On the origin of the 2.2-2.3 eV photoluminescence from chemically etched germanium

The photoluminescence (PL) at ∼2.2-2.3 eV from Ge-based nanocrystalline materials is described in the literature as nanocrystal size-independent. We have observed visible luminescence from two different types of stain-etched Ge samples, one prepared after Sendova-Vassileva et al. (Thin Solid Films 255 (1995) 282) in a solution of H₂O₂:HF at 50:1 volume ratio, and the other in a solution of HF:H₃PO₄:H₂O₂ at 34:17:1 volume ratio. Energy dispersive X-ray analysis (EDX), Raman and FTIR spectroscopy, and the near edge X-ray absorption structure (XANES), indicate that the chemically etched Ge layers of the former type of samples are composed of non-stoichometric Ge oxides, i.e. GeO_x (0<x<2), and free from any Ge nanoconstructions. It is also suggested from XANES that the latter type of chemically etched Ge samples comprise 8-9 nm nanocrystals of Ge, surface-covered with mainly oxygen. Photoluminescence occurred at ∼2.3 eV for all samples. The PL behavior of the latter type of chemically etched Ge on annealing in different chemical environments (air or H) allowed us to conclude that the PL from these materials, as well as that from those Ge-based nanocrystalline materials reported in the literature, is from GeO_xs.     

Intramolecular interactions in ethyl bis-(2,4-dinitrophenyl)acetate

The crystal structure of ethyl bis(2,4-dinitrophenyl)acetate, determined by room temperature X-ray diffraction, shows that this crowded molecule contains two short intramolecular interactions between nitro oxygen atoms and electron deficient carbon atoms. One mimics an early stage of the nucleophilic addition to a carbonyl group (O...C, 2.730 Å), and the other mimics an early stage of a Michael reaction (O...C, 2.854 Å). Crystal data: C₁₆H₁₂N₄O₁₀, M _r = 420.29, a = 10.079(1), b = 11.139(1), c = 16.162(1) Å, = 91.319(7)°, monoclinic, P2₁/c, Z = 4.     

Novel two-band ratiometric fluorescence probes with different location and orientation in phospholipid membranes

3-hydroxyflavone (3-HF) derivatives are very attractive fluorescence sensors due to their ability to respond to small changes in their microenvironment via a dramatic alteration of the relative intensities of their two well-separated emission bands. We developed fluorescence probes with locations at different depths and orientations of 3-HF moiety in the phospholipid bilayer, which determine their fluorescence behavior. While the spectral shifts of the probes correlate with their binding site polarity, the intensity ratio is a complex parameter that is also sensitive to the local hydration. We demonstrate that even the deeply located probes sense this hydration effect, which can be modulated by the charge of the lipid heads and is anisotropic with respect to the bilayer plane. Thus the two-band ratiometric fluorescence probes can provide multiparametric information on the properties of lipid membranes at different depths.     

The Crystallography of Interphase Boundaries Between Silicon Carbide and Silicon Nitride in Silicon Nitride—Silicon Carbide Particulate Composites

Interphase boundaries between 3C SiC grains and two different -Si₃N₄ morphologies in Si₃N₄–SiC composites have been studied by transmission electron microscopy. In general, boundaries between small -Si₃N₄ intragranular precipitates and surrounding SiC grains were relatively free of intergranular films, whereas boundaries between large -Si₃N₄ grains and adjacent SiC grains were invariably covered with thin intergranular films. Orientation relationships approximating to [110] 3C SiC [0001] -Si₃N₄ and (001) 3C SiC (10 0) -Si₃N₄ were found to dominate between 3C SiC grains and the intragranular -Si₃N₄ precipitates, but there was no evidence of any favoured orientation relationship between the large -Si₃N₄ grains and adjacent SiC grains. The rationale for special orientation relationships arising when there is no intergranular film present at 3C SiC–-Si₃N₄ interfaces is explored geometrically using the near-coincidence site lattice model, with the significant result that the dominant orientation relationships between 3C SiC grains and the intragranular -Si₃N₄ precipitates have low misfits relative to all other possible orientation relationships between 3C SiC and -Si₃N₄.     

