110kV冷绝缘高温超导电缆在故障电流下的温度计算与分析

研究了110kV冷绝缘高温超导电缆失超时,故障电流的分流情况,并以此为依据,建立了电缆在故障电流下失超时,温升与时间关系的计算模型;通过MATLAB对计算模型进行了求解,并对求解结果进行了分析;计算出了电缆在不同故障电流下,温度上升到不同值所需要的时间,进一步明确了故障电流的大小对电缆温升的影响。     

人体中的伯努利方程

本文从设计实验入手,形象诠释伯努利原理,并从物理学角度出发,根据人体体液流动的实际情况,运用伯努利原理及经典的伯努利方程,从人体血液循环、房水循环的压力形成和改变方面,把物理学的基本理论运用于分析人体体液压力的变化。     

二氧化钒薄膜的低温制备及其性能研究

针对VO₂薄膜在微测辐射热计上的应用，采用射频反应溅射法，在室温下制备氧化钒薄膜；研究了氧分压对薄膜沉积速率、电学性质及成分的影响.通过调节氧分压，先获得成分接近VO₂的非晶化薄膜，再在400℃空气中氧化退火，便可制得高电阻温度系数，低电阻率的VO₂薄膜，电阻温度系数约为-4%/℃，薄膜方块电阻为R_□为100—300kΩ；薄膜在室温下沉积，400℃下退火的制备方法与微机电加工(micro electromechanic 关键词： 二氧化钒 电阻温度系数 氧分压 射频反应溅射法     

磁场对四端量子波导中电子输运性质的影响

采用模匹配方法，研究了非均匀磁场下开放的四端量子波导中的电子输运性质. 结果表明，从一端入射的电子可以透射到两个与之垂直的输出端和一个与之平行的输出端. 在没有外加磁场的情况下，两个垂直输出端的输运概率是相同的，但垂直端与水平端的输运概率不同；在外加磁场下，由于磁边缘态效应，两个垂直输出端的输运概率也有着相当大的差别. 通过施加不同的磁场，我们能获得丰富的电子输运结构，如台阶，宽谷，尖峰等；通过调节磁场的大小和比例以及结构参数可控制该量子结构在各输出端的输运概率. 关键词： 电子输运 介观体系 磁效应     

C-V法提取SiC隐埋沟道MOSFET沟道载流子浓度

本文对用C-V法提取SiC隐埋沟道MOSFET沟道载流子浓度的方法进行了理论和实验分析. pn结的存在所造成的埋沟MOS结构C-V曲线的畸变为沟道载流子浓度的提取带来一些问题. SiC/SiO₂界面上界面态的存在也会使提取出的数值与实际数值产生偏差. 本文首先从理论上分别分析了沟道深度和界面态对沟道载流子浓度提取结果的影响，然后对两种沟道深度的埋沟MOS结构C-V曲线进行了测试，提取出了沟道掺杂浓度. 在测试中，采用不同的扫描速率，分析了界面态对提取结果的影响. 理论分析结果和实验测 关键词： C-V法 SiC 隐埋沟道MOSFET 沟道载流子浓度     

Can Millimeter Waves Generate Electroporation?

Analysis of the field distributions in a single biological cell under electromagnetic wave is given. With Debye approximation, the dielectric relaxation of each part of the cell, including the extracellular and cellular media, the cell membrane and the nuclear membrane, was taken into account. Making use of some typical parameters for a cell, the voltage across nuclear and cytoplasma membranes under electromagnetic waves are calculated up to millimeter wave frequency range. The calculated result indicates that it is unlikely to generate electroporation by present available millimeter wave sources.     

Production and Application of the Langmuir Aggregates of Eosine with Cetyl Trimethyl Ammonium Bromide

The procedure of microphase adsorption–spectral correction is applied to the interaction of eosine Y (EO) to the micelles of cetyl trimethyl ammonium bromide (CTAB). The Langmuir aggregation of EO on CTAB occurs owing to microelectrostatic attraction. The results have shown that at pH 3.8, monomeric and micellar aggregates have the structure EO₅·CTAB₂ and (EO₅·CTAB₂)₃₉. The adsorption constant of an aggregate is 7.01·10⁵, its molar absorption coefficient is = 8.8·10⁴ liters·mole^–1·cm^–1 at 550 nm. Application of the aggregation of EO on CTAB gives satisfactory results for quantitative determination of cation surfaceactive agents (surfactants).     

Improved detection of time windows of brain responses in fMRI using modified temporal clustering analysis

Temporal clustering analysis (TCA) has been proposed recently as a method to detect time windows of brain responses in functional MRI (fMRI) studies when the timing and location of the activation are completely unknown. Modifications to the TCA technique are introduced in this report to further improve the sensitivity in detecting brain activation. The modified TCA is based on the integrated signal intensity of a temporal cluster at each time point, while the original TCA is based only on the size of a temporal cluster at each time point. A temporal cluster at each time point is defined, in both TCA methods, as a group of pixels reaching their maximum (or minimum) values at the same time. Both computer simulation and in vivo fMRI experiments have been performed. Compared with the original TCA, the modified TCA shows a significant improvement in the sensitivity to detect activation peaks for determining time windows of brain responses.     

短脉冲载荷下金属材料的层裂破坏

 本文用点炮加载聚酯薄膜飞片撞击金属靶材料，飞片速度0.714~2.24 km/s，脉冲宽度40~80 ns，击靶压力为2.280~11.952 GPa。在回收的铝、铜和钢靶样品上观察到层裂现象。通过金相分析发现它们的破坏方式与在一般较长脉冲加载下的破坏方式相似，铝和铜以延性方式破坏；钢则以脆性方式破坏。一维和二维数值模拟结果表明通常的几种层裂判据在这个应力、应变和应变率范围内也基本上适用。     

亚细胞器诱导的2,4,6-三硝基甲苯阴离子自由基的ESR研究

本文在无氧条件下利用ESR分别观察了肝脏和晶状体的微粒体及线粒体酶在NADPH存在下还原三硝基甲苯(TNT)的过程,检测到参数为g=2.0048±0.0005,A_对位~N=1.215mT,A~N=0.800±0.010mT,A~H=0.122±0.0206mT的自由基信号,并通过电子计算机对ESR谱的模拟证明该自由基信号为TNT硝基阴离子自由基,根据其超精细分裂常数认为,其不配对电子的电子云密度主要分布在对位硝基上。