Preparation of dibromopyridines having -(CH2)m-SO3Na groups as monomers for new polypyridines

Dibromopyridines or dibromopyridone with -(CH₂)_m-SO₃Na group(s) has been prepared via the reactions of the corresponding dibromopyridines with -OH and -NH₂ groups with sultone. These compounds were converted into polymers with the -(CH₂)_m-SO₃H groups via organometallic polycondensation. The polymer showed proton conducting properties and high stability toward oxidation.     

Novel Chiral Bisformamide-Promoted Asymmetric Allylation of Benzaldehyde with Allyltrichlorosilane

Novel chiral bisformamides have been prepared from (R,R)-1,2-cyclohexanediamine and utilized as Lewis bases in the asymmetric allylation of benzaldehyde with allyltrichlorosilane. The reaction in the presence of Lewis base 1i gave an 83:17 enantiomeric ratio (R/S) of the products in 90% isolated yield.      

Synthesis of novel nematic liquid crystals containing 3,3'-dimethyl-2,2'-bipyridyl

Liquid-crystalline 3,3′-dimethyl-2,2′-bipyridyl derivatives with long 4-(alkoxyphenyl)ethynyl (-C≡C-C₆H₄-OR) groups in the 5,5′-positions were synthesized by palladium-catalysed crosscoupling reactions. The compounds exhibit exclusively nematic behaviour; for example, the hexyl derivative showed a nematic phase over the temperature range 145.2–205.0°C. On increasing the length of the terminal chain, the transition temperatures were lowered; for example, the hexadecyl derivative was nematic in the range 117.0–126.8°C.     

Control of diameter of ZnO nanorods grown by chemical vapor deposition with laser ablation of ZnO

We made a study of controlling diameters of well-aligned ZnO nanorods grown by low-pressure thermal chemical vapor deposition combined with laser ablation of a sintered ZnO target, which was developed by us. Until now, it has been impossible to control diameters of ZnO nanorods, while the growth orientation was maintained well-aligned. In this study we developed a multi-step growth method to fabricate well-aligned nanorods whose diameters could be controlled. Metal Zn vapor and O₂ are used as precursors to grow ZnO nanorods. N₂ is used as a carrier gas for the precursors. A substrate is an n-Si (111) wafer. A sintered ZnO target is placed near the substrate and ablated by a Nd–YAG pulsed laser during ZnO nanorod growth. The growth temperature is 530 C and the pressure is 66.5 Pa. A vertical growth orientation of ZnO nanorods to the substrate is realized in the first-step growth although the diameter cannot be controlled in this step. When an O₂ flow rate is 1.5 sccm, well-aligned nanorods with 100 nm diameter are grown. Next, the second-step nanorods are grown on only the flat tip of the first-step nanorods. The diameters of the second-step nanorods can be controlled by adjusting the O₂ flow rate, and the growth direction is kept the same as that of the first-step nanorods. When the O₂ flow rate in second-step growth is smaller than 0.6 sccm, the diameter of the second-step nanorods is 30–50 nm. When the O₂ flow rate is between 0.75 and 3.0 sccm, the diameter is almost same as that of the first-step nanorods. When the O₂ flow rate is larger than 4.5 sccm, the diameter is increased with increasing O₂ flow rate. Further, the third-step ZnO nanorods with gradually increased diameters can be grown on the second-step nanorods with 1.5 sccm O₂ flow rate and without laser ablation.     

One-dimensional migration of interstitial clusters in SUS316L and its model alloys at elevated temperatures

For self-interstitial atom (SIA) clusters in various concentrated alloys, one-dimensional (1D) migration is induced by electron irradiation around 300 K. But at elevated temperatures, the 1D migration frequency decreases to less than one-tenth of that around 300 K in iron-based bcc alloys. In this study, we examined mechanisms of 1D migration at elevated temperatures using in situ observation of SUS316L and its model alloys with high-voltage electron microscopy. First, for elevated temperatures, we examined the effects of annealing and short-term electron irradiation of SIA clusters on their subsequent 1D migration. In annealed SUS316L, 1D migration was suppressed and then recovered by prolonged irradiation at 300 K. In high-purity model alloy Fe-18Cr-13Ni, annealing or irradiation had no effect. Addition of carbon or oxygen to the model alloy suppressed 1D migration after annealing. Manganese and silicon did not suppress 1D migration after annealing but after short-term electron irradiation. The suppression was attributable to the pinning of SIA clusters by segregated solute elements, and the recovery was to the dissolution of the segregation by interatomic mixing under electron irradiation. Next, we examined 1D migration of SIA clusters in SUS316L under continuous electron irradiation at elevated temperatures. The 1D migration frequency at 673 K was proportional to the irradiation intensity. It was as high as half of that at 300 K. We proposed that 1D migration is controlled by the competition of two effects: induction of 1D migration by interatomic mixing and suppression by solute segregation.     

Label‐Free Imaging of Intracellular Temperature by Using the O−H Stretching Raman Band of Water

We propose a label‐free method for measuring intracellular temperature using a Raman image of a cell in the O?H stretching band. Raman spectra of cultured cells and the medium were first measured at various temperatures using a Raman microscope and the intensity ratio of the two regions of the O?H stretching band was calculated. The intensity ratio varies linearly with temperature in both the medium and cells, and the resulting calibration lines allow simultaneous visualization of both intracellular and extracellular temperatures in a label‐free manner. We applied this method to the measurement of temperature changes after the introduction of FCCP (carbonyl cyanide‐p‐trifluoromethoxyphenylhydrazone) in living cells. We observed a temperature rise in the cytoplasm and succeeded in obtaining an image of the change in intracellular temperature after the FCCP treatment.