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81.
We report measurements of branching fractions for B --> K pi and B --> pi pi decays based on a data sample of 449 x 10(6) BB[over] pairs collected at the Upsilon(4S) resonance with the Belle detector at the KEKB asymmetric-energy e(+)e(-) collider. We also measure the ratios of partial widths for B-->Kpi decays, namely R(c) identical with 2Gamma(B(+) --> K(+) pi(0))/Gamma(B(+) --> K(0) pi(+)) = 1.08+/-0.06+/-0.08 and R(n) identical with Gamma(B(0) --> K(+) pi(-))/2 Gamma(B(0) --> K(0) pi(0)) = 1.08+/-0.08+/-0.08, where the first and the second errors are statistical and systematic, respectively. These ratios are sensitive to enhanced electroweak penguin contributions from new physics; the new measurements are, however, consistent with standard model expectations.  相似文献   
82.
Semiconductor TiO2 particles loaded with WO3 (WO3/TiO2), synthesized by impregnation of tungstic acid followed by calcination, were used for photocatalytic oxidation of alcohols in water with molecular oxygen under irradiation at λ>350 nm. The WO3/TiO2 catalysts promote selective oxidation of alcohols to aldehydes and show higher catalytic activity than pure TiO2. In particular, a catalyst loading 7.6 wt % WO3 led to higher aldehyde selectivity than previously reported photocatalytic systems. The high aldehyde selectivity arises because subsequent photocatalytic decomposition of the formed aldehyde is suppressed on the catalyst. The TiO2 surface of the catalyst, which is active for oxidation, is partially coated by the WO3 layer, which leads to a decrease in the amount of formed aldehyde adsorbed on the TiO2 surface. This suppresses subsequent decomposition of the aldehyde on the TiO2 surface and results in high aldehyde selectivity. The WO3/TiO2 catalyst can selectively oxidize various aromatic alcohols and is reusable without loss of catalytic activity or selectivity.  相似文献   
83.
An essential bounded function ? gives a continuous linear functional on the Hardy space H1 on the bitorus. In this paper, we consider extremal problems on H1 when ? is a rational function, ? is a product of one variable functions or ? = |f|/f for some outer function f in H1 such that f(z, w) has a good property with respect to w for a.e. z. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)  相似文献   
84.
The Kirkwood and Buff compressibility equation for multicomponent systems is applied to an assembly of ions and electrons, where the Coulomb potential is replaced by the Yukawa potential. It is then shown that the resulting formula gives the Watabe-Hasegawa-Chihara compressibility equation in the limit of infinitesimal damping constant of the Yukawa potential.  相似文献   
85.
We present improved measurements of CP-violation parameters in B(0) --> phiK(0), eta(')K(0), KS(0)KS(0)KS(0) decays based on a sample of 535 x 10(6) BB pairs collected at the Upsilon(4S) resonance with the Belle detector at the KEKB energy-asymmetric e(+)e(-) collider. We obtain sin2phi1(eff)=+0.64+/-0.10(stat)+/-0.04(syst) for B(0) --> eta(')K(0), +0.50+/-0.21(stat)+/-0.06(syst) for B(0) --> phiK(0), and +0.30+/-0.32(stat)+/-0.08(syst) for B(0) --> KS(0)KS(0)KS(0) decays. We have observed CP violation in the B(0) --> eta(')K(0) decay with a significance of 5.6 standard deviations. We also perform an improved measurement of CP asymmetries in B(0) --> J/psiK(0) decays and obtain sin2phi1=+0.642+/-0.031(stat)+/-0.017(syst).  相似文献   
86.
We report a determination of the B(0)(d)-&B_(0)(d) mixing parameter Deltam(d) based on the time evolution of dilepton yields in Upsilon(4S) decays. The measurement is based on a 5.9 fb(-1) data sample collected by the Belle detector at KEKB. The proper-time difference distributions for same-sign and opposite-sign dilepton events are simultaneously fitted to an expression containing Deltam(d) as a free parameter. Using both muons and electrons, we obtain Deltam(d) = 0.463+/-0.008 (stat)+/-0.016 (syst) ps(-1). This is the first determination of Deltam(d) from time evolution measurements at the Upsilon(4S). We also place limits on possible CPT violations.  相似文献   
87.
We have found that the photoluminescence (PL) intensity of CdSe/ZnS nanocrystals placed on a thin film of insulator (GaAsOx/GaAs) depends on excitation wavelength through the interference effects of the excitation light. By employing the multi-reflection/interference calculation, the insulator thickness of the underlying non-uniform patterns can be evaluated by the simple observation of CdSe/ZnS PL with a couple of excitation wavelengths. Moreover, the differences observed for the temporal evolution of CdSe/ZnS PL (blue shifts and degradation) among the excitation wavelengths suggest that the photo-induced changes of chemical composition and surface ligands are responsible for blue shifts and degradation, respectively.  相似文献   
88.
Unlike conventional electrospun polymer fibers deposited on a target electrode as a randomly oriented mesh, poly(p‐xylenetetrahydrothiophenium chloride) was electrospun into centimeters‐long yarns vertically on the surface of the electrode but parallel to the electric field. The diameter of the yarn was strongly affected by the concentration, spinning rate, and viscosity of the polymer solution, but less dependent on the applied voltage. The subsequent carbonization of thus‐electrospun yarns at 600–1000 °C resulted in uniaxially aligned carbon nanofibers with average diameters of 127–184 nm. On the basis of Raman spectra, the graphitic crystallite size and the molar fraction of graphite were estimated to be 1.2–1.4 and 0.21–0.24 nm, respectively. © 2007 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 46: 305–310, 2008  相似文献   
89.
We observed the surface morphology of vicinal GaAs(001) after thermal treatment in AsH3/H2 atmosphere by atomic force microscopy (AFM). Clear multiatomic steps were formed under the high temperature thermal treatment. Next, we investigated the mechanism of step bunching during thermal treatment by two experiments from the view point of Ga atom evaporation. One is the selective thermal treatment using a partially masked GaAs wafer, and the evaporation amount of Ga atoms was estimated by AFM. The other is the investigation of photoluminescence (PL) peak energy shifts for AlGaAs/GaAs single quantum wells with a thermal treatment process at the top of the GaAs quantum well layer, compared to those without thermal treatment. These results indicate that the evaporation hardly occurs during the thermal treatment process. Therefore, step bunching phenomena on GaAs(001) vicinal surfaces during thermal treatment are probably caused by migration of the atoms detached from upside steps and their re-incorporation to downside steps.  相似文献   
90.
The development of molecular spectroscopy has enabled us to select chlorinated aromatic hydrocarbons very rapidly. In particular, the laser ionization TOFMS (time-of-flight mass spectrometry) method is expected to be useful as an on-line, selective, and sensitive method. In the present work, real-time laser ionization TOFMS measurements were carried out on gaseous chlorinated aromatic hydrocarbons. The laser ionization method used resonance-enhanced two-photon ionization with the direct introduction of gas into the vacuum chamber. This method for analyzing aromatic hydrocarbons was developed using a pulsed supersonic molecular beam method. In the context of developing a highly selective and sensitive method, excitation of monochlorinated benzene at lambda = 263.07 nm was found to be effective in the wavelength region from 263 nm to 265 nm. Also the excitation of polychlorinated biphenyls at lambda = 266 nm was found to be substantially more effective than at lambda = 280, 300 or 320 nm. The achievable sensitivity for real-time (1 min) measurements using the laser ionization TOFMS technique was found to be in the ppbV range.  相似文献   
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