Synthesis,Structure, DFT Calculations,and In Silico Toxic Potential of Ni(II), Zn(II), and Fe(II) Complexes with a Tridentate Schiff Base

Russian Journal of General Chemistry - The Schiff base ligand has been synthesized from 5-bromo-2-hydroxybenzaldehyde and ethyl...     

2-D analysis of Ge implanted SiO2 surfaces by laser-induced breakdown spectroscopy

2-D elemental distribution of Ge in silicon oxide substrates with differing implantation doses of between 3 × 10¹⁶ cm^− 2 and 1.5 × 10¹⁷ cm^− 2 has been investigated by Laser-Induced Breakdown Spectroscopy (LIBS). Spectral emission intensity has been optimized with respect to time, crater size, ablation depth and laser energy. Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM) coupled with Energy-Dispersive X-Ray Spectroscopy (EDX) have been utilized to obtain crater depth, morphology and elemental composition of the sample material, respectively. LIBS spectral data revealed the possibility of performing 2-D distribution analysis of Ge atoms in silicon oxide substrate. EDX analysis results confirmed that LIBS is capable to detect Ge atoms at concentrations lower than 0.2% (atomic). LIBS as a fast semi-quantitative analysis method with 50 µm lateral and 800 nm depth resolution has been evaluated. Results illustrate the potential use of LIBS for rapid, on-line assessment of the quality of advanced technology materials during the manufacturing process.     

Structures and Energetics of NI3 and N2I4

We have applied new methods for performing coupled-cluster calculations to small molecules containing iodine atoms; specifically, NI₃ and N₂I₄. Because NI₃ is known to be very reactive, attempts to measure its thermodynamic properties have been challenging at best. To date, N₂I₄ has not been isolated, and our results suggest that its isolation will be just as challenging. We find that the ΔH_f(NI₃)=+307.7 kJ mol⁻¹ and ΔH_f(N₂I₄)=+551.6 kJ mol⁻¹, confirming that they are unstable with respect to their decomposition products N₂ and I₂.     

On Two-dimensional Predictions of Turbulent Cross-flow Induced Vibration: Forces on a Cylinder and Wake Interaction

In this paper a typical fluid-structure interaction scenario is investigated for a turbulent flow past a circular cylinder at a relatively low subcritical Reynolds number. Numerous experimental and numerical studies have been undertaken for a baseline Reynolds number of 4,000 involving a stationary cylinder to study in detail the near wake mean flow and turbulence characteristics. These studies conclusively show that the turbulent wake displays significant coherent periodic structures of large eddies that could be adequately and profitably resolved by “low order modelling” of turbulence. In this study, an unsteady numerical framework is employed for the simulations, incorporating an Arbitrary Lagrangian–Eulerian (ALE) method for the associated grid deformation to simulate the coupled motion of the circular cylinder with a single degree of freedom in the initial zone in a typical cylinder-flow response map or what is called “initial regime”. Particular attention is paid towards resolving the large scales of the fluid motion and the inherent coupling of the cylinder’s motion towards the associated evolution of the time averaged flow field. The flow-induced vibration effects regarding the kinetic energy exchange between the mean flow and the coherent periodic scales are investigated further. The predictions discussed and analyzed in detail in the paper display reasonable agreement with the chosen benchmark tests of the stationary cylinder and suggest that the conclusions outlined regarding the coupled flow-cylinder system potentially provides a valuable contribution to the state of the art.     

Electrical and ellipsometry study of sputtered SiO2 structures with embedded Ge nanocrystals

SiO₂ layer structures with a middle layer containing Ge nanocrystals were prepared by sputtering on n- and p-type Si substrates, and by consecutive annealing. Ge content in the middle layer was varied in the range of 40-100%. Most of the structures exhibited low breakdown voltages. The current through the structures became Schottky-like after breakdown. However, some p-type samples showed a considerable memory effect. It was obtained by spectroscopic ellipsometry that the middle layer contains amorphous Ge phase as well. The results also suggest intermixing of the layers during the sputtering and/or the annealing process.     

On f-Linearity and f-Orthomorphisms

Let A be an f-algebra with unit and L,M be two f-modules on A. We define f-orthomorphisms from L into M and show that these operators coincide with the f-linear operators whenever M is topologically full with respect to A. We show that f-orthomorphisms enjoy many of the properties of orthomorphisms.