von Neumann代数中套子代数上的Lie同构

本文给出因子von Neumann代数中的幂等算子在广义Lie积下的一个刻画; 得到因子von Neumann代数中套子代数的幂等算子在Lie积下的一个特征．作为应用, 研究了因子von Neumann代数中套子代数上的Lie同构,并证明因子von Neumann 代数中套子代数之间的Lie同构,要么是同构与广义迹之和,要么是负反同构与广义迹之和．     

Photorefractive shearing interferometer

A novel method of obtaining shearing interferogram by slightly moving the crystal in a photorefractive interferometer is proposed. This method can measure the phase of an object itself instead of its diffraction field, and it is easy to realize continuously changeable shearing distance in any lateral direction and introduce carrier fringes at the same time. Both the theoretical analysis and experimental verification are given.     

用超磁致伸缩调谐光纤光栅的光分/插复用器

提出并研究了一种新型多信道切换的全光分/插复用器,它主要由光纤Bragg光栅(FBG)和一对光环行器组成.采用了一种高效的超磁致伸缩材料(GMM)使FBG产生有效的Bragg波长偏移.用控制电流来调控FBG的应变和Bragg波长偏移.用4只相同的FBG与波长叠加技术相结合,可建立能提供15种不同下路信道方式的OADM.     

On the Exceptional Zeros of Rankin–Selberg L-Functions

The main objects of study in this article are two classes of Rankin–Selberg L-functions, namely L(s,f×g) and L(s, sym²(g)× sym²(g)), where f,g are newforms, holomorphic or of Maass type, on the upper half plane, and sym²(g) denotes the symmetric square lift of g to GL(3). We prove that in general, i.e., when these L-functions are not divisible by L-functions of quadratic characters (such divisibility happening rarely), they do not admit any LandauSiegel zeros. Such zeros, which are real and close to s=1, are highly mysterious and are not expected to occur. There are corollaries of our result, one of them being a strong lower bound for special value at s=1, which is of interest both geometrically and analytically. One also gets this way a good bound onthe norm of sym²(g).     

On the Strong Law of Large Numbers and the Law of the Logarithm for Weighted Sums of Independent Random Variables with Multidimensional Indices

Let (X, X ; ^d} be a field of independent identically distributed real random variables, 0 < p < 2, and {a _, ; ( , ) ^d × ^d, ≤ } a triangular array of real numbers, where ^d is the d-dimensional lattice. Under the minimal condition that sup _, |a _, | < ∞, we show that | |^{− 1/p} ∑ _≤ a _, X → 0 a.s. as | | → ∞ if and only if E(|X|^p(L|X|)^{d − 1}) < ∞ provided d ≥ 2. In the above, if 1 ≤ p < 2, the random variables are needed to be centered at the mean. By establishing a certain law of the logarithm, we show that the Law of the Iterated Logarithm fails for the weighted sums ∑ _≤ a _, X under the conditions that EX = 0, EX² < ∞, and E(X²(L|X|)^{d − 1}/L₂|X|) < ∞ for almost all bounded families {a _, ; ( , ) ^d × ^d, ≤ of numbers.     

Stopband Phenomena in the Passband of Left-Handed Metamaterials

Stopband phenomena are reported in the passband of left-handed metamaterials. The samples with linear defect are designed by removing one layer of split ring resonators （SRRs）. It is shown that the left-handed transmission peaks have a distinct transform with the relative deviation of the SRRs centre from the wire centre 8, from a single left-handed peak, double left-handed peaks with different magnitude to no transmission peak, i.e. left-handed properties of metamaterials disappear. Numerical simulation shows that the change of 8 makes the effective permeability shift at a frequency range, where stopband occurs. It is thought that the stopband in left-handed passband is due to the symmetry breaking between SRRs and wires in the metamaterials.     

Enhanced hardness in B-doped ZnO thin films on fused quartz substrates by pulsed-laser deposition

B-doped ZnO thin films have been fabricated on fused quartz substrates using boron-ZnO mosaic target by pulsed-laser deposition technique, and the mechanical properties have been studied by nanoindentation continuous stiffness measurement technique and transmission electron microscope (TEM). Nanoindentation measurement revealed that the hardness of B-doped ZnO films, 9.32 ± 0.90 to 12.10 ± 1.00 GPa, is much greater than that of undoped ZnO films and very close to that of traditional semiconductor Si. The mean transmittance (%) is larger than 81% in the visible range (380-780 nm) for all the films, and the Hall effect measurement showed that the carrier density is around 2 × 10²⁰ cm⁻³ and the resistivity lower than 3 × 10⁻³ Ω cm. TEM characteristics show undoped thin films have more amorphous area between grains while the B-doped ZnO films have thin grain boundaries. We suggest that the grain boundaries act as the strain compensation sites and the decrease in thickness of grain boundaries enhances the hardness of the B-doped ZnO films.     

Direct measurement of the magnetocaloric effect in La0.67Ca0.33MnO3

Polycrystalline perovskite La_0.67Ca_0.33MnO₃ was synthesized by a sol–gel method. Its adiabatic temperature change ΔT_ad induced by a magnetic field change was measured directly. At 268 K, near its Curie temperature T_C, ΔT_ad of La_0.67Ca_0.33MnO₃ induced by a magnetic field change of 2.02 T reaches 2.4 K. The latent heat Q and magnetic entropy change −ΔS_M induced by a magnetic field change were calculated from the temperature dependence of ΔT_ad and zero-field heat capacity C_p. The maximum values of Q and −ΔS_M in La_0.67Ca_0.33MnO₃ induced by a magnetic field change of 2.02 T are 1.85 J g⁻¹ and 6.9 J kg⁻¹ K⁻¹, respectively. The former is larger than the phase transition latent heat of heating or cooling, which is about 1.70 J g⁻¹.     

Reduction of Dislocations in GaN Epilayer Grown on Si （111） Substrates using a GaN Intermedial Layer

GaN intermedial layers grown under different pressures are inserted between GaN epilayers and AIN/Si（111） substrates. In situ optical reflectivity measurements show that a transition from the three-dimensional （3D） mode to the 2I） one occurs during the GaN epilayer growth when a higher growth pressure is used during the preceding GaN intermedial layer growth, and an improvement of the crystalline quality of GaN epilayer will be made. Combining the in situ reflectivity and transmission electron microscopy （TEM） measurements, it is suggested that the lateral growth at the transition of growth mode is favourable for bending of dislocation lines, thus reducing the density of threading dislocations in the epilayer.     

具有突变结构开放腔的矩阵分析

利用模式展开与场匹配原理，建立了突变波导的散射矩阵(S参数矩阵)，在此基础上分析研究了具有突变结构的波导开放式谐振腔，并由矩阵级联建立了开放腔总的S参数矩阵.通过Matlab编制计算程序对具有多级突变结构的开放式输出腔进行了数值计算和分析，并通过与实验数据和软件模拟的结果比较对该方法得到的数据结果进行了验证. 关键词： 回旋管 开放式谐振腔 突变结构 S参数矩阵