High dose iron implantation into silicon and metals

High dose implantations of Fe into metals and semiconductors have been performed with beam energies up to 1 MeV at the UNILAC-injector at GSI. Unusual high concentrations of 70 atomic % for Si and 20 atomic % for Cu have been obtained, with doses of 10¹⁸ Fe/cm² in the case of Si and several 10¹⁷ Fe/cm² in the case of Cu. For Si the thickness of the layers were determined by Rutherford backscattering to be 4500 Å. These results are consistent with calculations, which show that these high concentrations are due to the reduction of the sputter yield at the relative high particle energies. Samples have been characterized using several complementary methods (Mössbauer Spectroscopy (MS), Rutherford Backscattering Spectroscopy (RBS), Auger electron Spectroscopy (AES). Scanning Electron Microscopy (SEM), X-ray diffraction (XRD)).     

The shape invariant of triangles and trigonometry in two-point homogeneous spaces

We define a fourth basic invariant, which, besides the lengths of the three sides of a triangle, determines a triangle in the complex and quaternion projective spaces P ⁿ and P ⁿ (n2) uniquely up to isometry. We give inequalities describing the exact range of the four basic invariants. We express the angular invariants of a triangle with our basic invariants, giving a new completely elementary proof of the laws of trigonometry. As a corollary we derive a large number of congruence theorems. Finally we get, in exactly the same way, the corresponding results for triangles in the complex and quaternion hyperbolic spaces H ⁿ and H ⁿ (n2).     

Link maps and the geometry of their invariants

The geometry of two types of link homotopy invariants of a link map f:S^pS^qS^m is discussed. The first one is the -invariant which greatly generalizes the classical notion of linking number. The second one, the -invariant, is closely related to the linking behaviour of f|s^p with only the double point set of f|S^q, and therefore measures (to some extend) the obstruction to embedding S^q. These invariants are related by a Hopf invariant homomorphism. In many cases link maps are classified up to link homotopy here, and a setting is provided e.g. for future injectivity results for . Also the image of is studied, yielding an interesting double filtration of stable homotopy groups of spheres.     

Relative index theorems and supersymmetric scattering theory

We discuss supersymmetric scattering theory and employ Krein's theory of spectral shift functions to investigate supersymmetric scattering systems. This is the basis for the derivation of relative index theorems on some classes of open manifolds. As an example we discuss the de Rham complex for obstacles in ^N and asymptotically flat manifolds. It is shown that the absolute or relative Euler characteristic of an obstacle in ^N may be obtained from scattering data for the Laplace operator on forms with absolute or relative boundary conditions respectively. In the case of asymptotically flat manifolds we obtain the Chern-Gauss-Bonnet theorem for theL ²-Euler characteristic.On leave of absence from Institute of Physics, Leningrad State University, Leningrad     

On the generation and annealing of dangling bond defects in hydrogenated amorphous silicon

We show that, through the diffusive re-arrangement of Si-H bonds, the a-SiH lattice is able to establish thermal equilibrium between the densities of band tail trapped charge carriers and dangling bond defects. When this equilibrium is disturbed by changes in temperature, carrier injection or illumination, dangling bond defects have to be generated or annealed out via H-diffusion processes. Based on the concept of charge-induced bond breaking, we develop a mathematical formalism for the diffusive re-arrangement of Si-H bonds and show that our formalism can account for a variety of observations that have been made in the context of defect-generation and annealing experiments.