Wavelength tunable laser beam shaping

Laser beam shaping by phase-only transformations, often referred to as field mapping, has for a long time been considered wavelength dependent. In this Letter we outline a simple mathematical argument that shows how the problem may be formulated in a wavelength tunable manner, requiring only a minor adjustment in the observation plane. We verify the theoretical prediction by experiment using the example of a Gaussian-to-flattop-beam transformation, and we show that the shaping is valid across a wide range of wavelengths for a single diffractive optical element.     

High power resonant tracking amplifier using admittance locking.

A high power resonance tracking ultrasonic amplifier is described. The amplifier is a class D type inverter, configured as a half-bridge in which the output MOSFETs are driven into saturation when on. The resonance tracking system makes use of a new method of frequency locking; admittance locking is used to track the optimum power conversion frequency for the transducer. This new arrangement offers some advantages over phase locking and motional feedback methods. The system is capable of delivering up to 3 kW at up to 25 kHz in resonance tracking operation.     

用于蛋白同时复性及纯化的制备型装置中流动相用量的优化研究

 在生物大分子的高效液相色谱分离中 ,由计量置换保留模型可得出生物大分子在色谱柱上的保留行为取决于流动相中置换剂的浓度的结论。据此提出了用于蛋白同时复性及纯化的制备型装置 (USRPP)中最小流动相用量的估算公式 ,并进一步得出在保持最小流动相用量不变的条件下 ,改变流动相流速和线性梯度时间几乎不影响制备型USRPP分离蛋白的分离度和复性效率的结论。该结论与实验结果一致。     

反相液相色谱中溶质保留参数间的定量关系研究

 比较了Snyder经验公式中的K0w 与S和溶质计量置换保留模型 (SDM R)中溶质保留参数Z(1mol溶剂化溶质被溶剂化固定相吸附时 ,在其接触表面处释放出溶剂或置换剂的总摩尔数 )与lgI(与 1mol溶质对固定相的亲和势有关的常数 )之间的定量关系。SDM R中的两个参数间不仅对同系物溶质可以有很好的线性关系 ,而且对非同系物溶质也有很好的线性关系。其线性关系的好坏主要取决于这两个参数数值范围的大小 ,与文献中报告的线性关系取决于是否单因素影响溶质的保留和完全由统计学规律决定的结论不同。     

Sur la forme de Seifert entière des germes de courbe plane à deux branches

Two plane curve germs with two branches, which are isomeric, are shown to have isomorphic integral Seifert forms. The weight filtration on the integral homology of the Milnor fiber is the key ingredient of the proof. To cite this article: P. du Bois, C. R. Acad. Sci. Paris, Ser. I 336 (2003).     

Bias-dependent spin relaxation in a -InAs/AlSb 2DES

Manipulation of electron spin is a critical component of many proposed semiconductor spintronic devices. One promising approach utilizes the Rashba effect by which an applied electric field can be used to reduce the spin lifetime or rotate spin orientation through spin–orbit interaction. The large spin–orbit interaction needed for this technique to be effective typically leads to fast spin relaxation through precessional decay, which may severely limit device architectures and functionalities. An exception arises in [1 1 0]-oriented heterostructures where the crystal magnetic field associated with bulk inversion asymmetry lies along the growth direction and in which case spins oriented along the growth direction do not precess. These considerations have led to a recent proposal of a spin-FET that incorporates a [1 1 0]-oriented, gate-controlled InAs quantum well channel. We report measurements of the electron spin lifetime as a function of applied electric field in a [1 1 0]-InAs 2DES. Measurements made using an ultrafast, mid-IR pump-probe technique indicate that the spin lifetime can be reduced from its maximum to minimum value over a range of less than 0.2 V per quantum well at room temperature.