QUATERNION GENERALIZED SINGULAR VALUE DECOMPOSITION AND ITS APPLICATIONS

This paper derives a theorem of generalized singular value decomposition of quaternion matrices （QGSVD）,studies the solution of general quaternion matrix equation AXB -CYD= E,and obtains quaternionic Roth＇s theorem. This paper also suggests sufficient and necessary conditions for the existence and uniqueness of solutions and explicit forms of the solutions of the equation.     

Separate Polarization Modes Synchronization and Synchronization Switches between Vertical-Cavity Surface-Emitting Lasers

For vertical-cavity surface-emitting lasers (VCSELs) with polarization-rotated feedback, there exist several synchronization types such as synchronizations between total powers and synchronizations between separate polarization modes. Based on the two-mode rate equations, we study and compare numerically the performances of different synchronization types. Our results show that three synchronization types exhibit good performances when their synchronization conditions are satisfied. They are the complete synchronization between total powers, complete synchronization between x-polarized modes, and generalized synchronization between x-polarized and y-polarized modes. The former two types are sensitive to the injection rate and spontaneous emission, while the third type is contrary. Synchronization type with the best performance may switch from one to another, with changing of injection rate and spontaneous emission factor.     

增强型延迟反馈法控制低维混沌系统的解析研究

基于时间延迟反馈控制混沌系统的方法,提出一种增强型控制方案,并利用分析延迟系统产生Hopf分支条件的方法,给出这种方案控制低维连续自治混沌系统时,在达到控制目标的条件下,控制参数的一般解析关系.将这一方案和分析方法应用到两个混沌模型中,结果表明:采用修正的方案可以明显地改善控制混沌的效果和质量;解析分析的结果与实际数值计算的结果一致. 关键词： 延迟反馈 混沌控制 Hopf分支     

两亲性嵌段聚合物的同步辐射小角x射线散射研究

应用同步辐射小角x射线散射(SAXS)方法研究了不同聚合条件下苯乙烯对乙烯基苯甲酸两亲性嵌段聚合物的聚集行为,结果发现该聚合物在选择性溶液中自组装形成胶束.胶束的形态和结构取决于嵌段聚合物的组成、浓度以及溶剂的性质等因素 关键词： 小角x射线散射 两亲性嵌段聚合物 分形维数 粒径     

Investigation of laminar plasma remelting/cladding processing

Investigation of remelting and cladding processing with laminar plasma jets on several metals has been conducted looking for possible development of a new surface modification technique. The remelting tests illustrated that the new method could evidently improve the material microstructure and properties of cast iron. The cladding was done with Al₂O₃ ceramic powder on stainless steel. The energy dispersive spectra (EDS) analysis was used to determine the distribution of the major cladding element in the plasma-processed layers, for which the microstructure observations and hardness measurements were also performed.     

CP violation and extra dimensions

It is shown that new sources of CP violation can be generated in models with more than one extra dimension. In the supersymmetric models on the space-time , where the radius moduli have auxiliary vacuum expectation values and the supersymmetry breaking is mediated by the Kaluza–Klein states of the gauge supermultiplets, we analyze the gaugino masses and trilinear couplings for two scenarios and obtain the result that there exist relative CP violating phases among the gaugino masses and trilinear couplings. Received: 10 October 2001 / Published online: 20 December 2001     

关于消失平均振动的一个注记

本文得到了极大算子的几个不等式,并从这些结果推广了函数f∈L_(loc)~1(R,dx)属于VMO(R,dx)的一个必要条件。     

进口畸变条件下改善压气机性能的数值研究

依据"非定常两代流型"理论,验证了二维叶栅在均匀进气条件下,施加激励对其性能所起的改善作用,尔后重点研究了进口具有总压的周向畸变时,施加激励对其气动性能的影响。计算结果表明,在有无进口畸变时,施加一定的激励都会改善流场结构,气动参数有积极变化,压升和效率增加,特别是在流量比较小时,变化尤为明显.对于进口畸变和施加激励影响压气机性能的内在原因,从流场结构的变化方面进行了初步分析。     

吸积盘的X射线辐射对周围星际物质的离化研究

利用辐射流体力学程序对三倍频纳秒激光与靶物质相互作用进行了模拟研究，得到了可以产生黑体辐射谱分布的激光等离子体X射线辐射靶的最佳厚度；数值模拟研究了黑体谱分布的X射线辐射场对等离子体系统平均离化度分布的影响，它有助于深入理解天体物理中吸积盘对它周围星际物质的离化影响. 关键词： 辐射流体力学 激光等离子体 X射线辐射 吸积盘 离化     

Formation of Interfacial Layers in LaAlO3/Silicon during Film Deposition

We have studied the interracial reactions between amorphous LaAlO3 thin films and Si substrates, using high- resolution transmission electron microscopy and x-ray photoelectron spectroscopy. It has been shown that the interracial layer between LaAlO3 film and Si substrate chemical states show that the ratio of La 4d3/2 to Al 2p is SiLaxAlyOz. The depth distributions of La, Si and Al of the interfacial layer remains unchanged with the depth compared to that of the LaAlO3 film. Moreover, the Si content, in the interracial layer gradually decreases with increasing thickness of the interracial layer. These results strongly suggest that the Al element is not deficient in the interracial layer, as previously believed, and the formation of a SiLaxAlyOz interracial layer is mainly due to the diffusion of Si from the substrate during the LaAlO3 film deposition. With the understanding of the interracial layer formation, ones can control the interface characteristics to ensure the desired performances of devices using high-k oxides as gate dielectrics.