under 1550 nm, optimization and simulation performed for the designed device reveal low driving voltage of 1.375 V with short EO region length of 5 mm. The insertion loss and extinction ratio are less than 3.75 dB and more than 42 dB, respectively. The microwave characteristic impedance is about 49.6 Ω, and due to the less mismatch between lightwave velocity and microwave velocity, the estimated cutoff switching frequency is up to 263 GHz with the 10–90% rise time and fall time about 1.90 ps under the operation of step-style square-wave switching signal. This theoretical cutoff switching frequency is almost 1.53 times of that of our previous reported shielded EO switch with similar design technique.     

曲率半径误差对平场全息凹面光栅分辨率的影响及其补偿方法

在平场凹面全息光栅的没计制作中,不可避免的存在曲率半径误差,严重影响光栅光谱仪的分辨率.为了从理论上分析并指导光谱仪器的设计和装调,运用几何光线追迹方法计算并分析了不同曲率半径误差下光谱像宽度的变化规律,发现在一个较大的误差范围内子午焦线的位置随着曲率半径的变化前后平移,同时其弯曲程度几乎没有改变.数值计算发现通过调整像面位置或人臂长度均能够补偿曲率半径的误差.数值模拟结果显示,修正使用结构后的光栅能够达到与设计结果相近的成像质量.